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Chen Chen - IEEE Xplore Author Profile

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Author details

Chen Chen

Publications

57

Citations

584

Publications by Year

20182025

Co-Authors:

Ronald M. AartsSaadullah Farooq AbbasiTuheti AdiliJawad AhmadMetin Akay

Show All Co-Authors (127)

Chen Chen

Affiliation

CIME

Fudan University

Shanghai, China

Publication Topics

Convolutional Neural Network,
EEG Signals,
Sleep Stages,
Neural Network,
EEG Channels,
Multi-scale Convolutional Neural Network,
Recurrent Neural Network,
Sleep Problems,
Children’s Hospital,
Electrooculogram Signals,
Polysomnography,
Eye Movements

Biography

Chen Chen received the M.S. degree in embedded system from the Institut Supérieur d’Electronique de Paris (ISEP), in 2013, and the Ph.D. degree in computer science from Université Pierre et Marie Curie (UPMC), in 2016. She is currently a Postdoctoral Researcher with the Centre of Intelligent Medical Electronics, School of Information Science and Technology, Fudan University. Her research interests include biomedical engineering, focusing on electroencephalography monitoring, biomedical signal processing, sleep analysis, wearable sensor systems, and personalized health monitoring.(Based on document published on 1 October 2020).

Publications

57

Citations

584

Publications by Year

20182025

Co-Authors:

Ronald M. Aarts
Saadullah Farooq Abbasi
Tuheti Adili
Jawad Ahmad
Metin Akay

Show All Co-Authors (127)

Author's Published Works

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Showing 1-25 of 2,439 resultsfor "Index Terms":Emissive Layer

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Effect of Hole Transport Layer and Electron Transport Layer on the performance of a single emissive layer Organic Light Emitting Diode

Arief Udhiarto;Yefa Sister;Sandia Rini;Muhammad Asvial;Badrul Munir

2015 International Conference on Quality in Research (QiR)

Year: 2015 | Conference Paper |

Cited by: Papers (3)

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In this paper we study the effect of Hole Transport Layer NPB (N,N'-diphenyl-N,N'-bis(1-naphtyl)-1,1'-biphenyl-4,4"-diamine) and Electron Transport Layer on the performance of a single layer of Blue Organic Light Emitting Diode. Three different structures are analyzed and are compared to the reference structure. SimOLED is used to simulate and to analyze both electrical and optical characteristics...Show More

Effect of Hole Transport Layer and Electron Transport Layer on the performance of a single emissive layer Organic Light Emitting Diode

Arief Udhiarto;Yefa Sister;Sandia Rini;Muhammad Asvial;Badrul Munir

2015 International Conference on Quality in Research (QiR)

Year: 2015 | Conference Paper |

Highly Efficient Trilayered White Quantum Dot Light Emitting Diodes Based on Organic Buffer Layers

Chun Chang;Qin Zhang;Weifeng Zhao;Feng Li;Yan Huang;Longxiang Li;Huaibin Shen;Qinghua Li

IEEE Electron Device Letters

Year: 2018 | Volume: 39, Issue: 11 | Journal Article |

Cited by: Papers (8)

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We demonstrate highly efficient white quantum dot light emitting diode (QLED) devices using three separate quantum dots emission layers. The three luminescent layers are separated by two poly(p-phenylene benzobisoxazole) precursor buffer layers. These organic buffer layers have high lowest unoccupied molecular orbital levels, which contributes to the blocking of extra electrons and the balance of ...Show More

Highly Efficient Trilayered White Quantum Dot Light Emitting Diodes Based on Organic Buffer Layers

Chun Chang;Qin Zhang;Weifeng Zhao;Feng Li;Yan Huang;Longxiang Li;Huaibin Shen;Qinghua Li

IEEE Electron Device Letters

Year: 2018 | Volume: 39, Issue: 11 | Journal Article |

Highly Efficient White Light-Emitting Diodes Based on Quantum Dots and Polymer Interface

