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Eric M. Vogel - IEEE Xplore Author Profile
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Eric M. Vogel

Also published under: E. M. Vogel, Eric Vogel, E. Vogel

Publications
76
Citations
1,703
Publications by Year
19952024
Co-Authors:
Show All Co-Authors (200)
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Eric M. Vogel

Also published under: E. M. Vogel, Eric Vogel, E. Vogel

Affiliation

School of Materials Science and Engineering
Georgia Institute of Technology
Atlanta, GA, USA

Publication Topics

Biography

Eric M. Vogel (S'93–M'96–SM'06) received the Ph.D. degree in electrical engineering from North Carolina State University, Raleigh, NC, in 1998.,He is currently Associate Professor of Electrical Engineering at the University of Texas, Dallas (UTD). Prior to joining UTD in August of 2006, he was Leader of the CMOS and Novel Devices Group at the National Institute of Standards and Technology. He has performed a broad range of research in MOS devices, nanodevices, and gate dielectrics including electrical characterization, physical characterization, and reliability physics. He has published over 50 journal publications and proceedings, has written two book chapters, and has given over 25 invited talks and tutorials.,Dr. Vogel is a member of the...
Publications
76
Citations
1,703
Publications by Year
19952024
Co-Authors:
Show All Co-Authors (200)
Author's Published Works

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Adaptive Interconnection of High-Performance Micromodular Silicon Transistors Using Electrohydrodynamic Jet Printing

Hubert N. Elly;Kaifan Yue;Rebecca K. Banner;Siddharth Kurup;Daniel Aziz;Saksham Malik;Kira L. Barton;Michael A. Filler;Eric M. Vogel

IEEE Transactions on Electron Devices
Year: 2024 | Volume: 71, Issue: 11 | Journal Article |
Micromodular n-channel metal-oxide-silicon transistors were fabricated, transferred to a foreign substrate, and adaptively interconnected using high-resolution electrohydrodynamic jet (e-jet) printed metal wires to create depletion-load nMOS inverters. The transferred transistors have effective electron mobilities approaching 500 cm $^{{2}} \cdot $ V $^{-{1}} \cdot $ s−1 and subthreshold swing a...Show More

Adaptive Interconnection of High-Performance Micromodular Silicon Transistors Using Electrohydrodynamic Jet Printing

Hubert N. Elly;Kaifan Yue;Rebecca K. Banner;Siddharth Kurup;Daniel Aziz;Saksham Malik;Kira L. Barton;Michael A. Filler;Eric M. Vogel

Year: 2024 | Volume: 71, Issue: 11 | Journal Article |

ReSta: Recovery of Accuracy During Training of Deep Learning Models in a 14-nm Technology-Based ReRAM Array

Fabia Farlin Athena;Nanbo Gong;Ramachandran Muralidhar;Paul Solomon;Eric M. Vogel;Vijay Narayanan;Takashi Ando

IEEE Transactions on Electron Devices
Year: 2023 | Volume: 70, Issue: 11 | Journal Article |
Cited by: Papers (1)
In this article, we propose an electrical bias technique to recover the accuracy of a degraded ${\text {HfO}}_{x}$ -based resistive random access memory (ReRAM) array in deep neural network (DNN) training. We simulate degradation through the application of ${\sim } {10}^{{4}}$ pulses having high pulse amplitude, resulting in a fatigued ReRAM array that fails to converge during training. We prop...Show More

ReSta: Recovery of Accuracy During Training of Deep Learning Models in a 14-nm Technology-Based ReRAM Array

Fabia Farlin Athena;Nanbo Gong;Ramachandran Muralidhar;Paul Solomon;Eric M. Vogel;Vijay Narayanan;Takashi Ando

