I. Introduction
Recently, low-temperature polycrystalline-silicon (poly-Si) thin-film transistors (TFTs) on glass have been of increasing interest because of their application to active-matrix organic light-emitting diodes with integrated drivers. The poly-Si on glass can be formed from an amorphous silicon (a-Si) precursor by crystallization techniques such as excimer-laser annealing (ELA), Ni metal-induced crystallization [1], [2], sequential lateral solidification [3], [4], aluminum-induced crystallization [5], and continuous-wave (CW)-laser annealing [6]. Among the various crystallization techniques, flash-lamp annealing (FLA) is the promising one to produce a high-quality poly-Si with super grains with less thermal damage to the glass substrate. FLA can fill the gap between the rapid thermal annealing (RTA) and ELA [7] and can be a high-throughput crystallization method of precursor a-Si because of its large-area light source with a suitable pulse duration less than 1 ms. On one hand, conventional RTA with duration on the order of seconds causes thermal damage to the glass substrate. On the other hand, the laser beam source for ELA with a duration of several tens of nanoseconds has a very small area [8]–[11]; therefore, many times of scanning are necessary for the crystallization of large-area a-Si. However, large-area crystallization with one shot can be possible by using FLA because of its large-area light source.