Abstract:
Nonhydrogenated, n-channel, low-temperature-processed, single-crystal Si thin-film transistors (TFTs) have been fabricated on Si thin films prepared via sequential latera...Show MoreMetadata
Abstract:
Nonhydrogenated, n-channel, low-temperature-processed, single-crystal Si thin-film transistors (TFTs) have been fabricated on Si thin films prepared via sequential lateral solidification (SLS). The device characteristics of the resulting SLS TFTs exhibit properties and a level of performance that are superior to polycrystalline Si-based TFTs and are comparable to similar devices fabricated on silicon-on-insulator (SOI) substrates or bulk-Si wafers. We attribute these high-performance device characteristics to the absence of high-angle grain-boundaries within the active channel portion of the TFTs.
Published in: IEEE Electron Device Letters ( Volume: 19, Issue: 8, August 1998)
DOI: 10.1109/55.704408
Citations are not available for this document.
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