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Journals & Magazines >IEEE Electron Device Letters >Volume: 4 Issue: 3

Channeling effect of low energy boron implant in

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Abstract:

Unintentional ion channeling in low energy ion implantation of boron into

Metadata

Abstract:

Unintentional ion channeling in low energy ion implantation of boron into

Published in: IEEE Electron Device Letters ( Volume: 4, Issue: 3, March 1983)

Page(s): 59 - 62

Date of Publication: 09 August 2005

ISSN Information:

DOI: 10.1109/EDL.1983.25647

Keywords assist with retrieval of results and provide a means to discovering other relevant content. Learn more.

IEEE Keywords
- Boron ,
- Implants ,
- Silicon ,
- CMOS technology ,
- Tail ,
- Annealing ,
- Capacitance-voltage characteristics ,
- Crystallization ,
- Amorphous materials ,
- Very large scale integration
Index Terms

Keywords assist with retrieval of results and provide a means to discovering other relevant content. Learn more.

IEEE Keywords
- Boron ,
- Implants ,
- Silicon ,
- CMOS technology ,
- Tail ,
- Annealing ,
- Capacitance-voltage characteristics ,
- Crystallization ,
- Amorphous materials ,
- Very large scale integration
Index Terms

References is not available for this document.