Byoung-Ho Kang;Tae-Yang You;Se-Hyuk Yeom;Kyu-Jin Kim;Su-Hwan Kim;Sang-Won Lee;Heng Yuan;Dae-Hyuk Kwon;Shin-Won Kang

IEEE Photonics Technology Letters

Year: 2012 | Volume: 24, Issue: 18 | Journal Article |

Cited by: Papers (21) | Patents (2)

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We proposed a novel white-light-emitting diode (LED) using the hybridization of quantum dots (QDs) blended with poly(9, 9-dioctylfluorenyl-2, 7-diyl) (PFO) as the white emissive layer and poly(N-vinylcarbazole) (PVK) blended with poly(N, N' -bis (4-butylphenyl)-N, N'-bis(phenyl) benzidine (poly-TPD) as the hole transport layer (HTL). The red- and green-colored QDs with CdSe and ZnS core and shell ...Show More

Highly Efficient White Light-Emitting Diodes Based on Quantum Dots and Polymer Interface

Byoung-Ho Kang;Tae-Yang You;Se-Hyuk Yeom;Kyu-Jin Kim;Su-Hwan Kim;Sang-Won Lee;Heng Yuan;Dae-Hyuk Kwon;Shin-Won Kang

IEEE Photonics Technology Letters

Year: 2012 | Volume: 24, Issue: 18 | Journal Article |

Numerical Analysis of ZnTe Based Solar Cell with Sb2Te3 Back Surface Field Layer Using SCAPS-1D

Sadia Binte Sohid;Amal Kabalan

2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC)

Year: 2018 | Conference Paper |

Cited by: Papers (3)

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This paper presents the optimization of a ZnTe based solar cell with the following structure: SnO2/n-ZnO/n-CdS/p-ZnTe/Sb2Te3/BC (Cu) where Sb2Te3 has been inserted as a back surface field layer to reduce the minority carrier recombination at the back contact. An efficiency of 18.33% (Voc = 0.47V, Jsc = 57.75 mA/cm2, FF = 67%) has been achieved using the SCAPS-1D simulator with thin absorber layer(...Show More

Numerical Analysis of ZnTe Based Solar Cell with Sb2Te3 Back Surface Field Layer Using SCAPS-1D

Sadia Binte Sohid;Amal Kabalan

2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC)

Year: 2018 | Conference Paper |

Statistical modeling and reliability prediction for transient luminance degradation of flexible OLEDs

Heejin Kim;Hayeon Shin;Jiyoung Park;Youngtae Choi;Jongwoo Park

2018 IEEE International Reliability Physics Symposium (IRPS)

Year: 2018 | Conference Paper |

Cited by: Papers (13)

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An important technical challenge associated with using OLEDs is to develop an appropriate statistical modeling and reliability assessment for precise lifetime prediction. We, herein, propose a modified stretched exponential decay (MSED) model for luminescence decay with respect to intrinsic emissive layer, which is dependent initial luminescence behaviors and subsequent degradation in the constant...Show More

Statistical modeling and reliability prediction for transient luminance degradation of flexible OLEDs

Heejin Kim;Hayeon Shin;Jiyoung Park;Youngtae Choi;Jongwoo Park

2018 IEEE International Reliability Physics Symposium (IRPS)

Year: 2018 | Conference Paper |

Analysis of Performance Parameters and Gate Line Spacing Variation of Vertical Organic Light-Emitting Transistors

Srishti Srishti;Chandni Tiwari;Varun Mishra

2023 International Conference on Device Intelligence, Computing and Communication Technologies, (DICCT)

Year: 2023 | Conference Paper |

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Over the last few years, Organic Semiconductor (OSC) materials based electrical (OTFTs, OSITs) and optical (OLEDs) devices have received great attention. It is because of their capability to be used in large-area, low cost and flexible devices. Vertical organic light emitting transistor (VOLET), a blend of OLED and OSIT can be used to obtain fully organic efficient flexible display devices. VOLETs...Show More

