Abstract:
InGaAs/InAlAs separate-confinement-heterostructure multiple-quantum-well (SCH-MQW) lasers with superlattice optical confinement layers grown by molecular beam epitaxy are...Show MoreMetadata
Abstract:
InGaAs/InAlAs separate-confinement-heterostructure multiple-quantum-well (SCH-MQW) lasers with superlattice optical confinement layers grown by molecular beam epitaxy are discussed. Room-temperature operation with a low threshold current density of 1.7 kA/cm/sup 2/ at 1.537 mu m wavelength is obtained for these lasers.<>
Published in: IEEE Photonics Technology Letters ( Volume: 2, Issue: 1, January 1990)
DOI: 10.1109/68.47022
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Cites in Papers - IEEE (3)
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1.
M. Irikawa, H. Shimizu, I. Fukushima, K. Nishikata, Y. Hirayama, "Strained GaInAs-AlGaInAs 1.5-/spl mu/m-wavelength multiquantum-well lasers loaded with GaInAs-AlInAs multiquantum barriers at the p-side optical confinement layer", IEEE Journal of Selected Topics in Quantum Electronics, vol.1, no.2, pp.285-292, 1995.
2.
H. Iwamura, H. Uenohara, A. Wakatsuki, Y. Kawamura, "High performance InGaAs/InAlAs MQW laser diodes grown by gas source molecular beam epitaxy", LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels, pp.469-472, 1992.
3.
Y. Kawamura, A. Wakatsuki, Y. Noguchi, H. Iwamura, "InGaAs/InGaAlAs MQW lasers with InGaAsP guiding layers grown by gas source molecular beam epitaxy", IEEE Photonics Technology Letters, vol.3, no.11, pp.960-962, 1991.
Cites in Papers - Other Publishers (3)
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Yoshikatsu Ichimura, Katsumi Kishino, Masaru Haraguchi, Atsushi Yoshida, "Effect of superlattice buffer on improved emission efficiency of quantum wells for MgZnSSe-based blue/green lasers", Journal of Crystal Growth, vol.159, no.1-4, pp.586, 1996.
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