Loading [MathJax]/extensions/MathZoom.js
D. Veksler - IEEE Xplore Author Profile
Subscribe
ADVANCED SEARCH

Author details

< Back

D. Veksler

Also published under: Dmitry Veksler, Dmitry B. Veksler, D. B. Veksler

Publications
70
Citations
749
Publications by Year
20042023
Co-Authors:
Show All Co-Authors (232)
Image of author D. Veksler

D. Veksler

Also published under: Dmitry Veksler, Dmitry B. Veksler, D. B. Veksler

Affiliation

M2D Solutions
Austin
TX, USA

Publication Topics

Biography

A. Koudymov, D. Veksler and M. S. Shur are with ECSE and Broadband Center, Rensselaer Polytechnic Institute, CII9017, 110 8th Street, Troy, NY, USA(Based on document published on 8 August 2007).
Publications
70
Citations
749
Publications by Year
20042023
Co-Authors:
Show All Co-Authors (232)
Author's Published Works

Showing 1-25 of 70 results

  • Sort

Filter Results

Show

Sort By

Results

Signal duration sensitive degradation in scaled devices

G. Bersuker;E. Tang;D. Veksler

2023 IEEE International Reliability Physics Symposium (IRPS)
Year: 2023 | Conference Paper |
Defect generation controlling device degradation is found to be highly sensitive to the signal duration in circuitry-relevant operation frequencies (GHz). Stressing devices in ns-time range reveals greatly extended device lifetimes compared to conventional evaluation conditions. The role of energy generation/dissipation in scaled devices is discussed.Show More

Signal duration sensitive degradation in scaled devices

G. Bersuker;E. Tang;D. Veksler

Year: 2023 | Conference Paper |

Experimental demonstration of sub-nanosecond switching in 2D hexagonal Boron Nitride resistive memory devices

SS Teja Nibhanupudi;Dmitry Veksler;Anupam Roy;Matthew Coupin;Kevin C. Matthews;Jamie Warner;Gennadi Bersuker;Jaydeep P. Kulkarni;Sanjay K. Banerjee

2022 Device Research Conference (DRC)
Year: 2022 | Conference Paper |
Cited by: Papers (2)
Resistive switching in 2D materials such as hexagonal boron nitride (hBN) and Transition Metal Dichalcogenides (TMDs) have been demonstrated recently [1]–[3]. These memory devices with an ultra-thin switching layer have the potential to achieve low operating voltages, low variability and are also suitable for flexible electronic applications [4]. Here we report the first experimental observation o...Show More

Experimental demonstration of sub-nanosecond switching in 2D hexagonal Boron Nitride resistive memory devices

SS Teja Nibhanupudi;Dmitry Veksler;Anupam Roy;Matthew Coupin;Kevin C. Matthews;Jamie Warner;Gennadi Bersuker;Jaydeep P. Kulkarni;Sanjay K. Banerjee

Year: 2022 | Conference Paper |

Combining measurements and modeling/simulations analysis to assess carbon nanotube memory cell characteristics

J. Farmer;D. Veksler;E. Tang;G. Bersuker;D. Z. Gao;A.-M. El-Sayed;T. Durrant;A. Shluger;T. Rueckes;L. Cleveland;H. Luan;R. Sen

2022 IEEE International Reliability Physics Symposium (IRPS)
Year: 2022 | Conference Paper |
Cited by: Papers (1)
A simulation package for CNT memory cells is developed, based on computational modeling of both the mesoscopic structure of carbon nanotube films and the electrical conductivity of inter-CNT contacts. The developed package enables the modeling of various electrical measurements and identification of a range of operation conditions delivering desirable device characteristics. This approach opens th...Show More

Combining measurements and modeling/simulations analysis to assess carbon nanotube memory cell characteristics

J. Farmer;D. Veksler;E. Tang;G. Bersuker;D. Z. Gao;A.-M. El-Sayed;T. Durrant;A. Shluger;T. Rueckes;L. Cleveland;H. Luan;R. Sen

Year: 2022 | Conference Paper |

Mitigating switching variability in carbon nanotube memristors

J. Farmer;W. Whitehead;A. Hall;D. Veksler;G. Bersuker;D. Gao;Al-Moatasem El-Sayed;T. Durrant;A. Shluger;T. Rueckes;L. Cleveland;H. Luan;R. Sen

