Abstract:
Low-temperature homoepitaxy of silicon has been achieved at T=450/spl deg/C by using electron cyclotron resonance CVD (2.45 GHz, up to 1.5 kW). H/sub 2/ and H/sub 2//Ar w...Show MoreMetadata
Abstract:
Low-temperature homoepitaxy of silicon has been achieved at T=450/spl deg/C by using electron cyclotron resonance CVD (2.45 GHz, up to 1.5 kW). H/sub 2/ and H/sub 2//Ar were used as excitation gases and either SiH/sub 4/ or mixtures of SiH/sub 4/ with PH/sub 3//H/sub 2/ or B/sub 2/H/sub 6//H/sub 2/ served as process gas. The epitaxial layers were grown with a thickness of up to 3 /spl mu/m at a rate of up to 25 nm/min. Highly phosphorus-doped epitaxial layers were used as emitters in 2/spl times/2 cm/sup 2/ solar cell structures on p-type FZ- and SILSO-wafers as base material. These cells had AM1.5 efficiencies of up to 15% and 11%, respectively. The results suggest that recombination at the base-emitter interface is a limiting factor.
Date of Conference: 29 September 1997 - 03 October 1997
Date Added to IEEE Xplore: 06 August 2002
Print ISBN:0-7803-3767-0
Print ISSN: 0160-8371
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Cites in Papers - |
Cites in Papers - Other Publishers (1)
1.
Lars Oberbeck, Jan Schmidt, Thomas A. Wagner, Ralf B. Bergmann, "High-rate deposition of epitaxial layers for efficient low-temperature thin film epitaxial silicon solar cells", Progress in Photovoltaics: Research and Applications, vol.9, no.5, pp.333, 2001.
