International Workshop on Physics of Semiconductor Devices (IWPSD)
2007 International Workshop on Physics of Semiconductor Devices
16-20 Dec. 2007
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Proceedings
The proceedings of this conference will be available for purchase through Curran Associates.
Physics of Semiconductor Devices, 2007 International Workshop on (PRT)
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Quantum cascade lasers: Quantum design, high performance technology for mid- and far-infrared photonics and commercialization
Publication Year: 2007,Page(s):3 - 3
Cited by: Papers (16)
The physics of quantum cascade lasers (QCLs) will be reviewed.1 The unipolar nature of these devices combined with the capabilities of electronic and photonic bandstructure engineering leads to unprecedented design flexibility and functionality compared to other lasers. Topics to be discusses also include: high-power room temperature cw QCLs grown by MOCVD2, nonlinear optical QCLs based on the int...Show More
Probing ultrafast processes in semiconductors and devices with ultrashort optical pulses
Publication Year: 2007,Page(s):4 - 4
Summary form only given. Faster and smaller- that has been a major goal in semiconductor device R and D. High speed semiconductor devices operating on a picosecond time scale are already available indicating that the nonequilibrium carrier dynamical processes occur in these devices on an ultrafast time scale. Just as it is interesting to be able to resolve smaller and smaller geometrical features ...Show More
FinFET provides several advantages over the planar MOSFET structure—less short-channel effect, less variation in threshold voltage, and higher carrier mobility, allowing scaling to 5nm gate length. Using embedded SRAM as the entry point, FinFET may enter manufacturing at the 32nm node. BSIM-MG is a turn-key compact model of multi-gate MOSFETs fabricated on either SOI or bulk substrates. A compact ...Show More
The manipulation of electron spins in semiconductors is a core concept in semiconductor spintronics. We review recent experiments that show how optical, electrical and exchange fields allow the control of spin-dependent phenomena in semiconductor devices. The first example addresses the all-electrical generation of electron spin polarization in conventional semiconductors via the spin-orbit intera...Show More
We discuss the recent advances in UV optoelectronic and high frequency electronic devices based on the AlGaN material system. The paper addresses the physical, electrical and optical properties of the material system and how they impact the device performance. We also describe the innovative approaches that lead to the solution of the growth and processing problems and thus enable the fabrication ...Show More
Physical and technological challenges of nanoelectronics devices for the end of the roadmap and beyond
S. Deleonibus;B. de Salvo;T. Ernst;O. Faynot;T. Poiroux;M. Vinet
Publication Year: 2007,Page(s):16 - 21
The microelectronics industry is facing historical challenges to down scale CMOS devices through the demand for low voltage, low power and high performance. The implementation of new materials and devices architectures will be necessary. HiK gate dielectric and metal gate are among the most strategic options to implement for power consumption and low supply voltage management. Multigate architectu...Show More
Electronics on plastic: A solution to the energy challenge, or just a pipe dream?
Publication Year: 2007,Page(s):22 - 22
For over 50 years, conjugated organic compounds have been recognized as an important class of electronic semiconductor materials, with potential application to light emission and detection. Very recently, these materials have been shown to generate extremely high efficient white light, and can also have high detection efficiencies. Due to their very low cost and low deposition temperatures, this s...Show More
Quantum cascade laser based techniques for the detection of explosives, chemical warfare agents and toxic industrial chemicals
Publication Year: 2007,Page(s):23 - 23
Cited by: Papers (1)
Worldwide occurrence of terrorist activities has made it imperative to use the best available technology for identifying and defeating terrorism involving improvised explosive devices (IED), chemical warfare agents (CWAs) and toxic industrial chemicals (TICs). Early and unequivocal detection of the explosives, CWAs and TICs require highly sensitive measurement techniques that are not confused by t...Show More
Manufacturing technology of amorphous and nanocrystalline silicon solar cells
Publication Year: 2007,Page(s):24 - 27
The last two decades have witnessed tremendous progress in the science and technology of amorphous and nanocrystalline silicon-based photovoltaic. Advances in the understanding of materials and devices have led manufacturers to expand their production capacity; the production of solar panels based on this technology exceeded 85 MW in 2006. In this paper we shall review the properties of the optimu...Show More
Nanomanufacturing for electronics and energy: A perspective on challenges and opportunities
Publication Year: 2007,Page(s):28 - 28
Advances in nanotechnology and translation of these advances to practical nanomanufacturing platforms, and processes have been the primary driver in advancing the march of Moore's law to ever shrinking device dimensions. Challenges with nanopatterning, introduction of new materials, interface and surface engineering are turning out to be fundamental issues of importance to understand and control t...Show More
TFT-LCD manufacturing technology — current status and future prospect —
Publication Year: 2007,Page(s):29 - 34
Cited by: Papers (1)
Current status and future prospect in the thin-film-transistor liquid crystal display (TFT-LCD) manufacturing technology are reviewed. Amorphous Si (a-Si) and low temperature poly-Si (LTPS) TFT-LCDs are discussed in this paper. Each device structure and fabrication process is outlined. Future trends in TFT-LCD manufacturing technologies are described in terms of substrate size enlargement and In-c...Show More
Interface properties of Hf-based high-k gate dielectrics —O vacancies and interface reaction—