2021 IEEE International Reliability Physics Symposium (IRPS)
Year: 2021 | Conference Paper |
Cited by: Papers (1)
Root-cause of instability in carbon nanotubes memristors is analyzed employing ultra-short pulse technique in combination with atomic-level material modeling. Separating various factors affecting switching operations allowed to identify structural features and operational conditions leading to improved cell characteristics.Show More

Mitigating switching variability in carbon nanotube memristors

J. Farmer;W. Whitehead;A. Hall;D. Veksler;G. Bersuker;D. Gao;Al-Moatasem El-Sayed;T. Durrant;A. Shluger;T. Rueckes;L. Cleveland;H. Luan;R. Sen

Year: 2021 | Conference Paper |

Memory update characteristics of carbon nanotube memristors (NRAM®) under circuitry-relevant operation conditions

D. Veksler;G. Bersuker;A. W. Bushmaker;M. Mason;P. R. Shrestha;K. P. Cheung;J. P. Campbell;T. Rueckes;L. Cleveland;H. Luan;D. C. Gilmer

2020 IEEE International Reliability Physics Symposium (IRPS)
Year: 2020 | Conference Paper |
Carbon nanotubes (CNT) resistance-change memory devices were assessed for neuromorphic applications under high frequency use conditions by employing the ultra-short (100 ps -10 ns) voltage pulse technique. Under properly selected operation conditions, CNTs demonstrate switching characteristics promising for various NN implementations.Show More

Memory update characteristics of carbon nanotube memristors (NRAM®) under circuitry-relevant operation conditions

D. Veksler;G. Bersuker;A. W. Bushmaker;M. Mason;P. R. Shrestha;K. P. Cheung;J. P. Campbell;T. Rueckes;L. Cleveland;H. Luan;D. C. Gilmer

Year: 2020 | Conference Paper |

Switching Variability Factors in Compliance-Free Metal Oxide RRAM

D. Veksler;G. Bersuker;A. W. Bushmaker;P. R. Shrestha;K. P. Cheung;J. P. Campbell

2019 IEEE International Reliability Physics Symposium (IRPS)
Year: 2019 | Conference Paper |
Cited by: Papers (3)
Switching variability in polycrystalline compliance-free HfO2-based 1R RRAM is evaluated employing ultra-fast low voltage pulse approach. Changes in filament conductivity are linked to the variations of energy consumed in a switching process. This study indicates that variability is reduced (suppressed) in more resistive filaments.Show More

Switching Variability Factors in Compliance-Free Metal Oxide RRAM

D. Veksler;G. Bersuker;A. W. Bushmaker;P. R. Shrestha;K. P. Cheung;J. P. Campbell

Year: 2019 | Conference Paper |

Total Ionizing Dose Effects on TiN/Ti/HfO2/TiN Resistive Random Access Memory Studied via Electrically Detected Magnetic Resonance

D. J. McCrory;P. M. Lenahan;D. M. Nminibapiel;D. Veksler;J. T. Ryan;J. P. Campbell

IEEE Transactions on Nuclear Science
Year: 2018 | Volume: 65, Issue: 5 | Journal Article |
Cited by: Papers (9)
We observe a gamma-irradiation-induced change in electrically detected magnetic resonance (EDMR) in TiN/Ti/HfO2/TiN resistive random access memory (RRAM). EDMR measurements exclusively detect electrically active defects, which are directly involved in the transport mechanisms within these devices. The EDMR response has an isotropic g value of 2.001 ± 0.0003. The response increases dramatically wit...Show More

Total Ionizing Dose Effects on TiN/Ti/HfO2/TiN Resistive Random Access Memory Studied via Electrically Detected Magnetic Resonance

D. J. McCrory;P. M. Lenahan;D. M. Nminibapiel;D. Veksler;J. T. Ryan;J. P. Campbell

Year: 2018 | Volume: 65, Issue: 5 | Journal Article |

Analysis and Control of RRAM Overshoot Current

Pragya R. Shrestha;David M. Nminibapiel;Jason P. Campbell;Jason T. Ryan;Dmitry Veksler;Helmut Baumgart;Kin P. Cheung

IEEE Transactions on Electron Devices
Year: 2018 | Volume: 65, Issue: 1 | Journal Article |
Cited by: Papers (12)
To combat the large variability problem in resistive random access memory, current compliance elements are commonly used to limit the in-rush current during the forming operation. Regardless of the compliance element (1R-1R or 1T-1R), some degree of current overshoot is unavoidable. The peak value of the overshoot current is often used as a predictive metric of the filament characteristics and is ...Show More

