Abstract:
In this work, we demonstrate that the magnitude of flatband voltage (V/sub FB/) shift for ultrathin (<2 nm) silicon dioxide-silicon nitride (ON) gate stacks in MOSFET's d...Show MoreMetadata
Abstract:
In this work, we demonstrate that the magnitude of flatband voltage (V/sub FB/) shift for ultrathin (<2 nm) silicon dioxide-silicon nitride (ON) gate stacks in MOSFET's depends on the Fermi level position in the gate material. In addition, a fixed positive charge at the oxide-nitride interface was observed.
Published in: IEEE Electron Device Letters ( Volume: 21, Issue: 4, April 2000)
DOI: 10.1109/55.830971
Citations are not available for this document.
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Cites in Papers - IEEE (16)
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