Analysis of Performance Parameters and Gate Line Spacing Variation of Vertical Organic Light-Emitting Transistors

Srishti Srishti;Chandni Tiwari;Varun Mishra

2023 International Conference on Device Intelligence, Computing and Communication Technologies, (DICCT)

Year: 2023 | Conference Paper |

Enhancing Performances of Blue Organic Light-Emitting Devices Incorporating CuPc as Electron Buffer Layers

Zhi Qiang Jiao;Xiao Ming Wu;Yu Lin Hua;Juan Juan Bai;Wen Tao Bi;Xue Mu;Shou Gen Yin

IEEE Electron Device Letters

Year: 2012 | Volume: 33, Issue: 3 | Journal Article |

Cited by: Papers (3)

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The performances of blue organic light-emitting device based on N-BDAVBi are enhanced by inserting a CuPc electron buffer layer, which improves the injection of electrons. By adjusting the thicknesses of the CuPc electron buffer layer and the MoO3 hole buffer layer, the maximum luminescence, the current efficiency, and the power efficiency of above devices have been approximately enhanced by 113%,...Show More

Enhancing Performances of Blue Organic Light-Emitting Devices Incorporating CuPc as Electron Buffer Layers

Zhi Qiang Jiao;Xiao Ming Wu;Yu Lin Hua;Juan Juan Bai;Wen Tao Bi;Xue Mu;Shou Gen Yin

IEEE Electron Device Letters

Year: 2012 | Volume: 33, Issue: 3 | Journal Article |

Fast cell level characterization and reliability evaluation for advanced flexible mobile display

Heejin Kim;Jongwon Lee;Juhyun Bang;Boram Lee;Youngsun Hwang;Jongwoo Park;Kyungwon Lee;Dongsoo Shin

2017 IEEE International Reliability Physics Symposium (IRPS)

Year: 2017 | Conference Paper |

Cited by: Papers (5)

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For an advanced flexible mobile display, the elucidation of the charge transfer mechanism of an emissive layer (EL) in an organic light-emitting diode (OLED) is crucial to ensure performance and reliability. To determine the long-term lifetime characteristics, two different ELs were exposed to an accelerated stress test on the cell level and then characterized by luminance-current-voltage (L-I-V),...Show More

Fast cell level characterization and reliability evaluation for advanced flexible mobile display

Heejin Kim;Jongwon Lee;Juhyun Bang;Boram Lee;Youngsun Hwang;Jongwoo Park;Kyungwon Lee;Dongsoo Shin

2017 IEEE International Reliability Physics Symposium (IRPS)

Year: 2017 | Conference Paper |

Investigation of Different Layer OLED Structure based upon PEDOT:PSS/GO Composite Anode

Aditya Tiwari;Brijesh Kumar

2020 International Conference on Electrical and Electronics Engineering (ICE3)

Year: 2020 | Conference Paper |

Cited by: Papers (3)

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The superiority of intermediate layers in organic light emitting diode (OLEDs) is an essential factor for power efficiency, operating voltage and stability of the device. In this work, the comparison among 2 layer, 3 layer, 4 layer and 5 layer structure OLED on poly(3,4-ethylenedioxythiophene) polystyrene sulfonate/graphene oxide (PEDOT:PSS/GO) composite anode is discussed in depth. Better perform...Show More

Investigation of Different Layer OLED Structure based upon PEDOT:PSS/GO Composite Anode

Aditya Tiwari;Brijesh Kumar

2020 International Conference on Electrical and Electronics Engineering (ICE3)

Year: 2020 | Conference Paper |

Tunneling effect on enhanced OLED performance using Al2O3 buffer layer

L. Zhou;W. M. Su;Z. Cui

The 8th Annual IEEE International Conference on Nano/Micro Engineered and Molecular Systems

Year: 2013 | Conference Paper |

Cited by: Papers (1)

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It has been found that introduction of buffer layers between organic holes transport layer and anode layer plays an important role in improving device stability and hole injection efficiency of organic light-emitting diodes (OLED). As for the mechanism of the improvement due to the buffer layer, it is still controversial. To understand the mechanism behind the enhanced performance of OLED by the b...Show More

