Abstract:
A new collector-up AlGaAs/GaAs heterojunction bipolar transistor (HBT) is reported. This structure is designed to minimize parasitic capacitance and to eliminate trenches...Show MoreMetadata
Abstract:
A new collector-up AlGaAs/GaAs heterojunction bipolar transistor (HBT) is reported. This structure is designed to minimize parasitic capacitance and to eliminate trenches for making contacts. The emitter, external base, and intrinsic base and collector have been grown in three stages using metalorganic chemical vapor deposition (MOCVD). The current gain of this collector-up HBT (C-up HBT) with a 5*14- mu m/sup 2/ collector is 15.<>
Published in: IEEE Electron Device Letters ( Volume: 9, Issue: 8, August 1988)
DOI: 10.1109/55.764
Citations are not available for this document.
Cites in Papers - |
Cites in Papers - IEEE (1)
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1.
J.J. Chen, G.-B. Gao, J.-I. Chyi, H. Morkoc, "Breakdown behavior of GaAs/AlGaAs HBTs", IEEE Transactions on Electron Devices, vol.36, no.10, pp.2165-2172, 1989.
Cites in Papers - Other Publishers (2)
1.
O. Nur, M. Willander, "Switching characteristics of Schottky collector HBT", Microelectronics Journal, vol.24, no.7, pp.823, 1993.
2.
H.R. Chen, C.Y. Chang, K.L. Tsai, J.S. Tsang, C.P. Lee, "Novel AlGaAs/GaAs heterojunction bipolar transistors fabricated by two-stage molecular beam epitaxy", Solid-State Electronics, vol.36, no.4, pp.485, 1993.
