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Millimeter-wave MEMS capacitive switch in vacuum-sealed in-line wafer level package
Takashi Yamamoto;Takahiro Sogo;Susumu Obata;Takeshi Miyagi;Shigeru Hiura
In this paper, we present a millimeter-wave microelectromechanical systems (MEMS) switch with a microsecond switching time. The optimization of the mechanical structure, application of high actuation voltages and encapsulation with a vacuum-sealed package result in a higher speed with which a beam of the MEMS switch is pulled in and pulled out. In order to reduce the packaging cost, we encapsulate...Show More
Highly reliable and manufacturable in-line wafer-level hermetic packages for RF MEMS variable capacitor
Akihiro Kojima;Yoshiaki Shimooka;Yoshiaki Sugizaki;Mitsuyoshi Endo;Hiroaki Yamazaki;Etsuji Ogawa;Tamio Ikehashi;Tatsuya Ohguro;Susumu Obata;Takeshi Miyagi;Ikuo Mori;Yoshiaki Toyoshima;Hideki Shibata
TRANSDUCERS 2009 - 2009 International Solid-State Sensors, Actuators and Microsystems Conference
Year: 2009 | Conference Paper |
Cited by: Papers (6)
In this paper, we report a thin-film encapsulation technology for wafer-level microelectromechanical systems (MEMS) variable capacitor package. The electrical characteristics of MEMS are adversely affected by moisture. In order to prevent moisture from permeating into a package, the top surface was protected with a plasma-enhanced chemical vapor deposition (PE-CVD) SiN layer. The developed package...Show More
Highly reliable and manufacturable in-line wafer-level hermetic packages for RF MEMS variable capacitor
Akihiro Kojima;Yoshiaki Shimooka;Yoshiaki Sugizaki;Mitsuyoshi Endo;Hiroaki Yamazaki;Etsuji Ogawa;Tamio Ikehashi;Tatsuya Ohguro;Susumu Obata;Takeshi Miyagi;Ikuo Mori;Yoshiaki Toyoshima;Hideki Shibata
Year: 2009 | Conference Paper |
An RF MEMS Variable Capacitor with Intelligent Bipolar Actuation
Tamio Ikehashi;Takayuki Miyazaki;Hiroaki Yamazaki;Atsushi Suzuki;Etsuji Ogawa;Shinji Miyano;Tomohiro Saito;Tatsuya Ohguro;Takeshi Miyagi;Yoshiaki Sugizaki;Nobuaki Otsuka;Hideki Shibata;Yoshiaki Toyoshima
2008 IEEE International Solid-State Circuits Conference - Digest of Technical Papers
Year: 2008 | Conference Paper |
We propose an IBA scheme based on a pull-out detection, which is suitable for implementing in a circuit. The scheme is implemented in a driver IC that is part of a module with an RF MEMS variable capacitor. No failures are observed over 108 cycles at 85degC, which is an accelerated charging condition.Show More
Robust hermetic wafer level thin-film encapsulation technology for stacked MEMS / IC package
Y. Shimooka;M. Inoue;M. Endo;S. Obata;A. Kojima;T. Miyagi;Y. Sugizaki;I. Mori;H. Shibata
2008 58th Electronic Components and Technology Conference
Year: 2008 | Conference Paper |
This paper reports a thin-film encapsulation technology for wafer level micro-electro-mechanical systems (MEMS) package, using poly-benzo-oxazole (PBO) sacrificial material and plasma enhanced chemical vapor deposited silicon oxide (PECVD SiO) cap layer. This technique, which is applicable for MEMS technologies, saves die size and enables conventional package processes such as dicing, picking, mou...Show More
MCM-D/L using copper/photosensitive-BCB multilayer for upper microwave band systems
T. Miyagi;Y. Iseki;K. Higuchi;Y. Shizuki;T. Hanawa;E. Takagi;M. Saito;K. Yoshihara;M. Konno
1996 Proceedings 46th Electronic Components and Technology Conference
Year: 1996 | Conference Paper |
This paper describes an MCM-D/L technology for upper microwave band systems. The substrate of this MCM is constructed of copper/photosensitive-benzocyclobutene (P-BCB) multilayer formatted onto a print wiring board (PWB). Features of the developed MCM are (1) a novel microstrip structure for improvement of high-frequency characteristics and (2) a low-cost simple copper/P-BCB process using polishin...Show More
GaAs multichip module for a parallel processing system
The module described is a high-speed data transfer network for a parallel processing system. The high-speed data transfer network connecting multiple processor units was realized in a module using 8-bit slice GaAs bus logic (BL) LSIs which operate at 100 MHz. The GaAs multichip module consists of 12 GaAs BL LSIs in a 3*4 matrix. Each GaAs chip is sealed in a chip carrier with bumps. The chip carri...
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Show MoreGaAs multichip module for a parallel processing system
40th Conference Proceedings on Electronic Components and Technology
Year: 1990 | Conference Paper |
A high-speed data transfer network for a parallel processing system has been developed on the basis of multichip packaging technology. The high-speed data transfer network connecting multiple processor units (PUs) has been achieved in a module using 8 bit-slice GaAs bus logic (BL) LSIs operating at 100 MHz. The GaAs multichip module consists of 12 GaAs BL LSIs in a 3*4 matrix. Each GaAs chip is se...Show More
Electrical properties of a multilayer thin film substrate for multichip packages
Proceedings. Japan IEMT Symposium, Sixth IEEE/CHMT International Electronic Manufacturing Technology Symposium
Year: 1989 | Conference Paper |
Cited by: Papers (17)
The authors report the electrical properties of multilayer thin-film interconnects examined under circumstances in which the signal lines were sandwiched between mesh-pattern metal layers (called meshed stripline). Multilayer thin-film substrates with various transmission line structures were manufactured with several mesh patterns (power/ground planes) and signal lines, and the characteristic imp...Show More
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