Analysis and Control of RRAM Overshoot Current

Pragya R. Shrestha;David M. Nminibapiel;Jason P. Campbell;Jason T. Ryan;Dmitry Veksler;Helmut Baumgart;Kin P. Cheung

Year: 2018 | Volume: 65, Issue: 1 | Journal Article |

Local Field Effect on Charge-Capture/Emission Dynamics

Kin P. Cheung;Dmitry Veksler;Jason P. Campbell

IEEE Transactions on Electron Devices
Year: 2017 | Volume: 64, Issue: 12 | Journal Article |
Cited by: Papers (3)
Charge-capture/emission is ubiquitous in electron devices. Its dynamics often play critical roles in device operation and reliability. Treatment of this basic process is found in many text books and is considered well understood. As in many electron device models, the individuality of immobile charge is commonly replaced with the average quantity of charge density. This has worked remarkably well ...Show More

Local Field Effect on Charge-Capture/Emission Dynamics

Kin P. Cheung;Dmitry Veksler;Jason P. Campbell

Year: 2017 | Volume: 64, Issue: 12 | Journal Article |

Comprehensive Capacitance–Voltage Simulation and Extraction Tool Including Quantum Effects for High-k on SixGe1−x and InxGa1−xAs: Part I—Model Description and Validation

Sarkar R. M. Anwar;William G. Vandenberghe;Gennadi Bersuker;Dmitry Veksler;Giovanni Verzellesi;Luca Morassi;Rohit V. Galatage;Sumit Jha;Creighton Buie;Adam T. Barton;Eric M. Vogel;Christopher L. Hinkle

IEEE Transactions on Electron Devices
Year: 2017 | Volume: 64, Issue: 9 | Journal Article |
Cited by: Papers (3)
High-mobility alternative channel materials to silicon are critical to the continued scaling of MOS devices. The analysis of capacitance–voltage (C–V) measurements on these new materials with high-k gate dielectrics is a critical technique to determine many important gate-stack parameters. While there are very useful C–V analysis tools available to the community, these tools are all limited in the...Show More

Comprehensive Capacitance–Voltage Simulation and Extraction Tool Including Quantum Effects for High-k on SixGe1−x and InxGa1−xAs: Part I—Model Description and Validation

Sarkar R. M. Anwar;William G. Vandenberghe;Gennadi Bersuker;Dmitry Veksler;Giovanni Verzellesi;Luca Morassi;Rohit V. Galatage;Sumit Jha;Creighton Buie;Adam T. Barton;Eric M. Vogel;Christopher L. Hinkle

Year: 2017 | Volume: 64, Issue: 9 | Journal Article |

Impact of RRAM Read Fluctuations on the Program-Verify Approach

David M. Nminibapiel;Dmitry Veksler;Pragya R. Shrestha;Jason P. Campbell;Jason T. Ryan;Helmut Baumgart;Kin P. Cheung

IEEE Electron Device Letters
Year: 2017 | Volume: 38, Issue: 6 | Journal Article |
Cited by: Papers (16)
The stochastic nature of the conductive filaments in oxide-based resistive memory resistive random access memory (RRAM) represents a sizeable impediment to commercialization. As such, program-verify methodologies are highly alluring. However, it was recently shown that the program-verify methods are unworkable due to strong resistance state relaxation after SET/RESET programming. In this letter, w...Show More

Impact of RRAM Read Fluctuations on the Program-Verify Approach

David M. Nminibapiel;Dmitry Veksler;Pragya R. Shrestha;Jason P. Campbell;Jason T. Ryan;Helmut Baumgart;Kin P. Cheung

Year: 2017 | Volume: 38, Issue: 6 | Journal Article |

Pulsed I-V on TFETs: Modeling and Measurements

Quentin Smets;Anne Verhulst;Ji-Hong Kim;Jason P. Campbell;David Nminibapiel;Dmitry Veksler;Pragya Shrestha;Rahul Pandey;Eddy Simoen;David Gundlach;Curt Richter;Kin P. Cheung;Suman Datta;Anda Mocuta;Nadine Collaert;Aaron V.-Y. Thean;Marc M. Heyns

IEEE Transactions on Electron Devices
Year: 2017 | Volume: 64, Issue: 4 | Journal Article |
Cited by: Papers (5)
Most experimental reports of tunneling field-effect transistors show defect-related performance degradation. Charging of oxide traps causes Fermi-level pinning, and Shockley-Read-Hall (SRH)/trap-assisted tunneling (TAT) cause unwanted leakage current. In this paper, we study these degradation mechanisms using the pulsed I-V technique. Our simulations show pulsed I-V can fully suppress oxide trap c...Show More