Year: 2023 | Volume: 70, Issue: 11 | Journal Article |

Local Learning in RRAM Neural Networks with Sparse Direct Feedback Alignment

Brian Crafton;Matt West;Padip Basnet;Eric Vogel;Arijit Raychowdhury

2019 IEEE/ACM International Symposium on Low Power Electronics and Design (ISLPED)
Year: 2019 | Conference Paper |
Cited by: Papers (7)
Neural networks utilizing non-volatile random access memory (NVM) exhibit excellent power reduction over traditional CMOS implementations. RRAM (resistive random access memory) is one such emerging memory technology offering low energy, good endurance, and a large analog conductance window. When implemented in a crossbar architecture, these networks are able to bypass the von-Neumann bottleneck by...Show More

Local Learning in RRAM Neural Networks with Sparse Direct Feedback Alignment

Brian Crafton;Matt West;Padip Basnet;Eric Vogel;Arijit Raychowdhury

Year: 2019 | Conference Paper |

Computational Investigation of Nanoscale Memristor Devices for Neuromorphic Computing

Darshan G. Pahinkar;Pradip Basnet;Bill Zivasatienraj;Alex Weidenbach;Matthew West;W. Alan Doolittle;Eric Vogel;Samuel Graham

2019 18th IEEE Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (ITherm)
Year: 2019 | Conference Paper |
Cited by: Papers (1)
Field effect transistors (FETs) with their Boolean operation have been the fundamental building block of digital computers. While this digital framework is excellent at performing complex arithmetic and logic calculations, it lags far behind the human brain in key areas such as adaptivity, generalization, and pattern recognition. Neuromorphic computation using nanoscale adaptive oxide devices or m...Show More

Computational Investigation of Nanoscale Memristor Devices for Neuromorphic Computing

Darshan G. Pahinkar;Pradip Basnet;Bill Zivasatienraj;Alex Weidenbach;Matthew West;W. Alan Doolittle;Eric Vogel;Samuel Graham

Year: 2019 | Conference Paper |

Total Ionizing Dose Effects and Proton-Induced Displacement Damage on MoS2-Interlayer-MoS2 Tunneling Junctions

Pan Wang;Christopher J. Perini;Andrew O’Hara;Huiqi Gong;Pengfei Wang;En Xia Zhang;Michael W. Mccurdy;Daniel M. Fleetwood;Ronald D. Schrimpf;Sokrates T. Pantelides;Eric M. Vogel

IEEE Transactions on Nuclear Science
Year: 2019 | Volume: 66, Issue: 1 | Journal Article |
Cited by: Papers (6)
Tunneling-dominated charge transport is demonstrated in vertically stacked MoS2/interlayer/MoS2 heterostructures with Al2O3, hexagonal boron nitride (h-BN), and HfO2 dielectrics. All devices are highly resistant to 10-keV X-ray irradiation. Only small transient changes in X-ray-induced photocurrent are observed as a result of trap creation in the thin interlayer dielectric, with rapid passivation....Show More

Total Ionizing Dose Effects and Proton-Induced Displacement Damage on MoS2-Interlayer-MoS2 Tunneling Junctions

Pan Wang;Christopher J. Perini;Andrew O’Hara;Huiqi Gong;Pengfei Wang;En Xia Zhang;Michael W. Mccurdy;Daniel M. Fleetwood;Ronald D. Schrimpf;Sokrates T. Pantelides;Eric M. Vogel

Year: 2019 | Volume: 66, Issue: 1 | Journal Article |

Radiation-Induced Charge Trapping and Low-Frequency Noise of Graphene Transistors

P. Wang;C. Perini;A. O’Hara;B. R. Tuttle;E. X. Zhang;H. Gong;C. Liang;R. Jiang;W. Liao;D. M. Fleetwood;R. D. Schrimpf;E. M. Vogel;S. T. Pantelides

