Abstract:
The influence of dislocations on the minority electron lifetime in p-type GaAs layers and on AlGaAs/GaAs HBTs has been investigated. The minority electron lifetime in 1*1...Show MoreMetadata
Abstract:
The influence of dislocations on the minority electron lifetime in p-type GaAs layers and on AlGaAs/GaAs HBTs has been investigated. The minority electron lifetime in 1*10/sup 19//cm/sup 3/ doped p-GaAs decreases significantly when the dislocation density is greater than 10/sup 7//cm/sup 2/. This result agrees well with analysis of carrier transport in highly dislocated material. Current gain reduction in HBTs with high dislocation density is found to be due to two effects: reduction of the electron lifetime in the base layer and an increase of the recombination current in the emitter-base junction depletion region. These two effects are comparable in reducing the current gain.<>
Published in: IEEE Electron Device Letters ( Volume: 13, Issue: 5, May 1992)
DOI: 10.1109/55.145037
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Cites in Papers - IEEE (3)
Select All
1.
Daniel J. Chmielewski, Daniel L. Lepkowski, Jacob T. Boyer, Tyler J. Grassman, Steven A. Ringel, "Comparative Study of ∼2.05 eV Lattice-Matched and Metamorphic (Al)GaInP Solar Cells Grown by MOCVD", IEEE Journal of Photovoltaics, vol.8, no.6, pp.1601-1607, 2018.
2.
A. Cavus, R. Sandhu, C. Monier, D. Pascua, C. Cox, B. Poust, R. Hsing, A. Noori, S. Hayashi, M. Goorsky, A. Gutierrez-Aitken, "Metamorphic 6.0 /spl Aring/ narrow band gap HBT technology on InP substrates", 2006 International Conference on Indium Phosphide and Related Materials Conference Proceedings, pp.381-386, 2006.
3.
K. Ikossi-Anastasiou, "GaAsSb for heterojunction bipolar transistors", IEEE Transactions on Electron Devices, vol.40, no.5, pp.878-884, 1993.
Cites in Papers - Other Publishers (8)
1.
Isabella Peracchi, Carsten Richter, Tobias Schulz, Jens Martin, Albert Kwasniewski, Sebastian Kläger, Christiane Frank-Rotsch, Patrick Steglich, Karoline Stolze, "Preparation and Investigation of Micro-Transfer-Printable Single-Crystalline InP Coupons for Heterogeneous Integration of III-V on Si", Crystals, vol.13, no.7, pp.1126, 2023.
2.
Yves Mols, Abhitosh Vais, Sachin Yadav, Liesbeth Witters, Komal Vondkar, Reynald Alcotte, Marina Baryshnikova, Guillaume Boccardi, Niamh Waldron, Bertrand Parvais, Nadine Collaert, Robert Langer, Bernardette Kunert, "Monolithic Integration of Nano-Ridge Engineered InGaP/GaAs HBTs on 300 mm Si Substrate", Materials, vol.14, no.19, pp.5682, 2021.
3.
Eddy Simoen, "Impact of Defects on the Performance of High-Mobility Semiconductor Devices", High Mobility Materials for CMOS Applications, pp.159, 2018.
4.
Yongkun Sin, Nathan Presser, Paul Adams, "A comparative study of metamorphic InP/InGaAs double heterojunction bipolar transistors with InP and InAIP buffer layers grown by molecular beam epitaxy", Journal of Electronic Materials, vol.35, no.2, pp.266, 2006.
5.
A. Cavus, R. Sandhu, C. Monier, C. Cox, D. Pascua, A. Gutierrez-Aitken, A. Noori, S. Hayashi, M. Goorsky, "Development of 6.00 Å graded metamorphic buffer layers and high performance In[sub 0.86]Al[sub 0.14]As∕In[sub 0.86]Ga[sub 0.14]As heterojunction bipolar transistor devices", Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol.24, no.3, pp.1492, 2006.
6.
W. E. Hoke, P. J. Lemonias, T. D. Kennedy, A. Torabi, E. K. Tong, R. J. Bourque, J.-H. Jang, G. Cueva, D. C. Dumka, I. Adesida, K. L. Chang, K. C. Hsieh, "Metamorphic heterojunction bipolar transistors and P–I–N photodiodes on GaAs substrates prepared by molecular beam epitaxy", Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol.19, no.4, pp.1505, 2001.
7.
Hann-Ping Hwang, Jia-Lin Shieh, Jen-Inn Chyi, "D.c. and microwave characteristics of In0.32Al0.68As/In0.33Ga0.67As heterojunction bipolar transistors grown on GaAs", Solid-State Electronics, vol.43, no.3, pp.463, 1999.
8.
Patrick J. McNally, P. A. F. Herbert, T. Tuomi, M. Karilahti, J. A. Higgins, "Analysis of the impact of dislocation distribution on the breakdown voltage of GaAs-based power varactor diodes", Journal of Applied Physics, vol.79, no.11, pp.8294, 1996.
