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T. M. Liu - IEEE Xplore Author Profile
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T. M. Liu

Publications
3
Citations
131
Publications by Year
19811984
Co-Authors:
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T. M. Liu

Affiliation

Department of Electrical Engineering and Computer Sciences
Electronic Research Laboratory
Berkeley, CA, USA

Publication Topics

Publications
3
Citations
131
Publications by Year
19811984
Co-Authors:
Author's Published Works

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Shallow boron junctions implanted in silicon through a surface oxide

T.M. Liu;W.G. Oldham

IEEE Electron Device Letters
Year: 1984 | Volume: 5, Issue: 8 | Journal Article |
Cited by: Papers (22)
The partial-ion-channeling tail in the atomic distribution profile of low-energy boron implants intoShow More

Shallow boron junctions implanted in silicon through a surface oxide

T.M. Liu;W.G. Oldham

Year: 1984 | Volume: 5, Issue: 8 | Journal Article |

Channeling effect of low energy boron implant in

T.M. Liu;W.G. Oldham

IEEE Electron Device Letters
Year: 1983 | Volume: 4, Issue: 3 | Journal Article |
Unintentional ion channeling in low energy ion implantation of boron intoShow More

Channeling effect of low energy boron implant in

T.M. Liu;W.G. Oldham

Year: 1983 | Volume: 4, Issue: 3 | Journal Article |

Sheet resistance-junction depth relationships in implanted arsenic diffusion

T.M. Liu;W.G. Oldham

IEEE Electron Device Letters
Year: 1981 | Volume: 2, Issue: 10 | Journal Article |
Cited by: Papers (9)
A design graph for arsenic diffusion has been constructed based on a Chebyshev polynomial approximation of the arsenic implantation/diffusion profile. Systematic experiments of arsenic implantation/ diffusion were done to support the design graph. The ultimate limitations of arsenic shallow junction design are defined.Show More

Sheet resistance-junction depth relationships in implanted arsenic diffusion

T.M. Liu;W.G. Oldham

Year: 1981 | Volume: 2, Issue: 10 | Journal Article |

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