Pulsed I-V on TFETs: Modeling and Measurements

Quentin Smets;Anne Verhulst;Ji-Hong Kim;Jason P. Campbell;David Nminibapiel;Dmitry Veksler;Pragya Shrestha;Rahul Pandey;Eddy Simoen;David Gundlach;Curt Richter;Kin P. Cheung;Suman Datta;Anda Mocuta;Nadine Collaert;Aaron V.-Y. Thean;Marc M. Heyns

Year: 2017 | Volume: 64, Issue: 4 | Journal Article |

Characteristics of Resistive Memory Read Fluctuations in Endurance Cycling

David M. Nminibapiel;Dmitry Veksler;Pragya R. Shrestha;Ji-Hong Kim;Jason P. Campbell;Jason T. Ryan;Helmut Baumgart;Kin P. Cheung

IEEE Electron Device Letters
Year: 2017 | Volume: 38, Issue: 3 | Journal Article |
Cited by: Papers (17)
We report on new fluctuation dynamics of the high resistance state of Hafnia-based RRAM devices after RESET. We observe that large amplitude fluctuations occur more frequently immediately after programming and their frequency of occurrence decays in the tens of microseconds. The fluctuation amplitude, on the other hand, does not decay noticeably over the entire millisecond read time. While post-pr...Show More

Characteristics of Resistive Memory Read Fluctuations in Endurance Cycling

David M. Nminibapiel;Dmitry Veksler;Pragya R. Shrestha;Ji-Hong Kim;Jason P. Campbell;Jason T. Ryan;Helmut Baumgart;Kin P. Cheung

Year: 2017 | Volume: 38, Issue: 3 | Journal Article |

InGaAs Inversion Layer Mobility and Interface Trap Density From Gated Hall Measurements

T. Chidambaram;D. Veksler;S. Madisetti;M. Yakimov;V. Tokranov;S. Oktyabrsky

IEEE Electron Device Letters
Year: 2016 | Volume: 37, Issue: 12 | Journal Article |
Cited by: Papers (4)
In this letter, we use gated Hall method for direct measurement of free carrier density and electron mobility in inversion InGaAs MOSFET channels. At room temperature, the highest Hall mobility of 1800 cm2/Vs is observed at electron density in the channel $\approx 1\times 10^{12}$ cm $^{-2}$ . A comparison with mobility values estimated from transistor characteristics reveals a significant under...Show More

InGaAs Inversion Layer Mobility and Interface Trap Density From Gated Hall Measurements

T. Chidambaram;D. Veksler;S. Madisetti;M. Yakimov;V. Tokranov;S. Oktyabrsky

Year: 2016 | Volume: 37, Issue: 12 | Journal Article |

Device-level jitter as a probe of ultrafast traps in high-k MOSFETs

D. Veksler;J. P. Campbell;J. Zhong;H. Zhu;C. Zhao;K. P. Cheung

2016 IEEE International Reliability Physics Symposium (IRPS)
Year: 2016 | Conference Paper |
A methodology for the evaluation of ultra-fast interfacial traps, using jitter measurements as a probe, is developed. This methodology is applied to study the effect of PBTI stress on the density of ultra-fast electron traps (with 500 ps to 5 ns characteristic capture/emission times) in a high-k/Si nMOSFET. It is shown, that in spite of an observed increase of timing jitter after PBTI stress, this...Show More

Device-level jitter as a probe of ultrafast traps in high-k MOSFETs

D. Veksler;J. P. Campbell;J. Zhong;H. Zhu;C. Zhao;K. P. Cheung

Year: 2016 | Conference Paper |

In-Line-Test of Variability and Bit-Error-Rate of HfOx-Based Resistive Memory

B. L. Ji;H. Li;Q. Ye;S. Gausepohl;S. Deora;D. Veksler;S. Vivekanand;H. Chong;H. Stamper;T. Burroughs;C. Johnson;M. Smalley;S. Bennett;V. Kaushik;J. Piccirillo;M. Rodgers;M. Passaro;M. Liehr

2015 IEEE International Memory Workshop (IMW)
Year: 2015 | Conference Paper |
Cited by: Papers (6)
Spatial and temporal variability of HfOx-based resistive random access memory (RRAM) are investigated for manufacturing and product designs. Manufacturing variability is characterized at different levels including lots, wafers, and chips. Bit-error-rate (BER) is proposed as a holistic parameter for the write cycle resistance statistics. Using the electrical in-line-test cycle data, a method is dev...Show More

