Read-After-Write-Delay (RAWD) is an important show-stopper (S.S) in ferroelectric based VNAND (Fe-VNAND) because the read speed is fundamentally limited by neutralization time of trapped charges between the ferroelectric layer and the interfacial oxide layer. We investigated the RAWD time (tRAWD) in Metal-Ferro-Insulator-Silicon (MFIS) gate stack and extended the analysis to Laminate-MFIS (LaMFIS)...Show More
For the first time, a comprehensive guideline is proposed for a gate stack design of ferroelectric vertical NAND (Fe-VNAND), based on in-depth analytical modeling and experiments. Based on the guideline, the metal-insulator-ferroelectric (FE)-insulator-silicon (MIFIS) gate stack has been demonstrated, showcasing its benefits in all three aspects of reliability (endurance, retention, and disturb ch...Show More