IEEE Transactions on Nuclear Science
Year: 2018 | Volume: 65, Issue: 1 | Journal Article |
Cited by: Papers (15)
We have performed a detailed evaluation of radiation-induced charge trapping and low-frequency noise for back-gated graphene transistors fabricated on a thermal SiO2 layer, with Al2O3 or hexagonal boron nitride passivation over-layers. Irradiation with positive or 0 V back-gate bias leads to negative shifts of the charge neutral point (CNP) of the graphene transistors; irradiation under negative b...Show More

Radiation-Induced Charge Trapping and Low-Frequency Noise of Graphene Transistors

P. Wang;C. Perini;A. O’Hara;B. R. Tuttle;E. X. Zhang;H. Gong;C. Liang;R. Jiang;W. Liao;D. M. Fleetwood;R. D. Schrimpf;E. M. Vogel;S. T. Pantelides

Year: 2018 | Volume: 65, Issue: 1 | Journal Article |

Enhancement of light-2D material interaction envisioned for energy harvesting applications

H. Taghinejad;M. Taghinejad;A. Tarasov;A. Hosseinnia;H. Moradinejad;A. Eftekhar;E. Vogel;A. Adibi

2017 Conference on Lasers and Electro-Optics (CLEO)
Year: 2017 | Conference Paper |
Strong enhancement of Raman signal upon integration of trilayer MoS2 with Fabry-Perot (FP) optical cavities is reported. We also discuss prospective application of enhanced light matter interaction in 2D materials for energy harvesting purposes.Show More

Enhancement of light-2D material interaction envisioned for energy harvesting applications

H. Taghinejad;M. Taghinejad;A. Tarasov;A. Hosseinnia;H. Moradinejad;A. Eftekhar;E. Vogel;A. Adibi

Year: 2017 | Conference Paper |

Comprehensive Capacitance–Voltage Simulation and Extraction Tool Including Quantum Effects for High-k on SixGe1−x and InxGa1−xAs: Part I—Model Description and Validation

Sarkar R. M. Anwar;William G. Vandenberghe;Gennadi Bersuker;Dmitry Veksler;Giovanni Verzellesi;Luca Morassi;Rohit V. Galatage;Sumit Jha;Creighton Buie;Adam T. Barton;Eric M. Vogel;Christopher L. Hinkle

IEEE Transactions on Electron Devices
Year: 2017 | Volume: 64, Issue: 9 | Journal Article |
Cited by: Papers (3)
High-mobility alternative channel materials to silicon are critical to the continued scaling of MOS devices. The analysis of capacitance–voltage (C–V) measurements on these new materials with high-k gate dielectrics is a critical technique to determine many important gate-stack parameters. While there are very useful C–V analysis tools available to the community, these tools are all limited in the...Show More

Comprehensive Capacitance–Voltage Simulation and Extraction Tool Including Quantum Effects for High-k on SixGe1−x and InxGa1−xAs: Part I—Model Description and Validation

Sarkar R. M. Anwar;William G. Vandenberghe;Gennadi Bersuker;Dmitry Veksler;Giovanni Verzellesi;Luca Morassi;Rohit V. Galatage;Sumit Jha;Creighton Buie;Adam T. Barton;Eric M. Vogel;Christopher L. Hinkle

Year: 2017 | Volume: 64, Issue: 9 | Journal Article |

Spatio-temporal pattern recognition in neural circuits with memory-transistor-driven memristive synapses

Kurtis D. Cantley;Robert C. Ivans;Anand Subramaniam;Eric M. Vogel

2017 International Joint Conference on Neural Networks (IJCNN)
Year: 2017 | Conference Paper |
Cited by: Papers (5)
Spiking neural circuits have been designed in which the memristive synapses exhibit spike timing-dependent plasticity (STDP). STDP is a learning mechanism where synaptic weight (the strength of the connection between two neurons) depends on the timing of pre-and post-synaptic action potentials. A known capability of networks with STDP is detection of simultaneously recurring patterns within the po...Show More

Spatio-temporal pattern recognition in neural circuits with memory-transistor-driven memristive synapses

