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C4ECC: Data Compression for Bandwidth Efficiency Under ECC Protection in GPUs
2025 International Conference on Electronics, Information, and Communication (ICEIC)
Year: 2025 | Conference Paper |
Modern GPUs using Graphics DDR DRAM rely on in-band Error Correcting Code (ECC) for memory protection, but this reduces effective bandwidth and increases latency. This paper introduces Data Compression for Bandwidth Efficiency under ECC Protection in GPUs, called C4ECC. C4ECC compresses 32B blocks to fit both data and redundancy within a single transfer between the GPU's Last Level Cache and devic...Show More
Gate-stack Optimization to Mitigate the Cylindrical Effect in Ferroelectric VNAND
Kwangsoo Kim;Suhwan Lim;Jongho Woo;Junyeong Lim;Sijung Yoo;Hyoseok Kim;Jaewoo Park;Haeyeon Jun;Seunghyun Kim;Myunghun Woo;Taeyoung Kim;Sanghyun Park;Hanseung Ko;Youngji Noh;Moonkang Choi;Jongyeon Baek;Jisung Kim;Kiheun Lee;Sam Park;Dukhyun Choe;Moonyoung Jung;Gukhyon Yon;Suhyeong Lee;Hyung Joon Kim;Kijoon Kim;Sungduk Hong;Kwangmin Park;Bong Jin Kuh;Wanki Kim;Daewon Ha;Sujin Ahn;Jaihyuk Song
2024 IEEE International Electron Devices Meeting (IEDM)
Year: 2024 | Conference Paper |
For the first time, we demonstrate an in-depth analysis on a novel multi-layered gate-interfacial-layer (G.IL) and high-k channel-interfacial-layer (Ch.IL) in metal-insulator-ferroelectric-insulator-silicon (MIFIS) gate stack FeFETs, using simulations and experimental validation. By exploring materials with varying energy barrier heights between the gate metal and G.IL to control the tunneling of ...Show More
Gate-stack Optimization to Mitigate the Cylindrical Effect in Ferroelectric VNAND
Kwangsoo Kim;Suhwan Lim;Jongho Woo;Junyeong Lim;Sijung Yoo;Hyoseok Kim;Jaewoo Park;Haeyeon Jun;Seunghyun Kim;Myunghun Woo;Taeyoung Kim;Sanghyun Park;Hanseung Ko;Youngji Noh;Moonkang Choi;Jongyeon Baek;Jisung Kim;Kiheun Lee;Sam Park;Dukhyun Choe;Moonyoung Jung;Gukhyon Yon;Suhyeong Lee;Hyung Joon Kim;Kijoon Kim;Sungduk Hong;Kwangmin Park;Bong Jin Kuh;Wanki Kim;Daewon Ha;Sujin Ahn;Jaihyuk Song
Year: 2024 | Conference Paper |
A Comprehensive Study of Read-After-Write-Delay for Ferroelectric VNAND
Ilho Myeong;Suhwan Lim;Taeyoung Kim;Sanghyun Park;Suseong Noh;Seung Min Lee;Jongho Woo;Hanseung Ko;Youngji Noh;Munkang Choi;Kiheun Lee;Sangwoo Han;Jongyeon Baek;Kijoon Kim;Dongjin Jung;Jisung Kim;Jaewoo Park;Seunghyun Kim;Hyoseok Kim;Ilyounz Yoon;Jaeho Kim;Kwangsoo Kim;Kwangmin Park;Bong Jin Kuh;Wanki Kim;Daewon Ha;Sujin Ahn;Jaihyuk Song;Sijung Yoo;Hyun Jae Lee;Duk-Hyun Choe;Seung-Geol Nam;Jinseong Heo
2024 IEEE International Reliability Physics Symposium (IRPS)
Year: 2024 | Conference Paper |
Cited by: Papers (3)
Read-After-Write-Delay (RAWD) is an important show-stopper (S.S) in ferroelectric based VNAND (Fe-VNAND) because the read speed is fundamentally limited by neutralization time of trapped charges between the ferroelectric layer and the interfacial oxide layer. We investigated the RAWD time (tRAWD) in Metal-Ferro-Insulator-Silicon (MFIS) gate stack and extended the analysis to Laminate-MFIS (LaMFIS)...Show More
