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Study of Multilevel High-Resistance States in HfOx-Based Resistive Switching Random Access Memory by Impedance Spectroscopy | IEEE Journals & Magazine | IEEE Xplore

Study of Multilevel High-Resistance States in HfOx-Based Resistive Switching Random Access Memory by Impedance Spectroscopy


Abstract:

Multilevel high-resistance states are achieved in TiN/HfOx/Pt resistive switching random access memory device by controlling the reset stop voltage. Impedance spectroscop...Show More

Abstract:

Multilevel high-resistance states are achieved in TiN/HfOx/Pt resistive switching random access memory device by controlling the reset stop voltage. Impedance spectroscopy is used to study the multilevel high-resistance states. It is shown that the high-resistance states can be described with an equivalent circuit consisting of the major components R_{s} , R , and C corresponding to the series resistance of the TiON interfacial layer, the equivalent parallel resistance, and capacitance of the leakage gap between the TiON layer and the residual conductive filament, respectively. These components show a strong dependence on the stop voltage, which can be explained in the framework of oxygen vacancy model and conductive filament concept. On the other hand, R is observed to decrease with dc bias, which can be attributed to the barrier lowering effect of the Coulombic trap well in the Poole–Frenkel emission model.
Published in: IEEE Transactions on Electron Devices ( Volume: 62, Issue: 8, August 2015)
Page(s): 2684 - 2688
Date of Publication: 07 July 2015

ISSN Information:

Funding Agency:

Author image of H. K. Li
Institute of Microelectronics, Agency for Science, Technology and Research, Singapore
School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore
H. K. Li received the B.S. and M.S. degrees in microelectronics and solid-state electronics from the Huazhong University of Science and Technology, Wuhan, China, in 2009 and 2012, respectively. He is currently pursuing the Ph.D. degree with Nanyang Technological University, Singapore.
H. K. Li received the B.S. and M.S. degrees in microelectronics and solid-state electronics from the Huazhong University of Science and Technology, Wuhan, China, in 2009 and 2012, respectively. He is currently pursuing the Ph.D. degree with Nanyang Technological University, Singapore.View more
Author image of T. P. Chen
Institute of Microelectronics, Agency for Science, Technology and Research, Singapore
T. P. Chen received the Ph.D. degree from The University of Hong Kong, Hong Kong, in 1994.
He is currently an Associate Professor with the School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore.
T. P. Chen received the Ph.D. degree from The University of Hong Kong, Hong Kong, in 1994.
He is currently an Associate Professor with the School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore.View more
Author image of S. G. Hu
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China
S. G. Hu received the B.S. degree from the University of Electronic Science and Technology of China, Chengdu, China, in 2012, where he is currently pursuing the Ph.D. degree.
S. G. Hu received the B.S. degree from the University of Electronic Science and Technology of China, Chengdu, China, in 2012, where he is currently pursuing the Ph.D. degree.View more
Author image of P. Liu
Institute of Microelectronics, Agency for Science, Technology and Research, Singapore
P. Liu received the B.S. degree in electrical and electronic engineering from Nanyang Technological University, Singapore, where he is currently pursuing the Ph.D. degree.
