Abstract:
Unintentional ion channeling in low energy ion implantation of boron intoMetadata
Abstract:
Unintentional ion channeling in low energy ion implantation of boron into
Published in: IEEE Electron Device Letters ( Volume: 4, Issue: 3, March 1983)
Citations are not available for this document.
Cites in Patents (2)Patent Links Provided by 1790 Analytics
1.
Nakahara, Moriya, "METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE USING AMORPHOUS SILICON AS A MASK"
Inventors:
Nakahara, Moriya
Abstract:
No Abstract
Assignee:
TOSHIBA CORP
Filing Date:
01 February 1986
Grant Date:
06 October 1987
Patent Classes:
Current U.S. Class:
438301000, 148DIG061, 148DIG082, 257408000, 257412000, 257754000, 257E21034, 257E21038, 257E21316, 257E29063, 257E29255, 438305000, 438306000, 438528000, 438585000
Current International Class:
H01L0212650000, H01L0213080000
2.
Mikami, Hitoshi Patent Div. K.K. Toshiba; Fukuda, Katsuyoshi Patent Div. K.K. Toshiba; Yasuami, Shigeru Patent Div. K.K. Toshiba, "Method of manufacturing a semiconductor device including an implantation step"
Inventors:
Mikami, Hitoshi Patent Div. K.K. Toshiba; Fukuda, Katsuyoshi Patent Div. K.K. Toshiba; Yasuami, Shigeru Patent Div. K.K. Toshiba
Abstract:
A method of manufacturing a semiconductor device involves the step of carrying out the implantation of an impurity in the main plane of a GaAs substrate (31) for the simultaneous formation of a plurality of regions (35, 36). When the angles formed with the perpendicular implantation of silicon ions in the GaAs main plane and the main orientations of GaAs substrate are expressed by the Euler angles ( , µ, ), then the crystal orientation is so prescribed as to satisfy the following conditions: 11° < < 33° 7° < µ < 24° 0°, thereby suppressing the occurrence of channeling in the implantation of ions in the substrate main plane and consequently ensuring substantially uniform impurity concentration in the plural regions.
Assignee:
KK TOSHIBA
Filing Date:
22 November 1985
Grant Date:
01 October 1986
Patent Classes:
Current International Class:
H01L0298120000, H01L0212650000, H01L0213380000, H01L0290400000, H01L0298000000