Kurtis D. Cantley;Robert C. Ivans;Anand Subramaniam;Eric M. Vogel

Year: 2017 | Conference Paper |

Material Constraints and Scaling of 2-D Vertical Heterostructure Interlayer Tunnel Field-Effect Transistors

Philip M. Campbell;Jake K. Smith;W. Jud Ready;Eric M. Vogel

IEEE Transactions on Electron Devices
Year: 2017 | Volume: 64, Issue: 6 | Journal Article |
Cited by: Papers (8)
Aggressive scaling of logic devices is quickly approaching the physical limitations of conventional CMOS devices, resulting in the need for novel device architectures. One proposed device is the 2-D interlayer tunnel field-effect transistor (ITFET), which relies on tunneling within a vertical heterostructure of 2-D materials. Steep-slope operation of the ITFET relies on proper band alignment for t...Show More

Material Constraints and Scaling of 2-D Vertical Heterostructure Interlayer Tunnel Field-Effect Transistors

Philip M. Campbell;Jake K. Smith;W. Jud Ready;Eric M. Vogel

Year: 2017 | Volume: 64, Issue: 6 | Journal Article |

Piezoresistive strain sensing with flexible MoS2 field-effect transistors

Alexey Tarasov;Meng-Yen Tsai;Hossein Taghinejad;Philip M. Campbell;Ali Adibi;Eric M. Vogel

2015 73rd Annual Device Research Conference (DRC)
Year: 2015 | Conference Paper |
Cited by: Papers (2)
We demonstrate piezoresistive strain sensors based on flexible MoS2 field-effect transistors made from a highly uniform large-area trilayer film. The origin of the piezoresistive effect in MoS2 is explained to be a strain-induced band gap change, as confirmed by optical spectroscopy. The results are in good agreement with recently reported simulations and spectroscopic studies on strained exfoliat...Show More

Piezoresistive strain sensing with flexible MoS2 field-effect transistors

Alexey Tarasov;Meng-Yen Tsai;Hossein Taghinejad;Philip M. Campbell;Ali Adibi;Eric M. Vogel

Year: 2015 | Conference Paper |

Dual-gated field-effect transistors made from wafer-scale synthetic few-layer molybdenum disulfide

A. Tarasov;P. M. Campbell;M.-Y. Tsai;Z. Hesabi;J. Feirer;S. Graham;W. J. Ready;E. M. Vogel

72nd Device Research Conference
Year: 2014 | Conference Paper |
Cited by: Papers (1)
Molybdenum disulfide (MoS2) has recently received significant attention because of its interesting thickness-dependent properties and its potential as a semiconducting substitute to graphene [1,2]. Most of the studies so far have focused on small (< 100 microns) exfoliated MoS2 flakes [1-3]. For manufacturable electronics, it is essential to have large-area material that is compatible with standar...Show More

Dual-gated field-effect transistors made from wafer-scale synthetic few-layer molybdenum disulfide

A. Tarasov;P. M. Campbell;M.-Y. Tsai;Z. Hesabi;J. Feirer;S. Graham;W. J. Ready;E. M. Vogel

Year: 2014 | Conference Paper |

Investigation of switching mechanism in forming-free multi-level resistive memories with atomic layer deposited HfTiOx nanolaminate

Bhaswar Chakrabarti;Enrique MIranda;Eric M. Vogel

72nd Device Research Conference
Year: 2014 | Conference Paper |
Cited by: Papers (1)
Forming-free resistive memories (RRAM) have recently attracted significant attention as the forming process requires high voltage and can lead to low yield because of current overshoot [1-2]. We have recently demonstrated forming-free switching with multi-level operation in TiN/HfTiOx/TiN resistive memories [3]. However, a fundamental understanding of the switching mechanisms is lacking. Recently ...Show More

Investigation of switching mechanism in forming-free multi-level resistive memories with atomic layer deposited HfTiOx nanolaminate

