Abstract:
The authors describe the fabrication of an InGaAs/InAlAs superlattice avalanche photodiode with a gain-bandwidth product of 90 GHz. The device is composed of an InGaAs/In...Show MoreMetadata
Abstract:
The authors describe the fabrication of an InGaAs/InAlAs superlattice avalanche photodiode with a gain-bandwidth product of 90 GHz. The device is composed of an InGaAs/InAlAs superlattice multiplication region and an InGaAs photoabsorption layer. The effect of the superlattice multiplication region thickness on the gain-bandwidth product was studied. A gain-bandwidth product of 90 GHz was obtained for the device with a multiplication region thickness of 0.52 mu m. Low noise performance is compatible with the high gain-bandwidth product due to improvement of the ionization rate ratio made by introducing a superlattice structure into the multiplication region.<>
Published in: IEEE Photonics Technology Letters ( Volume: 3, Issue: 9, September 1991)
DOI: 10.1109/68.84503
Citations are not available for this document.
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Cites in Papers - IEEE (6)
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