Tunneling effect on enhanced OLED performance using Al2O3 buffer layer

L. Zhou;W. M. Su;Z. Cui

The 8th Annual IEEE International Conference on Nano/Micro Engineered and Molecular Systems

Year: 2013 | Conference Paper |

Impact of high voltage on the performance of high-contrast-ratio organic light emitting devices

Bao-Fu Ding;Kamal Alameh

2014 Conference on Optoelectronic and Microelectronic Materials & Devices

Year: 2014 | Conference Paper |

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The role of ultra-thin buffer layer of C60 in recently developed high contrast-ratio tandem organic light emitting devices (HCT-OLEDs) is experimentally investigated. The strong photon emission of Al/C60/ N, N'-di(naphthalene-1-yl)- N, N'- diphenylbenzidine/tris8-hydroxyquinoline-aluminum/LiF/Al verifies the efficient hole-injecting role of Al (7 nm)/C60 (2.5 nm). When the applied voltage is highe...Show More

Impact of high voltage on the performance of high-contrast-ratio organic light emitting devices

Bao-Fu Ding;Kamal Alameh

2014 Conference on Optoelectronic and Microelectronic Materials & Devices

Year: 2014 | Conference Paper |

A collector-up AlGaAs/GaAs heterojunction bipolar transistor fabricated using three-stage MOCVD

H. Kawai;T. Kobayashi;K. Kaneko

IEEE Electron Device Letters

Year: 1988 | Volume: 9, Issue: 8 | Journal Article |

Cited by: Papers (3) | Patents (3)

A new collector-up AlGaAs/GaAs heterojunction bipolar transistor (HBT) is reported. This structure is designed to minimize parasitic capacitance and to eliminate trenches for making contacts. The emitter, external base, and intrinsic base and collector have been grown in three stages using metalorganic chemical vapor deposition (MOCVD). The current gain of this collector-up HBT (C-up HBT) with a 5...Show More

A collector-up AlGaAs/GaAs heterojunction bipolar transistor fabricated using three-stage MOCVD

H. Kawai;T. Kobayashi;K. Kaneko

IEEE Electron Device Letters

Year: 1988 | Volume: 9, Issue: 8 | Journal Article |

The effect of spatially distributed electron and hole blocking layers on the characteristics of OLEDs

Sundeep Ceasor;Ramesh Prasad;R.S. Anand

2007 International Workshop on Physics of Semiconductor Devices

Year: 2007 | Conference Paper |

Cited by: Papers (2)

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The recombination probability and hence the maximum light intensity of OLEDs largely depends upon the controlled injection of charge carriers and their confinement. In single layer OLEDs, recombination of carriers is highly affected due to quenching effects at cathode. In multilayer OLEDs, effective use of blocking and emissive layers provides better recombination of charge carriers leading to imp...Show More

The effect of spatially distributed electron and hole blocking layers on the characteristics of OLEDs

Sundeep Ceasor;Ramesh Prasad;R.S. Anand

2007 International Workshop on Physics of Semiconductor Devices

Year: 2007 | Conference Paper |

Achieving Highly Efficient and Stable Quantum Dot Light-Emitting Diodes With Interface Modification

Fengqing Tian;Yangbin Zhu;Zhongwei Xu;Baoyu Li;Xiaojing Zheng;Ziquan Ni;Hailong Hu;Ying Chen;Jinyong Zhuang;Longjia Wu;Dong Fu;Xiaolin Yan;Fushan Li

IEEE Electron Device Letters

Year: 2020 | Volume: 41, Issue: 9 | Journal Article |

Cited by: Papers (11)

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In conventional quantum dot light-emitting diodes (QLEDs), the organic charge transport materials are susceptible to erosion by water and oxygen, which would reduce the efficiency and lifetime of the devices. Herein, we modified the surface of the organic hole transport layer with an ultra-thin Al2O3 layer, which is deposited by using atomic layer deposition technique, to obtain the highly efficie...Show More