A Comprehensive Study of Read-After-Write-Delay for Ferroelectric VNAND
Ilho Myeong;Suhwan Lim;Taeyoung Kim;Sanghyun Park;Suseong Noh;Seung Min Lee;Jongho Woo;Hanseung Ko;Youngji Noh;Munkang Choi;Kiheun Lee;Sangwoo Han;Jongyeon Baek;Kijoon Kim;Dongjin Jung;Jisung Kim;Jaewoo Park;Seunghyun Kim;Hyoseok Kim;Ilyounz Yoon;Jaeho Kim;Kwangsoo Kim;Kwangmin Park;Bong Jin Kuh;Wanki Kim;Daewon Ha;Sujin Ahn;Jaihyuk Song;Sijung Yoo;Hyun Jae Lee;Duk-Hyun Choe;Seung-Geol Nam;Jinseong Heo
Year: 2024 | Conference Paper |
Comprehensive Design Guidelines of Gate Stack for QLC and Highly Reliable Ferroelectric VNAND
Suhwan Lim;Taeyoung Kim;Ilho Myeong;Sanghyun Park;Suseong Noh;Seung Min Lee;Jongho Woo;Hanseung Ko;Youngji Noh;Moonkang Choi;Kiheun Lee;Sangwoo Han;Jongyeon Baek;Kijoon Kim;Juhyung Kim;Dongjin Jung;Kwangsoo Kim;Sijung Yoo;Hyun Jae Lee;Seung-Geol Nam;Ji-Sung Kim;Jaewoo Park;Chaeho Kim;Seunghyun Kim;Hyoseok Kim;Jinseong Heo;Kwangmin Park;Sanghun Jeon;Wanki Kim;Daewon Ha;Yu Gyun Shin;Jaihyuk Song
2023 International Electron Devices Meeting (IEDM)
Year: 2023 | Conference Paper |
Cited by: Papers (22)
For the first time, a comprehensive guideline is proposed for a gate stack design of ferroelectric vertical NAND (Fe-VNAND), based on in-depth analytical modeling and experiments. Based on the guideline, the metal-insulator-ferroelectric (FE)-insulator-silicon (MIFIS) gate stack has been demonstrated, showcasing its benefits in all three aspects of reliability (endurance, retention, and disturb ch...Show More
Comprehensive Design Guidelines of Gate Stack for QLC and Highly Reliable Ferroelectric VNAND
Suhwan Lim;Taeyoung Kim;Ilho Myeong;Sanghyun Park;Suseong Noh;Seung Min Lee;Jongho Woo;Hanseung Ko;Youngji Noh;Moonkang Choi;Kiheun Lee;Sangwoo Han;Jongyeon Baek;Kijoon Kim;Juhyung Kim;Dongjin Jung;Kwangsoo Kim;Sijung Yoo;Hyun Jae Lee;Seung-Geol Nam;Ji-Sung Kim;Jaewoo Park;Chaeho Kim;Seunghyun Kim;Hyoseok Kim;Jinseong Heo;Kwangmin Park;Sanghun Jeon;Wanki Kim;Daewon Ha;Yu Gyun Shin;Jaihyuk Song
Year: 2023 | Conference Paper |
Design and Fabrication of an Array of Touch Sensors for Robotic Applications
Tuan Luong;Sungwon Seo;Jeongmin Jeon;Chanyong Park;Myeongyun Doh;Sanghyun Park;Francisco Yumbla;Hyungpil Moon
2023 IEEE 19th International Conference on Automation Science and Engineering (CASE)
Year: 2023 | Conference Paper |
Artificial tactile sensing is important for many robotic manipulation tasks such as environment exploration and object grasping. This paper presents a multilayer flexible force tactile sensor array. The sensor consists of two conductive electrodes spaced by an intermediate layer made from a double-sided tape. The intermediate layer has different-sized circular holes at the junctions of the top and...Show More
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