Loading [MathJax]/extensions/MathMenu.js
J. C. C. Fan - IEEE Xplore Author Profile

Showing 1-18 of 18 results

Filter Results

Show

Results

Two merged CMOS/bipolar technologies utilizing SOI structures have been demonstrated. In each case a single sequence of processing steps was used to fabricate fully isolated CMOS devices and vertical bipolar transistors on the same Si wafer. The CMOS devices were fabricated in a zone-melting-recrystallized SOI film, while the bipolar devices were fabricated either in the SOI film or in epitaxial S...Show More
GaAs MESFET's have been fabricated for the first time on monolithic GaAs/Si substrates. The substrates were prepared by growing single-crystal GaAs layers on Si wafers that had been coated with a Ge layer deposited by e-beam evaporation. The MESFET's exhibit good transistor characteristics, with maximum transconductance of 105 mS/mm for a gate length of 2.1 µm.Show More
The effects of ionizing radiation on SOI/CMOS devices fabricated in zone-melting-recrystallized Si films on SiO2-coated Si substrates have been investigated as a function of the negative bias applied to the substrate during irradiation and measurement. For these devices, which have a thin gate oxide 10 nm thick, the optimum substrate bias is - 5 V. For total doses up to 107rad(Si), with this bias ...Show More
Two merged CMOS/bipolar technologies utilizing SOI structures have been demonstrated. In each case a single sequence of processing steps was used to fabricate fully isolated CMOS devices and vertical bipolar transistors on the same Si wafer. The CMOS devices were fabricated in zone-melting-recrystallized SOI film, while the bipolar devices were fabricated either in the SOI film or in epitaxial Si ...Show More
A four-terminal device that can be operated either as a lateral n-p-n bipolar transistor or as a conventional n-channel MOSFET has been fabricated in silicon-on-insulator films prepared by graphite-strip-heater zone-melting recrystallization. Common-emitter current gain close to 20 and emitter-base breakdown voltage in excess of 10 V have been obtained for bipolar operation. As a MOSFET, the devic...Show More
The transport properties of zone-melting-recrystallized Si films on SiO2-coated Si substrates have been studied by the fabrication and characterization of thin-film resistors and n-channel MOSFET's. Subgrain boundaries, which are the predominant crystal defects in the films, have a relatively low trapping state density (7-8 × 1011cm-2) and low resistance. N-channel MOSFET's fabricated in the films...Show More
We have investigated the effects of irradiation with 1.5 MeV electrons on the electrical characteristics of n-channel MOSFET's fabricated in zone-melting-recrystallized Si films on SiO2-coated Si substrates. With a -15 V bias applied to the Si substrate during irradiation and device operation, the subthreshold leakage current remains below 0.2 pA/µm (channel width) for ionizing doses up to 106rad(...Show More
A CMOS test circuit chip containing six arrays of 360 to 533 parallel transistors, two 31-stage ring oscillators, and two inverter chains has been designed for evaluating SOI wafers prepared by using the graphite strip-heater technique for zone-melting recrystallization of poly-Si films on SiO2-coated Si substrates. One 2-in-diameter wafer has been evaluated in detail by testing all the circuits o...Show More
N-channel enhancement-mode MOSFETs have been fabricated in Si films prepared by zone-melting recrystallization of poly-Si deposited on SiO2- coated Si, fused quartz, and sapphire substrates. Because the films on fused quartz are under a large tensile stress, the devices in these films exhibit surface electron mobilities as high as 860 cm2/V-s, compared to 620 cm2/V-s reported for similar devices i...Show More
Solar cells with conversion efficiencies as high as 17% at AM1 have been fabricated from single-crystal 10-µm-thick GaAs films prepared by the CLEFT process. These cells are the first devices to employ CLEFT films. In making a cell, a GaAs film with an n+/p/p+shallow-homojunction structure is grown by vapor-phase epitaxy on a specially masked single-crystal GaAs substrate, then transferred to a gl...Show More
Solar cells with conversion efficiencies of 12% (AM1) have been fabricated from single-crystal GaAs epilayers grown by CVD on Ge-coated Si substrates. The cells utilize an n+/p/p+shallow-homo junction GaAs structure on a thin (<0.2 µm) epitaxial Ge layer. These solar cells are the first reported GaAs devices fabricated on Si substrates.Show More
By using an n+/p/p+structure, we have previously succeeded in fabricating GaAs solar cells on single-crystal GaAs and Ge substrates, with conversion efficiency of 21% at AM1. Three approaches are being used to lower the cost of such cells, preparation of large-grained Ge sheets on low-cost substrates, preparation of heteroepitaxial Ge films on inexpensive Si sheets, and preparation of thin single-...Show More