P. Liu received the B.S. degree in electrical and electronic engineering from Nanyang Technological University, Singapore, where he is currently pursuing the Ph.D. degree.View more
Author image of Y. Liu
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China
Y. Liu received the Ph.D. degree from Nanyang Technological University, Singapore, in 2005.
He joined the University of Electronic Science and Technology of China, Chengdu, China, where he has been a Full Professor since 2008.
Y. Liu received the Ph.D. degree from Nanyang Technological University, Singapore, in 2005.
He joined the University of Electronic Science and Technology of China, Chengdu, China, where he has been a Full Professor since 2008.View more
Author image of P. S. Lee
School of Materials Science and Engineering, Nanyang Technological University, Singapore
P. S. Lee received the Ph.D. degree from the National University of Singapore, Singapore, in 2001.
She is currently an Associate Professor with the School of Materials Science and Engineering, Nanyang Technological University, Singapore.
P. S. Lee received the Ph.D. degree from the National University of Singapore, Singapore, in 2001.
She is currently an Associate Professor with the School of Materials Science and Engineering, Nanyang Technological University, Singapore.View more
Author image of X. P. Wang
Institute of Microelectronics, Agency for Science, Technology and Research, Singapore
X. P. Wang received the B.Eng. and M.Eng. degrees from Tsinghua University, Beijing, China, in 1999 and 2002, respectively, and the Ph.D. degree from the National University of Singapore, Singapore, in 2007.
He is currently a Scientist with the Institute of Microelectronics, Agency for Science, Technology and Research, Singapore.
X. P. Wang received the B.Eng. and M.Eng. degrees from Tsinghua University, Beijing, China, in 1999 and 2002, respectively, and the Ph.D. degree from the National University of Singapore, Singapore, in 2007.
He is currently a Scientist with the Institute of Microelectronics, Agency for Science, Technology and Research, Singapore.View more
Author image of H. Y. Li
Institute of Microelectronics, Agency for Science, Technology and Research, Singapore
H. Y. Li received the Ph.D. degree in semiconductor physics and devices from the Changchun Institute of Physics, Chinese Academy of Sciences, Changchun, China, in 1999.
She is currently a Scientist with the Institute of Microelectronics, Agency for Science, Technology and Research, Singapore.
H. Y. Li received the Ph.D. degree in semiconductor physics and devices from the Changchun Institute of Physics, Chinese Academy of Sciences, Changchun, China, in 1999.
She is currently a Scientist with the Institute of Microelectronics, Agency for Science, Technology and Research, Singapore.View more
Author image of G. Q. Lo
Institute of Microelectronics, Agency for Science, Technology and Research, Singapore
G. Q. Lo received the M.S. and Ph.D. degrees in electrical and computer engineering from The University of Texas at Austin, Austin, TX, USA, in 1989 and 1992, respectively.
He has been with the Institute of Microelectronics (IME), Agency for Science, Technology and Research, Singapore, since 2004. He is currently the Laboratory Director for IME’s Semiconductor Process Technology and the Program Director of the Nanoelectron...Show More
G. Q. Lo received the M.S. and Ph.D. degrees in electrical and computer engineering from The University of Texas at Austin, Austin, TX, USA, in 1989 and 1992, respectively.
He has been with the Institute of Microelectronics (IME), Agency for Science, Technology and Research, Singapore, since 2004. He is currently the Laboratory Director for IME’s Semiconductor Process Technology and the Program Director of the Nanoelectron...View more

