Author details
Author's Published Works
Author details
Showing 1-13 of 13 results
- Sort
Sort By
Results
All-optical waveguide-type gain switch utilizing intersubband transition
All-optical switching performance of waveguide-type device utilizing intersubband transition is investigated by analyzing the position-dependent change of optical power densities and carrier densities in the waveguide. In the device, the three lowest energy-level subbands in the conduction band structure of asymmetric coupled quantum wells are used. The optical excitation pulse excites the electro...Show More
Optical and structural properties of In/sub 0.53/Ga/sub 0.47/As/In/sub 0.52/Al/sub 0.48/As multiple quantum wells grown on vicinal (110) InP substrates by molecular beam epitaxy
Seventh International Conference on Indium Phosphide and Related Materials
Year: 1995 | Conference Paper |
We investigated the MBE growth and optical characteristics of In/sub 0.53/Ga/sub 0.47/As/In/sub 0.52/Al/sub 0.48/As MQWs on vicinal (110) InP substrates. The MQWs grown on the (110) substrates tilted towards [001~] indicate narrower excitonic linewidth in absorption spectra and stronger photoluminescence intensity than those of (001) MQWs. On the other hand, for the MQWs on the (110) tilted toward...Show More
A low-drive-voltage, high-speed monolithic multiple-quantum-well modulator/DFB laser light source
IEEE Photonics Technology Letters
Cited by: Papers (24)
A high-speed InGaAs/InAlAs multiple-quantum-well (MQW) intensity modulator and an InGaAsP/InGaAs MQW distributed feedback laser were monolithically integrated by using a hybrid growth technique combining molecular beam epitaxy and metalorganic vapor phase epitaxy. An operating drive voltage of only 2.0 V, a 20-dB on/off ratio, and a 3-dB bandwidth greater than 15 GHz were obtained. This device ope...Show More
In/sub 1-x/Ga/sub x/As/AlAs/sub 1-y/Sb/sub y/ multiple quantum wells (MQWs) lattice-matched toShow More
High-speed and low-drive-voltage monolithic multiple quantum-well modulator/DFB laser light source
IEEE Photonics Technology Letters
Cited by: Papers (27)
Monolithic integration of an InGaAsP/InGaAs multiple quantum well (MQW) distributed-feedback (DFB) laser with a high-speed InGaAs/InAlAs MQW intensity modulator is demonstrated. A 3-dB bandwidth. in excess of 16 GHz and low-drive-voltage operation (4.0 V) for a 20-dB on-off ratio are obtained. Good coupling efficiency between an MQW DFB laser and an MQW modulator is accomplished using hybrid cryst...Show More
High-speed InGaAlAs/InAlAs multiple quantum well electrooptic phase modulators with bandwidth in excess of 20 GHz
High-speed phase modulation (in the frequency bandwidth of 20 GHz, the highest yet reported for multiple quantum well (MQW) phase modulators) for waveguided InGaAlAs/InAlAs MQW optical modulators is reported. The modulator successfully operates at a long wavelength of 1-55 mu m with a low required voltage for phase shift (V pi =3.8 V), small intensity modulation depth below 1.5 dB, and without any...Show More
InGaAs-InAlAs multiple quantum well optical bistable devices using the resonant tunneling effect
New types of InGaAs-InAlAs multiple quantum well (MQW) optical bistable devices using the resonant tunneling effect are investigated. The bistability of these devices is obtained by the negative differential resistance (NDR) of the MQW resonant tunneling diodes (RTDs). Two types of MQW bistable devices are described. One is an MQW optical bistable device consisting of an MQW-RTD and an MQW modulat...Show More
An InGaAs/InAlAs superlattice avalanche photodiode with a gain bandwidth product of 90 GHz
The authors describe the fabrication of an InGaAs/InAlAs superlattice avalanche photodiode with a gain-bandwidth product of 90 GHz. The device is composed of an InGaAs/InAlAs superlattice multiplication region and an InGaAs photoabsorption layer. The effect of the superlattice multiplication region thickness on the gain-bandwidth product was studied. A gain-bandwidth product of 90 GHz was obtained...Show More
Observation of low-chirp modulation in InGaAs-InAlAs multiple-quantum-well optical modulators under 30 GHz
IEEE Photonics Technology Letters
Cited by: Papers (31)
Modulated light spectra were measured in long-wavelength InGaAs-InAlAs multiple-quantum-well intensity modulators under 30-GHz large-signal modulations. The linewidth broadening factor alpha is determined from the relation between the intensity modulation index and the sideband strength relative to the carrier. The minimum alpha value is estimated to be 0.70 at 1.54 mu m, which is almost the same ...Show More
High-speed InGaAlAs/InAlAs multiple quantum well optical modulators
K. Wakita;I. Kotaka;O. Mitomi;H. Asai;Y. Kawamura;M. Naganuma
High-speed modulation over 22 GHz for waveguided InGaAlAs/InAlAs multiple quantum well (MQW) optical modulators is described. A large on/off ratio of over 25 dB is demonstrated with a low-drive voltage (6 V) operating in the 1.55- mu m wavelength region. The design and characteristics of MQW p-i-n modulators are discussed. The causes of large-insertion loss and the required drive voltage bandwidth...Show More
InGaAs/InAlAs SCH-MQW lasers with superlattice optical confinement layers grown by MBE
InGaAs/InAlAs separate-confinement-heterostructure multiple-quantum-well (SCH-MQW) lasers with superlattice optical confinement layers grown by molecular beam epitaxy are discussed. Room-temperature operation with a low threshold current density of 1.7 kA/cm/sup 2/ at 1.537 mu m wavelength is obtained for these lasers.<>Show More
A low-noise and wide-bandwidth InGaAs/InAlAs superlattice APD
International Technical Digest on Electron Devices Meeting
Year: 1989 | Conference Paper |
Cited by: Papers (1)
An InGaAs-InAlAs superlattice avalanche photodiode (APD) was fabricated by MBE (molecular beam epitaxy), and impact ionization rates, excess multiplication noise, and high-frequency response were measured. The electron ionization rate ( alpha ) is enhanced by the large conduction band offset. The ratio of alpha / beta is as large as 29 at an electric field of 2.2*10/sup 5/ V/cm, where beta is the ...Show More
High-speed InGaAlAs/InAlAs multiple quantum well optical modulators with bandwidths in excess of 20 GHz at 1.55 mu m
The modulator has a large on/off ratio, a low driving voltage (4 V), and operates in the 1.55- mu m wavelength region. Small device capacitance (0.2 pF) has been obtained by using spin-coated polyimides under the bonding pads, and small stray capacitance (0.07 pF) and bonding wide inductance (0.3 nH) have been realized. The modulator requires the lowest power yet reported for a high-frequency-oper...
Show More
First Page of the Article
Show MoreIEEE Account
Purchase Details
Profile Information
Need Help?
- US & Canada: +1 800 678 4333
- Worldwide: +1 732 981 0060
- Contact & Support
- About IEEE Xplore
- Contact Us
- Help
- Accessibility
- Terms of Use
- Nondiscrimination Policy
- Sitemap
- Privacy & Opting Out of Cookies
A not-for-profit organization, IEEE is the world's largest technical professional organization dedicated to advancing technology for the benefit of humanity.
© Copyright 2025 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.