In-Line-Test of Variability and Bit-Error-Rate of HfOx-Based Resistive Memory

B. L. Ji;H. Li;Q. Ye;S. Gausepohl;S. Deora;D. Veksler;S. Vivekanand;H. Chong;H. Stamper;T. Burroughs;C. Johnson;M. Smalley;S. Bennett;V. Kaushik;J. Piccirillo;M. Rodgers;M. Passaro;M. Liehr

Year: 2015 | Conference Paper |

Substrate and temperature influence on the trap density distribution in high-k III-V MOSFETs

G. Sereni;L. Vandelli;R. Cavicchioli;L. Larcher;D. Veksler;G. Bersuker

2015 IEEE International Reliability Physics Symposium
Year: 2015 | Conference Paper |
In this work we apply a new spectroscopic technique based on the simulation of capacitance and conductance measurements to investigate the defect density in high-κ/III-V MOSFETs. This technique exploits the simulation of C-V and G-V curves measured over a wide frequency range to extract the defect density map in the energy-position domain. The technique was used to investigate the role of the subs...Show More

Substrate and temperature influence on the trap density distribution in high-k III-V MOSFETs

G. Sereni;L. Vandelli;R. Cavicchioli;L. Larcher;D. Veksler;G. Bersuker

Year: 2015 | Conference Paper |

Impact of H2 High-Pressure Annealing Onto InGaAs Quantum-Well Metal–Oxide–Semiconductor Field-Effect Transistors With Al2O3/HfO2 Gate-Stack

Tae-Woo Kim;Hyuk-Min Kwon;Seung Heon Shin;Chan-Soo Shin;Won-Kyu Park;Eddie Chiu;Manny Rivera;Jae Ik Lew;Dmitry Veksler;Tommaso Orzali;Dae-Hyun Kim

IEEE Electron Device Letters
Year: 2015 | Volume: 36, Issue: 7 | Journal Article |
Cited by: Papers (18)
We report on the impact of H2 high-pressure annealing (HPA) onto In0.7Ga0.3As MOSCAPs and quantum-well (QW) MOSFETs with Al2O3/HfO2 gate-stack. After HPA with process condition of 300°C, H2 ambient and pressure of 20 atm, we observed notable improvements of the capacitance-voltage (CV) characteristics in InGaAs MOSCAPs with Al2O3/HfO2 gate-stack, such as reduction of equivalent-oxide-thickness and...Show More

Impact of H2 High-Pressure Annealing Onto InGaAs Quantum-Well Metal–Oxide–Semiconductor Field-Effect Transistors With Al2O3/HfO2 Gate-Stack

Tae-Woo Kim;Hyuk-Min Kwon;Seung Heon Shin;Chan-Soo Shin;Won-Kyu Park;Eddie Chiu;Manny Rivera;Jae Ik Lew;Dmitry Veksler;Tommaso Orzali;Dae-Hyun Kim

Year: 2015 | Volume: 36, Issue: 7 | Journal Article |

Cross-correlation of electrical measurements via physics-based device simulations: Linking electrical and structural characteristics

A. Padovani;L. Larcher;L. Vandelli;M. Bertocchi;R. Cavicchioli;D. Veksler;G. Bersuker

Proceedings of the 2015 International Conference on Microelectronic Test Structures
Year: 2015 | Conference Paper |
We present a comprehensive simulation framework to interpret electrical characteristics (I-V, C-V, G-V, Charge-Pumping, BTI, CVS, RVS, ∶) commonly used for material characterization and reliability analysis of gate dielectric stacks in modern semiconductor devices. By accounting for the physical processes controlling charge transport through the dielectric (e.g. carrier trapping/de-trapping at the...Show More

Cross-correlation of electrical measurements via physics-based device simulations: Linking electrical and structural characteristics

A. Padovani;L. Larcher;L. Vandelli;M. Bertocchi;R. Cavicchioli;D. Veksler;G. Bersuker

Year: 2015 | Conference Paper |

A Unified Two-Band Model for Oxide Traps and Interface States in MOS Capacitors

Yuan Taur;Han-Ping Chen;Qian Xie;Jaesoo Ahn;Paul C. McIntyre;Dennis Lin;Abhitosh Vais;Dmitry Veksler

