Contact resistance (Rc) contributes over 65% of the total source to drain series resistance in <; 32 nm CMOS technologies. In this work, reduction of Rc is achieved by lowering the SBH through the incorporation of new materials into NiPtSi. The impact of implanted elemental species as well as alloyed low work function metals is discussed. As diffusion and subsequent interface composition is highly...Show More
Graphene is a possible candidate for post CMOS applications and mobility is a material characteristic that has been utilized to gauge the quality of the material[1]. Mobility of exfoliated graphene transferred on SiO2 has been reported to range from 2,000 to 25,000 cm2/V·s [1, 2]. The large variation is typically attributed to factors such as scattering by defects in the underlying substrate, resi...Show More
