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Effects of ionizing radiation on n-channel MOSFET's fabricated in zone-melting-recrystallized Si films on SiO2 | IEEE Journals & Magazine | IEEE Xplore

Effects of ionizing radiation on n-channel MOSFET's fabricated in zone-melting-recrystallized Si films on SiO2


Abstract:

We have investigated the effects of irradiation with 1.5 MeV electrons on the electrical characteristics of n-channel MOSFET's fabricated in zone-melting-recrystallized S...Show More

Abstract:

We have investigated the effects of irradiation with 1.5 MeV electrons on the electrical characteristics of n-channel MOSFET's fabricated in zone-melting-recrystallized Si films on SiO2-coated Si substrates. With a -15 V bias applied to the Si substrate during irradiation and device operation, the subthreshold leakage current remains below 0.2 pA/µm (channel width) for ionizing doses up to 106rad(Si). The negative substrate bias also reduces the shift of threshold voltage to less than 0.3 V for devices with 50 nm-thick gate oxide.
Published in: IEEE Electron Device Letters ( Volume: 3, Issue: 7, July 1982)
Page(s): 195 - 197
Date of Publication: 09 August 2005

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