Bhaswar Chakrabarti;Enrique MIranda;Eric M. Vogel

Year: 2014 | Conference Paper |

Nonlinear Switching With Ultralow Reset Power in Graphene-Insulator-Graphene Forming-Free Resistive Memories

Bhaswar Chakrabarti;Tania Roy;Eric M. Vogel

IEEE Electron Device Letters
Year: 2014 | Volume: 35, Issue: 7 | Journal Article |
Cited by: Papers (21)
A high-performance resistive random access memory with graphene top and bottom electrodes and TiOx/Al2O3/TiO2 dielectric stacks is reported. The devices exhibit forming-free switching with stable operation at sub-μA operating current. The switching is highly nonlinear with rectifying characteristics in the sub-μA regime. As a result, the reset current is orders of magnitude smaller than the curren...Show More

Nonlinear Switching With Ultralow Reset Power in Graphene-Insulator-Graphene Forming-Free Resistive Memories

Bhaswar Chakrabarti;Tania Roy;Eric M. Vogel

Year: 2014 | Volume: 35, Issue: 7 | Journal Article |

Forming-free resistive switching with low current operation in graphene-insulator-graphene structures

Bhaswar Chakrabarti;Tania Roy;Corey A. Joiner;Zohreh R. Hesabi;Eric M. Vogel

71st Device Research Conference
Year: 2013 | Conference Paper |
Cited by: Papers (2)
Graphene as a conducting electrode has attracted significant attention due to its low sheet resistance, high flexibility and high transparency [1]. Recently, high out-of-plane resistance of graphene has been utilized to reduce the operating current in metal oxide based resistive memories (RRAMs) [2]. However, this report also indicates that the high out-of-plane resistance of graphene contributes ...Show More

Forming-free resistive switching with low current operation in graphene-insulator-graphene structures

Bhaswar Chakrabarti;Tania Roy;Corey A. Joiner;Zohreh R. Hesabi;Eric M. Vogel

Year: 2013 | Conference Paper |

Random telegraph noise (RTN) in scaled RRAM devices

D. Veksler;G. Bersuker;L. Vandelli;A. Padovani;L. Larcher;A. Muraviev;B. Chakrabarti;E. Vogel;D. C. Gilmer;P. D. Kirsch

2013 IEEE International Reliability Physics Symposium (IRPS)
Year: 2013 | Conference Paper |
Cited by: Papers (67)
The random telegraph noise (RTN) related read instability in resistive random access memory (RRAM) is evaluated by employing the RTN peak-to-peak (P-p) amplitude as a figure of merit (FoM). Variation of the FoM value over multiple set/reset cycles is found to follow the log-normal distribution. P-p decreases with the reduction of the read current, which allows scaling of the RRAM operating current...Show More

Random telegraph noise (RTN) in scaled RRAM devices

D. Veksler;G. Bersuker;L. Vandelli;A. Padovani;L. Larcher;A. Muraviev;B. Chakrabarti;E. Vogel;D. C. Gilmer;P. D. Kirsch

Year: 2013 | Conference Paper |

Multilevel Switching in Forming-Free Resistive Memory Devices With Atomic Layer Deposited ${\rm HfTiO}_{x}$ Nanolaminate

Bhaswar Chakrabarti;Rohit V. Galatage;Eric M. Vogel

IEEE Electron Device Letters
Year: 2013 | Volume: 34, Issue: 7 | Journal Article |
Cited by: Papers (38)
We report multilevel switching in forming-free resistive random access memories (RRAMs) with atomic layer deposited HfTiOx nanolaminate (5 nm) as the dielectric. The devices are fabricated using materials and processes compatible with complementary metal-oxide-semiconductor fabrication, including atomic layer deposition for the mixed dielectric structure. The devices switch between ON/OFF states a...Show More