Achieving Highly Efficient and Stable Quantum Dot Light-Emitting Diodes With Interface Modification

Fengqing Tian;Yangbin Zhu;Zhongwei Xu;Baoyu Li;Xiaojing Zheng;Ziquan Ni;Hailong Hu;Ying Chen;Jinyong Zhuang;Longjia Wu;Dong Fu;Xiaolin Yan;Fushan Li

IEEE Electron Device Letters

Year: 2020 | Volume: 41, Issue: 9 | Journal Article |

Influence of the Charge Transfer on the Lifetime of Quantum-Dot Light-Emitting Diodes

Yue Liang;Chongyu Shen;Junfei Chen;Weiye Zheng;Zheng Xu;Jay Guoxu Liu

2019 16th China International Forum on Solid State Lighting & 2019 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)

Year: 2019 | Conference Paper |

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The operating lifetime of quantum-dot light-emitting diodes (QLEDs) is a critical parameter for quantum-dot display which is becoming an emerging display technology. To pinpoint the causes of device degradation, we demonstrated an enhanced reliability of all-solution processed QLEDs by introducing an insulating interfacial layer between the ETL and the QDs. It is confirmed that a PMMA interfacial ...Show More

Influence of the Charge Transfer on the Lifetime of Quantum-Dot Light-Emitting Diodes

Yue Liang;Chongyu Shen;Junfei Chen;Weiye Zheng;Zheng Xu;Jay Guoxu Liu

2019 16th China International Forum on Solid State Lighting & 2019 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)

Year: 2019 | Conference Paper |

Development of thin film metamorphic GaSb cells by epitaxial lift-off from GaAs substrates

E. J. Renteria;A. Mansoori;S. J. Addamane;D. M. Shima;C. P. Hains;G. Balakrishnan

2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC)

Year: 2016 | Conference Paper |

Cited by: Papers (5)

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A flexible, lightweight GaSb solar cell has been attempted. The thin-film cell was bonded to a flexible carrier and isolated from the GaAs substrate by using epitaxial lift-off technique. The characteristics of the thin-film metamorphic GaSb cells are compared to regular metamorphic cells and lattice matched GaSb substrate cells. J-V characterization under 1 sun illumination is presented.Show More

Development of thin film metamorphic GaSb cells by epitaxial lift-off from GaAs substrates

E. J. Renteria;A. Mansoori;S. J. Addamane;D. M. Shima;C. P. Hains;G. Balakrishnan

2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC)

Year: 2016 | Conference Paper |

All-solution-processed fabrication of electroluminescent devices with stacked blue, green and red quantum dot layers

Ki-Heon Lee;Eun-Pyo Jang;Jong-Woo Shin;Bu-Yong Kim;Seok-Young Yoon;Min Suk Oh;Heesun Yang

2017 24th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)

Year: 2017 | Conference Paper |

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Over the past few years the performance of colloidal quantum dot-light-emitting diode (QLED) has been progressively improved. However, most of QLED work has been fulfilled in the form of monochromatic device, while full-color-capable white QLED still remains nearly unexplored. Using red, green, and blue quantum dots (QDs), herein, we for the first time demonstrate all-solution-processed fabricatio...Show More

All-solution-processed fabrication of electroluminescent devices with stacked blue, green and red quantum dot layers

Ki-Heon Lee;Eun-Pyo Jang;Jong-Woo Shin;Bu-Yong Kim;Seok-Young Yoon;Min Suk Oh;Heesun Yang

2017 24th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)

Year: 2017 | Conference Paper |

Device Relevant Doped Amorphous Silicon Thin Films by Inductively Coupled Plasma Enhanced Chemical Vapor Deposition

Boon Heng TEO;Jin LIU;Jia GE;Delio PEREZ;Edwin CARMONA;Maryknol DELOS SANTOS;Jennifer Jordan EPISTOLA;Thomas MUELLER

