Author details
Hidemi Ishiuchi
Also published under: H. Ishiuchi
Affiliation
Center for Semiconductor Research and Development Center
Semiconductor Company
Toshiba Corporation, Yokohama, Japan
Biography
Hidemi Ishiuchi (M'86) received the B.S. and M.S. degrees in physics from the University of Tokyo, Tokyo, Japan, in 1978 and 1980, respectively.,Since 1980, he has been with Toshiba Corporation, Yokohama, Japan, where he has been working on DRAM development and is currently in the Semiconductor Research and Development Center, Semiconductor Company. From 1988 to 1989, he was with Stanford University, Stanford, CA, as a Visiting Scholar to study BiCMOS technologies. From 1993 to 1996, he was with IBM, East Fishkill, as a member of 256-Mb DRAM joint development project among IBM, Siemens, and Toshiba. Since 1996, he has been working on the development of advanced CMOS technologies including SOI MOSFETs, RF mixed signal CMOS technology, embedd... Author's Published Works