Abstract:
We have investigated the effects of irradiation with 1.5 MeV electrons on the electrical characteristics of n-channel MOSFET's fabricated in zone-melting-recrystallized S...Show MoreMetadata
Abstract:
We have investigated the effects of irradiation with 1.5 MeV electrons on the electrical characteristics of n-channel MOSFET's fabricated in zone-melting-recrystallized Si films on SiO2-coated Si substrates. With a -15 V bias applied to the Si substrate during irradiation and device operation, the subthreshold leakage current remains below 0.2 pA/µm (channel width) for ionizing doses up to 106rad(Si). The negative substrate bias also reduces the shift of threshold voltage to less than 0.3 V for devices with 50 nm-thick gate oxide.
Published in: IEEE Electron Device Letters ( Volume: 3, Issue: 7, July 1982)
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA, USA
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA, USA
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA, USA
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA, USA
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA, USA
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA, USA
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA, USA
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA, USA