Fully oxygen precipitated (FOP) wafers can suppress slip generation during the STI process and maintain high substrate resistivity. Additional boron implantation can suppress the leakage current between the adjacent wells due to shallow Xj. No effect on MOSFET characteristics by this implantation was observed. The high resistivity substrate (HRS) can provide good ESD performance and suppress the p...Show More
A highly manufacturable embedded DRAM technology in SOI (Silicon On Insulator) has been developed for high-end SOC (System On a Chip). Partial etching of SOI/BOX (Buried OXide) layers and SEG (Selective Epitaxial Growth) processes simply transform an SOI wafer into a high quality SOI/bulk hybrid substrate wafer, which has both SOI substrate regions and bulk epitaxial Si regions. DRAM macros develo...Show More