2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC)

Year: 2018 | Conference Paper |

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Hydrogenated doped silicon thin films deposited using Inductively Coupled Plasma Enhanced Chemical Vapour Deposition were investigated for their film characteristics. In particular, the dilution ratio (H2: SiH4) and trimethylborane dopant gas ratio (TMB: SiH4) were varied in order to analyze their effect on the degree of crystallinity and conductivity. μRaman Spectroscopy and 4-Point Probe techniq...Show More

Device Relevant Doped Amorphous Silicon Thin Films by Inductively Coupled Plasma Enhanced Chemical Vapor Deposition

Boon Heng TEO;Jin LIU;Jia GE;Delio PEREZ;Edwin CARMONA;Maryknol DELOS SANTOS;Jennifer Jordan EPISTOLA;Thomas MUELLER

2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC)

Year: 2018 | Conference Paper |

Whole Metal Oxide p-i-n Deep Ultraviolet Light-Emitting Diodes Using i-Ga₂O₃ Active Emissive Film

Hsin-Ying Lee;Chih-Hsun Lin;Ching-Ting Lee

IEEE Photonics Technology Letters

Year: 2020 | Volume: 32, Issue: 15 | Journal Article |

Cited by: Papers (14)

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In this work, whole transparent p-NiO/i-Ga2O3/n-Ga2O3:Si deep ultraviolet light-emitting diodes (DUV-LEDs) were fabricated and studied. The p-NiO film was deposited using a radio frequency magnetron sputtering system. The i-Ga2O3 film and the n-Ga2O3:Si film were deposited using a vapor cooling condensation system at about 80 K and then annealed in an oxygen ambience at 900 °C for 60 minutes. Due ...Show More

Whole Metal Oxide p-i-n Deep Ultraviolet Light-Emitting Diodes Using i-Ga₂O₃ Active Emissive Film

Hsin-Ying Lee;Chih-Hsun Lin;Ching-Ting Lee

IEEE Photonics Technology Letters

Year: 2020 | Volume: 32, Issue: 15 | Journal Article |

Si-homoepitaxy by electron cyclotron resonance CVD

E. Conrad;L. Elstner;W. Fuhs;W. Henrion;P. Muller;B. Selle;U. Zeimer

Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997

Year: 1997 | Conference Paper |

Cited by: Papers (1) | Patents (1)

Low-temperature homoepitaxy of silicon has been achieved at T=450/spl deg/C by using electron cyclotron resonance CVD (2.45 GHz, up to 1.5 kW). H/sub 2/ and H/sub 2//Ar were used as excitation gases and either SiH/sub 4/ or mixtures of SiH/sub 4/ with PH/sub 3//H/sub 2/ or B/sub 2/H/sub 6//H/sub 2/ served as process gas. The epitaxial layers were grown with a thickness of up to 3 /spl mu/m at a ra...Show More

Si-homoepitaxy by electron cyclotron resonance CVD

E. Conrad;L. Elstner;W. Fuhs;W. Henrion;P. Muller;B. Selle;U. Zeimer

Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997

Year: 1997 | Conference Paper |

An Overview of Current Display Technologies and Possible Future Technologies

2019 IEEE International Conference on Electrical, Computer and Communication Technologies (ICECCT)

Year: 2019 | Conference Paper |

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This paper focuses on current display technologies which are dominant in the market. Merits and demerits of current display technologies have been analysed. Various display technologies present for 3D viewing experience have also been discussed. A new type of 3D display using technology for Transparent OLED displays has been proposed. Simulation for the emission spectrum of the multilayer displays...Show More

An Overview of Current Display Technologies and Possible Future Technologies

2019 IEEE International Conference on Electrical, Computer and Communication Technologies (ICECCT)

Year: 2019 | Conference Paper |

Modeling an Enhancement of Optical Effect of Nano sphere on Organic Light Emitting Diode