Multilevel Switching in Forming-Free Resistive Memory Devices With Atomic Layer Deposited ${\rm HfTiO}_{x}$ Nanolaminate

Bhaswar Chakrabarti;Rohit V. Galatage;Eric M. Vogel

Year: 2013 | Volume: 34, Issue: 7 | Journal Article |

Low-Temperature Fabrication of Spiking Soma Circuits Using Nanocrystalline-Silicon TFTs

Anand Subramaniam;Kurtis D. Cantley;Harvey J. Stiegler;Richard A. Chapman;Eric M. Vogel

IEEE Transactions on Neural Networks and Learning Systems
Year: 2013 | Volume: 24, Issue: 9 | Journal Article |
Cited by: Papers (2)
Spiking neuron circuits consisting of ambipolar nanocrystalline-silicon (nc-Si) thin-film transistors (TFTs) have been fabricated using low temperature processing conditions (maximum of 250 °C) that allow the use of flexible substrates. These circuits display behaviors commonly observed in biological neurons such as millisecond spike duration, nonlinear frequency-current relationship, and spike fr...Show More

Low-Temperature Fabrication of Spiking Soma Circuits Using Nanocrystalline-Silicon TFTs

Anand Subramaniam;Kurtis D. Cantley;Harvey J. Stiegler;Richard A. Chapman;Eric M. Vogel

Year: 2013 | Volume: 24, Issue: 9 | Journal Article |

Spike-Timing-Dependent Plasticity Using Biologically Realistic Action Potentials and Low-Temperature Materials

Anand Subramaniam;Kurtis D. Cantley;Gennadi Bersuker;David C. Gilmer;Eric M. Vogel

IEEE Transactions on Nanotechnology
Year: 2013 | Volume: 12, Issue: 3 | Journal Article |
Spike-timing-dependent plasticity (STDP) is a fundamental learning rule observed in biological synapses that is desirable to replicate in neuromorphic electronic systems. Nanocrystalline-silicon thin film transistors (TFTs) and memristors can be fabricated at low temperatures, and are suitable for use in such systems because of their potential for high density, 3-D integration. In this paper, a co...Show More

Spike-Timing-Dependent Plasticity Using Biologically Realistic Action Potentials and Low-Temperature Materials

Anand Subramaniam;Kurtis D. Cantley;Gennadi Bersuker;David C. Gilmer;Eric M. Vogel

Year: 2013 | Volume: 12, Issue: 3 | Journal Article |

Methodology for the statistical evaluation of the effect of random telegraph noise (RTN) on RRAM characteristics

D. Veksler;G. Bersuker;B. Chakrabarti;E. Vogel;S. Deora;K. Matthews;D. C. Gilmer;H.-F. Li;S. Gausepohl;P. D. Kirsch

2012 International Electron Devices Meeting
Year: 2012 | Conference Paper |
Cited by: Papers (40)
We introduce a figure of merit (FoM) to quantify RRAM read current instability, a complex multi-level RTN-like signal, generally observed in read current. Log(FoM) follows a normal statistical distribution describing the probability of occurrence of a read current fluctuation of a given amplitude. We demonstrate that peak-to-peak RTN amplitude decreases with the reduction of the read current that ...Show More

Methodology for the statistical evaluation of the effect of random telegraph noise (RTN) on RRAM characteristics

D. Veksler;G. Bersuker;B. Chakrabarti;E. Vogel;S. Deora;K. Matthews;D. C. Gilmer;H.-F. Li;S. Gausepohl;P. D. Kirsch

Year: 2012 | Conference Paper |

Noise effects in field-effect transistor biological sensor detection circuits

Kurtis D. Cantley;Poornika G. Fernandes;Mingyue Zhao;Harvey J. Stiegler;Richard A. Chapman;Eric M. Vogel

