Low voltage (1.2V) and high performance mobile DRAM device technology with dual poly-silicon gate using plasma nitrided gate oxide

The plasma nitrided gate oxide process has been developed and applied for mobile DRAM with low operating voltage. As a result, we confirm that plasma nitrided gate oxide can block the boron penetration in DRAM, which has a higher thermal budget than other devices. The nitrogen bonding status and profile are investigated to check the change in transistor and gate oxide characteristics.

Introduction

Recently, a distinct evolution trend for semiconductor is not only high density but also low operating voltage for mobile application. That means low operating voltage and high performance is needed for DRAM device also (Fig. 1). Fig. 1 The limitation of buried channel device and the requirement of mobile DRAM (high performance & low power consumption).