IEEE Transactions on Electron Devices
Year: 2015 | Volume: 62, Issue: 3 | Journal Article |
Cited by: Papers (7)
The distributed oxide trap model based on tunneling of carriers from the semiconductor surface is unified with the two-band Shockley-Read-Hall type of capture and emission model for interface states. The new model explains the often observed upturn of MOS conductance at high frequencies when biased in inversion. The unified two-band model fully covers both types of charge traps in all MOS bias reg...Show More

A Unified Two-Band Model for Oxide Traps and Interface States in MOS Capacitors

Yuan Taur;Han-Ping Chen;Qian Xie;Jaesoo Ahn;Paul C. McIntyre;Dennis Lin;Abhitosh Vais;Dmitry Veksler

Year: 2015 | Volume: 62, Issue: 3 | Journal Article |

A New Physical Method Based on $CV$ – $GV$ Simulations for the Characterization of the Interfacial and Bulk Defect Density in High- $k$ /III-V MOSFETs

Gabriele Sereni;Luca Vandelli;Dmitry Veksler;Luca Larcher

IEEE Transactions on Electron Devices
Year: 2015 | Volume: 62, Issue: 3 | Journal Article |
Cited by: Papers (17)
We propose a new defect characterization technique for high-k dielectric stacks in III-V MOSFETs. This technique allows extracting the defect density from the simulations of the C-V and G-V characteristics at different frequencies. The simulation is performed using a physical distributed compact model, where the trap-assisted capture and emission processes are described in the framework of the mul...Show More

A New Physical Method Based on $CV$ – $GV$ Simulations for the Characterization of the Interfacial and Bulk Defect Density in High- $k$ /III-V MOSFETs

Gabriele Sereni;Luca Vandelli;Dmitry Veksler;Luca Larcher

Year: 2015 | Volume: 62, Issue: 3 | Journal Article |

Defect density evaluation in a high-k MOSFET gate stack combining experimental and modeling methods

F. M. Puglisi;D. Veksler;K. Matthews;G. Bersuker;L. Larcher;A. Padovani;L. Vandelli;P. Pavan

2014 IEEE International Reliability Physics Symposium
Year: 2014 | Conference Paper |
We report on a methodology to assist fabrication process development using a case study of high thermal budget (HTB) and low thermal budget (LTB) fabrication flows for high-k/metal gate stacks in n-MOSFETs. This methodology is supported by simulations that self-consistently extract defect characteristics by simultaneously considering a set of electrical measurement data, specifically stress-induce...Show More

Defect density evaluation in a high-k MOSFET gate stack combining experimental and modeling methods

F. M. Puglisi;D. Veksler;K. Matthews;G. Bersuker;L. Larcher;A. Padovani;L. Vandelli;P. Pavan

Year: 2014 | Conference Paper |

Activation of electrically silent defects in the high-k gate stacks

D. Veksler;G. Bersuker;M. B. Watkins;A. Shluger

2014 IEEE International Reliability Physics Symposium
Year: 2014 | Conference Paper |
Cited by: Papers (1)
We investigate a possibility that changes of electrical characteristics of the nFETs high-k gate stacks under moderate voltage stresses are induced primarily by a reversible activation of the pre-existing defects rather than generation of new structural defects. These electrically silent pre-cursor defects become responsible for measured stress-induced instabilities of transistor parameters after ...Show More

Activation of electrically silent defects in the high-k gate stacks

D. Veksler;G. Bersuker;M. B. Watkins;A. Shluger

Year: 2014 | Conference Paper |

A new method for extracting interface state and border trap densities in high-k/III-V MOSFETs

G. Sereni;L. Vandelli;L. Larcher;L. Morassi;D. Veksler;G. Bersuker

2014 IEEE International Reliability Physics Symposium
Year: 2014 | Conference Paper |
Cited by: Papers (5)
Increased CMOS performance requires the introduction of alternative materials as substrate and gate dielectrics. III-V materials and in particular InGaAs can provide superior electron mobility compared to classic Si substrates. However, such substrate materials have non-optimal dielectric-semiconductor interfaces that can drastically reduce the device performance. Techniques for the extraction of ...Show More

A new method for extracting interface state and border trap densities in high-k/III-V MOSFETs

G. Sereni;L. Vandelli;L. Larcher;L. Morassi;D. Veksler;G. Bersuker

Year: 2014 | Conference Paper |

IEEE Account

Purchase Details

Profile Information

Need Help?

A not-for-profit organization, IEEE is the world's largest technical professional organization dedicated to advancing technology for the benefit of humanity.
© Copyright 2025 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.