2012 IEEE 55th International Midwest Symposium on Circuits and Systems (MWSCAS)
Year: 2012 | Conference Paper |
Cited by: Papers (2)
Affinity-based biological sensor field-effect transistors (BioFETs) exhibit a large amount of noise in their drain current under constant bias. In this work, we use SPICE to simulate the effect of sensor noise on a differential pair amplifier detection circuit. This is accomplished by the generation of a realistic noise signal with 1/f power spectrum which is applied to the back gate and reference...Show More

Noise effects in field-effect transistor biological sensor detection circuits

Kurtis D. Cantley;Poornika G. Fernandes;Mingyue Zhao;Harvey J. Stiegler;Richard A. Chapman;Eric M. Vogel

Year: 2012 | Conference Paper |

Reduced NiPtSi Schottky barriers by controlling interface composition and new materials incorporation

Christopher Hinkle;Jack Chan;Javier Mendez;Richard Chapman;Eric Vogel;Deborah Riley;Amitabh Jain;S. C. Song;K. Y. Lim;James Blatchford;Judy Shaw

2012 12th International Workshop on Junction Technology
Year: 2012 | Conference Paper |
Cited by: Papers (1)
Contact resistance (Rc) contributes over 65% of the total source to drain series resistance in <; 32 nm CMOS technologies. In this work, reduction of Rc is achieved by lowering the SBH through the incorporation of new materials into NiPtSi. The impact of implanted elemental species as well as alloyed low work function metals is discussed. As diffusion and subsequent interface composition is highly...Show More

Reduced NiPtSi Schottky barriers by controlling interface composition and new materials incorporation

Christopher Hinkle;Jack Chan;Javier Mendez;Richard Chapman;Eric Vogel;Deborah Riley;Amitabh Jain;S. C. Song;K. Y. Lim;James Blatchford;Judy Shaw

Year: 2012 | Conference Paper |

Neural Learning Circuits Utilizing Nano-Crystalline Silicon Transistors and Memristors

Kurtis D. Cantley;Anand Subramaniam;Harvey J. Stiegler;Richard A. Chapman;Eric M. Vogel

IEEE Transactions on Neural Networks and Learning Systems
Year: 2012 | Volume: 23, Issue: 4 | Journal Article |
Cited by: Papers (112)
Properties of neural circuits are demonstrated via SPICE simulations and their applications are discussed. The neuron and synapse subcircuits include ambipolar nano-crystalline silicon transistor and memristor device models based on measured data. Neuron circuit characteristics and the Hebbian synaptic learning rule are shown to be similar to biology. Changes in the average firing rate learning ru...Show More

Neural Learning Circuits Utilizing Nano-Crystalline Silicon Transistors and Memristors

Kurtis D. Cantley;Anand Subramaniam;Harvey J. Stiegler;Richard A. Chapman;Eric M. Vogel

Year: 2012 | Volume: 23, Issue: 4 | Journal Article |

Effect of Back-Gate Biasing on Floating Electrolytes in Silicon-on-Insulator-Based Nanoribbon Sensors

P. G. Fernandes;R. A. Chapman;O. Seitz;H. J. Stiegler;H.-C. Wen;Y. J. Chabal;E. M. Vogel

IEEE Electron Device Letters
Year: 2012 | Volume: 33, Issue: 3 | Journal Article |
Silicon-on-insulator (SOI) field-effect-based sensors are often biased using a back substrate gate with biological/electrolytic solutions placed over the top sensor channel. For electrically floating electrolytes in contact with the SOI-buried oxide, we demonstrate that the electrolyte voltage is capacitively coupled to the applied back-gate bias resulting in a dual-gated sensor. Measured electrol...Show More

Effect of Back-Gate Biasing on Floating Electrolytes in Silicon-on-Insulator-Based Nanoribbon Sensors

P. G. Fernandes;R. A. Chapman;O. Seitz;H. J. Stiegler;H.-C. Wen;Y. J. Chabal;E. M. Vogel

Year: 2012 | Volume: 33, Issue: 3 | Journal Article |

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