Channeling effect of low energy boron implant in

Abstract:

Unintentional ion channeling in low energy ion implantation of boron into

Unintentional ion channeling in low energy ion implantation of boron into

Published in: IEEE Electron Device Letters ( Volume: 4, Issue: 3, March 1983)

Page(s): 59 - 62

Date of Publication: 09 August 2005

DOI: 10.1109/EDL.1983.25647

Department of Electrical Engineering and Computer Sciences, Electronics Research Laboratory, University of California, Berkeley, CA, USA

Department of Electrical Engineering and Computer Sciences, Electronics Research Laboratory, University of California, Berkeley, CA, USA

Department of Electrical Engineering and Computer Sciences, Electronics Research Laboratory, University of California, Berkeley, CA, USA

Department of Electrical Engineering and Computer Sciences, Electronics Research Laboratory, University of California, Berkeley, CA, USA

References is not available for this document.