Abstract:
Nonhydrogenated, n-channel, low-temperature-processed, single-crystal Si thin-film transistors (TFTs) have been fabricated on Si thin films prepared via sequential latera...Show MoreMetadata
Abstract:
Nonhydrogenated, n-channel, low-temperature-processed, single-crystal Si thin-film transistors (TFTs) have been fabricated on Si thin films prepared via sequential lateral solidification (SLS). The device characteristics of the resulting SLS TFTs exhibit properties and a level of performance that are superior to polycrystalline Si-based TFTs and are comparable to similar devices fabricated on silicon-on-insulator (SOI) substrates or bulk-Si wafers. We attribute these high-performance device characteristics to the absence of high-angle grain-boundaries within the active channel portion of the TFTs.
Published in: IEEE Electron Device Letters ( Volume: 19, Issue: 8, August 1998)
DOI: 10.1109/55.704408
Program in Materials Science, Columbia University, New York, NY, USA
Lawrence Livemore National Laboratory, Livermore, CA, USA
Lawrence Livemore National Laboratory, Livermore, CA, USA
Program in Materials Science, Columbia University, New York, NY, USA
Program in Materials Science, Columbia University, New York, NY, USA
Program in Materials Science, Columbia University, New York, NY, USA
Program in Materials Science, Columbia University, New York, NY, USA
Lawrence Livemore National Laboratory, Livermore, CA, USA
Lawrence Livemore National Laboratory, Livermore, CA, USA
Program in Materials Science, Columbia University, New York, NY, USA
Program in Materials Science, Columbia University, New York, NY, USA
Program in Materials Science, Columbia University, New York, NY, USA