Publication Year: 2007,Page(s):37 - 41
We have investigated, theoretically the cause of the substantial threshold voltage (Vth) shifts observed in Hf-related high-k gate stacks with p+poly-Si and p-metal gates, by focusing on the ionic nature of HfO2. The oxygen vacancy (Vo) level in ionic HfO2 is located in a relatively higher part of the band gap. This high position of the VO results in a significant elevation of the Fermi level for ...Show More
Miniaturization of the Si MOSFET required in order to attain higher transistor performance and greater economies of scale have spurred the need for significant materials innovations. This is most apparent in the search for the ideal high-k/metal gate stack as replacement for conventional SiON/Poly-Si gate stacks. In this paper, some of the key advances that have made high-k/metal gate stacks a rea...Show More
A multiscale Green's function method is described for modeling impurities in strained silicon. The model seamlessly links the length scales from atomistic to macro. The model accounts for the discrete lattice effects, elastic anisotropy, nonlinear effects, and the presence of point defects as well as surfaces and interfaces in the solid. An effective force, called the Kanzaki force, is defined, wh...Show More
Strained-Si heterostructure field effect devices: Strain-engineering in CMOS technology
Publication Year: 2007,Page(s):52 - 56
Cited by: Papers (2)
Meeting performance targets of 22 nm Si- CMOS and beyond, as per 2006 ITRS update, will require innovation at all levels of CMOS development, including new channel materials, device design, integration, circuit design, and system architecture. In new channel materials, some of the options under consideration include (a) local and global strain, (b) Si surface orientation, and (c) non-Si materials ...Show More
In order to design integrated circuits which can be manufactured with high yield the variations which can occur during manufacturing must be included with the compact models. The manufacturing variations comprise a complex correlated set of statistical distributions. This paper presents some of the current options and challenges in modeling variation. Improving the prediction of statistical circui...Show More
Approaches to nanoscale MOSFET compact modeling using surface potential based models
Publication Year: 2007,Page(s):62 - 67
The objective of this paper is to provide an appraisal of the recent advances in MOSFET compact modeling using the surface potential based approach. MOSFET technology has been at the forefront of the digital and analog circuits for very large scale integration. As a result, development of accurate and efficient MOSFET models becomes critical. The surface potential based models not only lead to a m...Show More
Monte Carlo modeling of nanometer scale MOSFETs
Enrico Sangiorgi;Pierpaolo Palestri;David Esseni;Claudio Fiegna;Luca Selmi
Publication Year: 2007,Page(s):68 - 73
Recent developments in the Monte Carlo method for the simulation of semi-classical carrier transport in nano-MOSFETs include the treatment of quantum-mechanical effects in the simulation (using either the Multi-Subband approach or quantum corrections to the electrostatic potential). In this paper, after reviewing recent progress in this field, selected applications are presented, including the ana...Show More
Propagating variability from technology to system level
Bart Dierickx;Miguel Miranda;Petr Dobrovolny;Florian Kutscherauer;Antonis Papanikolaou;Pol Marchal
Publication Year: 2007,Page(s):74 - 79
As CMOS technology feature sizes decrease, variability more and more jeopardizes system level parametric and functional yield. This paper proposes a framework that can capture variability at all levels in the design flow. It offers a correlated view on yield, timing, dynamic and static energy. Preservation on rare events in variability distributions is obtained by the Weighted Monte Carlo techniqu...Show More
ESD protection circuits are part of any electronic circuit to ensure robustness against electrical surges. The choice of the ESD protection concept strongly depends on the IO devices. The integration of devices like DeMOS for high voltage interfaces in system on chip applications and multigate FETs in advanced CMOS requires new process optimization strategies taking into account the high current b...Show More
‘wet N2O oxidation’ process and interface state density characterization of nanoscale nitrided SiO2 for flash memory application
Publication Year: 2007,Page(s):86 - 91
In this paper we first present the ‘wet N2O’ furnace oxidation process to grow nitrided tunnel oxides in the thickness range 6 to 8 nm on silicon at a temperature of 800°C. Electrical characteristics of MOS capacitors and MOSFETs fabricated using this oxide as gate oxide have been evaluated and the superior features of this oxide are ascertained. The frequency response of the interface states, bef...Show More
Multiple gate MOSFETs: The road to the future
Publication Year: 2007,Page(s):96 - 101
Cited by: Papers (5)
The advantages of multiple gate MOSFETs (MuGFETs) are discussed. The interesting concept of operation of a fully depleted single gate SOI MOSFET as a virtual double gate MOSFET is highlighted. Also, the advantages of lower gate leakage current and short-channel effects in MuGFETs are discussed in detail.Show More
Challenges in large area, large volume amorphous-silicon based solar module manufacturing
Publication Year: 2007,Page(s):102 - 102
Cited by: Papers (1)
Summary form only given. Advances in amorphous silicon technology (a-Si:H) and large area liquid crystal display (LCD) manufacturing have led to a truly green thin film photovoltaic manufacturing methodology with no toxic waste. Manufacturing with this technology is relatively mature for areas ~1 m2 . In the last ten years several organizations have been producing commercial products from 1 W to 1...Show More
Proceedings
The proceedings of this conference will be available for purchase through Curran Associates.
Physics of Semiconductor Devices, 2007 International Workshop on (PRT)
- Print on DemandPurchase at Partner
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