Abstract:
Unintentional ion channeling in low energy ion implantation of boron intoMetadata
Abstract:
Unintentional ion channeling in low energy ion implantation of boron into
Published in: IEEE Electron Device Letters ( Volume: 4, Issue: 3, March 1983)
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1.
W. Fichtner, R. M. Levin and G. W. Taylor, "Experimental results on submicron-size p-channel MOSFET's", IEEE Electron Device Lett., vol. EDL-3, pp. 34-37, 1982.
2.
J. Lindhard, M. Scharff and H. E. Schiott, "Range concepts and heavy ion ranges", Mat. Fys. Medd. Dan. Vid. Selsk, vol. 33, pp. 1-44, 1963.
3.
V. G. K. Reddi and J. D. Sansbury, "Channeling and dechanneling of ion-implanted phosphorus in silicon", J. App. Phys., vol. 44, pp. 2951-2963, 1973.
4.
R. G. Wilson, H. L. Dunlap, D. M. Jamba and D. R. Myers, Angular sensitivity of controlled implanted doping profiles, 1978.
5.
M. Y. Tsai and B. G. Streetman, "Recrystallization of implanted amorphous silicon layers. I. Electrical properties of silicon implanted with BF2+ or Si+ + B +", J. Appl. Phys., vol. 50, pp. 183-187, 1979.
6.
W. K. Hofker, "Implantation of boron in silicon", Philips Res. Repts. Suppl., no. 8, 1975.
7.
H. Ryssel, G. Prinke, K. Haberger, K. Hoffmann, K. Müller and R. Henkelmann, "Range parameters of boron implanted into silicon", Appl. Phys., vol. 24, pp. 39-43, 1981.
8.
H. Ryssel, K. Haberger, K. Hoffmann, G. Prinke, R. Dümcke and A. Sachs, "Simulation of doping processes", IEEE Trans. Electron Devices, vol. ED-27, pp. 1484-1492, 1980.
9.
D. A. Antoniadis, S. E. Hansen and R. W. Dutton, SUPREM II—A program for IC process modeling and simulation, June 1978.
10.
J. F. Gibbons, "Ion implantation in semiconductors—Part I Range distribution theory and experiments", Proc. IEEE, vol. 56, pp. 295-319, 1968.
11.
F. H. Eisen, "Channeling of medium-mass ions through silicon", Canadian J. Phys., vol. 46, pp. 561-572, 1968.