Processing math: 100%
Study of Multilevel High-Resistance States in HfOx-Based Resistive Switching Random Access Memory by Impedance Spectroscopy | IEEE Journals & Magazine | IEEE Xplore

Study of Multilevel High-Resistance States in HfOx-Based Resistive Switching Random Access Memory by Impedance Spectroscopy


Abstract:

Multilevel high-resistance states are achieved in TiN/HfOx/Pt resistive switching random access memory device by controlling the reset stop voltage. Impedance spectroscop...Show More

Abstract:

Multilevel high-resistance states are achieved in TiN/HfOx/Pt resistive switching random access memory device by controlling the reset stop voltage. Impedance spectroscopy is used to study the multilevel high-resistance states. It is shown that the high-resistance states can be described with an equivalent circuit consisting of the major components R_{s} , R , and C corresponding to the series resistance of the TiON interfacial layer, the equivalent parallel resistance, and capacitance of the leakage gap between the TiON layer and the residual conductive filament, respectively. These components show a strong dependence on the stop voltage, which can be explained in the framework of oxygen vacancy model and conductive filament concept. On the other hand, R is observed to decrease with dc bias, which can be attributed to the barrier lowering effect of the Coulombic trap well in the Poole–Frenkel emission model.
Published in: IEEE Transactions on Electron Devices ( Volume: 62, Issue: 8, August 2015)
Page(s): 2684 - 2688
Date of Publication: 07 July 2015

ISSN Information:

Funding Agency:

Citations are not available for this document.

I. Introduction

Resistive switching random access memory (RRAM) based on metal oxides, such as Al2O3, ZnO, NiOx, TiO2, and CuxO, is promising in the application of next-generation nonvolatile memory due to its simple structure, low-power consumption, high read/write speed, and good reliability [1]–[7]. Recently, multilevel resistance states in RRAM devices have been demonstrated to increase the storage density of the RRAM device [8], [9]. Until now, most of the studies were focused on the performance improvement and reliability of the multibit storage, there are relatively few studies on the mechanism for the multilevel resistance states of RRAM device. In this brief, impedance spectroscopy is employed to investigate multilevel high-resistance states in TiN/HfOx/Pt RRAM structure. Impedance spectroscopy is a powerful tool to examine the conduction properties of dielectric thin films, making it suitable for resistive switching property study [10], [11]. For the TiN/HfOx/Pt RRAM structure used in this brief, the multilevel high-resistance states may be attributed to the different rupture degrees of the conductive filament, which is hard to be detected by the microscopic techniques such as transmission electron microscopy and scanning probe microscopy. However, through the analysis of the impedance measurement, we have been able to obtain information about the redox reaction relating to the change of TiON interfacial layer and rupture of the conductive filament for different high-resistance states.

Cites in Papers - |

Cites in Papers - IEEE (3)

Select All
1.
Camilla La Torre, Alexander F. Zurhelle, Stephan Menzel, "Compact Modelling of Resistive Switching Devices based on the Valence Change Mechanism", 2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), pp.1-4, 2019.
2.
Cheng-Hsien Wu, Shih-Kai Lin, Chih-Hung Pan, Po-Hsun Chen, Wen-Yan Lin, Ting-Chang Chang, Tsung-Ming Tsai, You-Lin Xu, Chih-Cheng Shih, Yu-Shuo Lin, Wen-Chung Chen, Ming-Hui Wang, Sheng-Dong Zhang, Simon M. Sze, "Analyzing Electric Field Effect by Applying an Ultra-Short Time Pulse Condition in Hafnium Oxide-Based RRAM", IEEE Electron Device Letters, vol.39, no.8, pp.1163-1166, 2018.
3.
Po-Hsun Chen, Kuan-Chang Chang, Ting-Chang Chang, Tsung-Ming Tsai, Chih-Hung Pan, Tian-Jian Chu, Min-Chen Chen, Hui-Chun Huang, Ikai Lo, Jin-Cheng Zheng, Simon M. Sze, "Bulk Oxygen–Ion Storage in Indium–Tin–Oxide Electrode for Improved Performance of HfO2-Based Resistive Random Access Memory", IEEE Electron Device Letters, vol.37, no.3, pp.280-283, 2016.

Cites in Papers - Other Publishers (9)

1.
Taegi Kim, Doowon Lee, Myoungsu Chae, Kyeong-Heon Kim, Hee-Dong Kim, "Enhancing the Resistive Switching Properties of Transparent HfO2-Based Memristor Devices for Reliable Gasistor Applications", Sensors, vol.24, no.19, pp.6382, 2024.
2.
Ibtisam Ahmad, Doowon Lee, Myoungsu Chae, Taegi Kim, Mohsin Ali, Hee-Dong Kim, "Improved resistive switching characteristics observed in amorphous boron nitride-based RRAM device via oxygen doping: A study based on bulk and interface traps analysis", Materials Science in Semiconductor Processing, vol.184, pp.108805, 2024.
3.
Subaek Lee, Juri Kim, Sungjun Kim, "Self-aligned TiOx-based 3D vertical memristor for a high-density synaptic array", Frontiers of Physics, vol.19, no.6, 2024.
4.
Vikas Kumar Sahu, Amit Kumar Das, R.S. Ajimsha, Pankaj Misra, "On origin of resistive and capacitive contributions to impedance of memory states in Cu/TiO2/Pt RRAM devices by impedance spectroscopy", Ceramics International, 2022.
5.
Swathi S. P., Angappane S., "Digital and analog resistive switching in NiO-based memristor by electrode engineering", Japanese Journal of Applied Physics, vol.61, no.SM, pp.SM1009, 2022.
6.
Yun-Lai Zhu, Li-Heng Li, Chong Qiao, Yun-Tao Zeng, Jun-Hui Yuan, Xiao-Min Cheng, Xiang-Shui Miao, "Modulation of oxygen transport by incorporating Sb2Te3 layer in HfO2-based memristor", Applied Physics Letters, vol.119, no.19, pp.193503, 2021.
7.
Muhammad Ismail, Haider Abbas, Changhwan Choi, Sungjun Kim, "Stabilized and RESET-voltage controlled multi-level switching characteristics in ZrO2-based memristors by inserting a-ZTO interface layer", Journal of Alloys and Compounds, vol.835, pp.155256, 2020.
8.
Subhranu Samanta, Sheikh Ziaur Rahaman, Anisha Roy, Surajit Jana, Somsubhra Chakrabarti, Rajeswar Panja, Sourav Roy, Mrinmoy Dutta, Sreekanth Ginnaram, Amit Prakash, Siddheswar Maikap, Hsin-Ming Cheng, Ling-Na Tsai, Jian-Tai Qiu, Samit K. Ray, "Understanding of multi-level resistive switching mechanism in GeOx through redox reaction in H2O2/sarcosine prostate cancer biomarker detection", Scientific Reports, vol.7, no.1, 2017.
9.
Wei Hu, Lilan Zou, Chao Gao, Yongcai Guo, Dinghua Bao, "High speed and multi-level resistive switching capability of Ta2O5 thin films for nonvolatile memory application", Journal of Alloys and Compounds, 2016.

References

References is not available for this document.