Abstract:
The modulator has a large on/off ratio, a low driving voltage (4 V), and operates in the 1.55- mu m wavelength region. Small device capacitance (0.2 pF) has been obtained...Show MoreMetadata
First Page of the Article
Abstract:
The modulator has a large on/off ratio, a low driving voltage (4 V), and operates in the 1.55- mu m wavelength region. Small device capacitance (0.2 pF) has been obtained by using spin-coated polyimides under the bonding pads, and small stray capacitance (0.07 pF) and bonding wide inductance (0.3 nH) have been realized. The modulator requires the lowest power yet reported for a high-frequency-operation external modulator.<>
Published in: IEEE Photonics Technology Letters ( Volume: 1, Issue: 5, May 1989)
DOI: 10.1109/68.34753
First Page of the Article
Citations are not available for this document.
Cites in Patents (5)Patent Links Provided by 1790 Analytics
1.
Yamada, Koji, "SEMICONDUCTOR OPTICAL FUNCTION DEVICE"
Inventors:
Yamada, Koji
Abstract:
A semiconductor optical function device has a first junction structure part which includes a first conductivity type cladding layer, a light waveguide layer and a second conductivity type cladding layer, and a second junction structure part which includes the first conductivity type cladding layer and the second conductivity type sub-cladding layer, and is formed at a position separated from the first junction structure part, on a substrate. Here, a first electrode is provided on the top of the first junction structure part, and a second electrode is provided on the top of the second junction structure part, and the height from the top surface of the substrate to the top surface of the first electrode, and the height from the top surface of the substrate to the top surface of the second electrode are substantially the same.
Assignee:
OKI ELECTRIC INDUSTRY CO LTD
Filing Date:
25 June 2001
Grant Date:
29 July 2003
Patent Classes:
Current U.S. Class:
385002000, 257079000, 257183000, 257458000, 257613000, 385001000, 385003000, 385129000, 385131000, 385132000
Current International Class:
G02F0010350000
2.
Yamada, Koji, "SEMICONDUCTOR OPTICAL FUNCTIONAL ELEMENT"
Inventors:
Yamada, Koji
Abstract:
A semiconductor optical functional element driven with broad range of withstand voltage even if put in forward bias is provided a double heterojunction structure comprising a first conductivity-type cladding layer, an optical waveguide layer, and a second conductivity-type cladding layer on an underlying layer. The semiconductor optical functional element is further provided a first conductivity-type subcladding layer, forming a homojunction with the surface of this second conductivity-type cladding layer opposite from the optical waveguide layer. Consequently, this semiconductor optical functional element provides a PIN junction structure. Or, the semiconductor optical functional element is provided, on a lower cladding layer, a first stacked body and second stacked body, buried in an insulating layer. Such a first stacked body is formed of a light absorption layer and upper cladding layer stacked in that order on the lower cladding layer, forming a P-i-N heterojunction. Meanwhile, the second stacked body is formed of an intermediate semiconductor layer and upper cladding layer stacked in that order on the lower cladding layer, forming a P-i-N heterojunction. Consequently, this optical functional element is provided a P-i-N-i-P junction structure.
Assignee:
OKI ELECTRIC INDUSTRY CO LTD
Filing Date:
30 October 1998
Grant Date:
06 March 2001
Patent Classes:
Current U.S. Class:
385002000, 257458000, 385001000, 385131000
Current International Class:
G02F0010250000
3.
Injeyan, Hagop; Holcomb, Terry L., "Ultracompact Q-switched microlasers"
Inventors:
Injeyan, Hagop; Holcomb, Terry L.
Abstract:
No Abstract
Assignee:
TRW INC
Filing Date:
15 September 1995
Grant Date:
10 April 1996
Patent Classes:
Current International Class:
G02F0010150000, G02F0013700000, G02F0013900000, H01S0030600000, H01S0031100000, H01S0032300000, H01S0050000000
4.
Injeyan, Hagop; Holcomb, Terry L., "ULTRACOMPACT Q SWITCHED MICROLASERS AND RELATED METHOD"
Inventors:
Injeyan, Hagop; Holcomb, Terry L.
Abstract:
An ultracompact array of microlasers in which Q?switching is performed by intracavity electroabsorptive modulators, to provide an array of relatively high?power beams with good beam quality and other beam characteristics. The microlasers are optically pumped by light beams from an array of semiconductor diode lasers, each of which is individually controlled by a separate electrode. Light from the diode lasers is coupled directly into a slab of solid?state crystal material, such as Nd:YVO.sub.4 (neodymium:yttrium vanadate), in which laser action takes place. The solid state material in part defines an array of laser cavities and an array of individually controllable Q?switching elements is integrated into the cavities, permitting Q?switching of each of the array elements. The Q?switching elements are electroabsorptive modulators that permit extremely rapid switching of the microlaser elements and provide output pulses of relatively high peak powers.
Assignee:
TRW INC
Filing Date:
06 October 1994
Grant Date:
30 January 1996
Patent Classes:
Current U.S. Class:
372012000, 372011000, 372017000
Current International Class:
H01S0031150000
5.
Ajisawa, Akira; Terakado, Tomoji; Yamaguchi, Masayuki; Komatsu, Keiro, "Optical semiconductor device"
Inventors:
Ajisawa, Akira; Terakado, Tomoji; Yamaguchi, Masayuki; Komatsu, Keiro
Abstract:
An optical semiconductor device comprises a stripe-mesa structure provided on a semi-insulating substrate. The stripe-mesa structure comprises an undoped light absorption layer sandwiched by cladding layers, and burying layers on the both sides. For this structure, a device capacitance is decreased to provide wide bandwidth and ultra-high speed operation properties. This device is applied to an optical modulator, an integrated type optical modulator, and an optical detector.
Assignee:
NEC CORP
Filing Date:
27 December 1990
Grant Date:
24 July 1991
Patent Classes:
Current International Class:
G02F0010250000, H01L0310224000, H01L0311050000