Megha Munikumar;Namratha Shetty T. Gopalkrishna;Divya Venkatesh;Chaya B Muniraju

2021 11th IEEE International Conference on Intelligent Data Acquisition and Advanced Computing Systems: Technology and Applications (IDAACS)

Year: 2021 | Conference Paper |

Cited by: Papers (1)

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An Organic Light Emitting Diode (OLED) is an optoelectronic system that operates on the basis of electroluminescence, or the recombination in the organic layer. By implementing some of the effective layers, such as injection layers, blocking layers, and so on, we were able to overcome substrate losses owing to Total Internal Reflection (TIR) and maximize the out-coupling efficiency of the OLED dev...Show More

Modeling an Enhancement of Optical Effect of Nano sphere on Organic Light Emitting Diode

Megha Munikumar;Namratha Shetty T. Gopalkrishna;Divya Venkatesh;Chaya B Muniraju

2021 11th IEEE International Conference on Intelligent Data Acquisition and Advanced Computing Systems: Technology and Applications (IDAACS)

Year: 2021 | Volume: 2 | Conference Paper |

Performance Optimization of Quantum Well Solar Cells Through Layer Thickness Variation

Sanjina Mostafa;Mohammad Nadeem;Md. Imran Hossain Arif;Muhammad Johirul Islam;Md. Iqbal Bahar Chowdhury

2020 23rd International Conference on Computer and Information Technology (ICCIT)

Year: 2020 | Conference Paper |

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This work aims to investigate the effects of thickness variation of the different layers of a quantum well solar cell on its performance parameters i.e. on the short circuit current and the conversion efficiency. The investigation incurs a number of simulations carried out using the ATLAS tool of Silvaco software. The analysis of the simulated results not only provide a better view as well as a ph...Show More

Performance Optimization of Quantum Well Solar Cells Through Layer Thickness Variation

Sanjina Mostafa;Mohammad Nadeem;Md. Imran Hossain Arif;Muhammad Johirul Islam;Md. Iqbal Bahar Chowdhury

2020 23rd International Conference on Computer and Information Technology (ICCIT)

Year: 2020 | Conference Paper |

Electrical simulation of a QLED device based on quantum dots using the Transfer Hamiltonian approach

J J Santaella;K Critchley;S Rodríguez-Bolívar;F M Gómez-Campos

2021 13th Spanish Conference on Electron Devices (CDE)

Year: 2021 | Conference Paper |

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This work reports the numerical simulation approach of an experimental electroluminescent QLED based on CuInS2/ZnS quantum dots as active layer, using the Transfer Hamiltonian approach. For that purpose, a simulation tool has been developed in Matlab to calculate the current density J(mA cm-2) and the fundamental I-V curve of each segment device independently. That tool allows us to thoroughly stu...Show More

Electrical simulation of a QLED device based on quantum dots using the Transfer Hamiltonian approach

J J Santaella;K Critchley;S Rodríguez-Bolívar;F M Gómez-Campos

2021 13th Spanish Conference on Electron Devices (CDE)

Year: 2021 | Conference Paper |

Influence of dislocations on the DC characteristics of AlGaAs/GaAs heterojunction bipolar transistors

H. Ito;O. Nakajima;T. Furuta;J.S. Harris

IEEE Electron Device Letters

Year: 1992 | Volume: 13, Issue: 5 | Journal Article |

Cited by: Papers (11)

The influence of dislocations on the minority electron lifetime in p-type GaAs layers and on AlGaAs/GaAs HBTs has been investigated. The minority electron lifetime in 1*10/sup 19//cm/sup 3/ doped p-GaAs decreases significantly when the dislocation density is greater than 10/sup 7//cm/sup 2/. This result agrees well with analysis of carrier transport in highly dislocated material. Current gain redu...Show More

Influence of dislocations on the DC characteristics of AlGaAs/GaAs heterojunction bipolar transistors

H. Ito;O. Nakajima;T. Furuta;J.S. Harris

IEEE Electron Device Letters

Year: 1992 | Volume: 13, Issue: 5 | Journal Article |

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