I. Introduction

Resistive switching random access memory (RRAM) based on metal oxides, such as Al2O3, ZnO, NiOx, TiO2, and CuxO, is promising in the application of next-generation nonvolatile memory due to its simple structure, low-power consumption, high read/write speed, and good reliability [1]–[7]. Recently, multilevel resistance states in RRAM devices have been demonstrated to increase the storage density of the RRAM device [8], [9]. Until now, most of the studies were focused on the performance improvement and reliability of the multibit storage, there are relatively few studies on the mechanism for the multilevel resistance states of RRAM device. In this brief, impedance spectroscopy is employed to investigate multilevel high-resistance states in TiN/HfOx/Pt RRAM structure. Impedance spectroscopy is a powerful tool to examine the conduction properties of dielectric thin films, making it suitable for resistive switching property study [10], [11]. For the TiN/HfOx/Pt RRAM structure used in this brief, the multilevel high-resistance states may be attributed to the different rupture degrees of the conductive filament, which is hard to be detected by the microscopic techniques such as transmission electron microscopy and scanning probe microscopy. However, through the analysis of the impedance measurement, we have been able to obtain information about the redox reaction relating to the change of TiON interfacial layer and rupture of the conductive filament for different high-resistance states.

Author image of H. K. Li
Institute of Microelectronics, Agency for Science, Technology and Research, Singapore
School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore
H. K. Li received the B.S. and M.S. degrees in microelectronics and solid-state electronics from the Huazhong University of Science and Technology, Wuhan, China, in 2009 and 2012, respectively. He is currently pursuing the Ph.D. degree with Nanyang Technological University, Singapore.
H. K. Li received the B.S. and M.S. degrees in microelectronics and solid-state electronics from the Huazhong University of Science and Technology, Wuhan, China, in 2009 and 2012, respectively. He is currently pursuing the Ph.D. degree with Nanyang Technological University, Singapore.View more
Author image of T. P. Chen
Institute of Microelectronics, Agency for Science, Technology and Research, Singapore
T. P. Chen received the Ph.D. degree from The University of Hong Kong, Hong Kong, in 1994.
He is currently an Associate Professor with the School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore.
T. P. Chen received the Ph.D. degree from The University of Hong Kong, Hong Kong, in 1994.
He is currently an Associate Professor with the School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore.View more
Author image of S. G. Hu
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China
S. G. Hu received the B.S. degree from the University of Electronic Science and Technology of China, Chengdu, China, in 2012, where he is currently pursuing the Ph.D. degree.
S. G. Hu received the B.S. degree from the University of Electronic Science and Technology of China, Chengdu, China, in 2012, where he is currently pursuing the Ph.D. degree.View more
Author image of P. Liu
Institute of Microelectronics, Agency for Science, Technology and Research, Singapore
P. Liu received the B.S. degree in electrical and electronic engineering from Nanyang Technological University, Singapore, where he is currently pursuing the Ph.D. degree.
P. Liu received the B.S. degree in electrical and electronic engineering from Nanyang Technological University, Singapore, where he is currently pursuing the Ph.D. degree.View more
Author image of Y. Liu
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China
Y. Liu received the Ph.D. degree from Nanyang Technological University, Singapore, in 2005.
He joined the University of Electronic Science and Technology of China, Chengdu, China, where he has been a Full Professor since 2008.
Y. Liu received the Ph.D. degree from Nanyang Technological University, Singapore, in 2005.
He joined the University of Electronic Science and Technology of China, Chengdu, China, where he has been a Full Professor since 2008.View more
Author image of P. S. Lee
School of Materials Science and Engineering, Nanyang Technological University, Singapore
P. S. Lee received the Ph.D. degree from the National University of Singapore, Singapore, in 2001.
She is currently an Associate Professor with the School of Materials Science and Engineering, Nanyang Technological University, Singapore.
P. S. Lee received the Ph.D. degree from the National University of Singapore, Singapore, in 2001.
She is currently an Associate Professor with the School of Materials Science and Engineering, Nanyang Technological University, Singapore.View more
Author image of X. P. Wang
Institute of Microelectronics, Agency for Science, Technology and Research, Singapore
X. P. Wang received the B.Eng. and M.Eng. degrees from Tsinghua University, Beijing, China, in 1999 and 2002, respectively, and the Ph.D. degree from the National University of Singapore, Singapore, in 2007.
He is currently a Scientist with the Institute of Microelectronics, Agency for Science, Technology and Research, Singapore.
X. P. Wang received the B.Eng. and M.Eng. degrees from Tsinghua University, Beijing, China, in 1999 and 2002, respectively, and the Ph.D. degree from the National University of Singapore, Singapore, in 2007.
He is currently a Scientist with the Institute of Microelectronics, Agency for Science, Technology and Research, Singapore.View more
Author image of H. Y. Li
Institute of Microelectronics, Agency for Science, Technology and Research, Singapore
H. Y. Li received the Ph.D. degree in semiconductor physics and devices from the Changchun Institute of Physics, Chinese Academy of Sciences, Changchun, China, in 1999.
She is currently a Scientist with the Institute of Microelectronics, Agency for Science, Technology and Research, Singapore.
H. Y. Li received the Ph.D. degree in semiconductor physics and devices from the Changchun Institute of Physics, Chinese Academy of Sciences, Changchun, China, in 1999.
She is currently a Scientist with the Institute of Microelectronics, Agency for Science, Technology and Research, Singapore.View more
Author image of G. Q. Lo
Institute of Microelectronics, Agency for Science, Technology and Research, Singapore
G. Q. Lo received the M.S. and Ph.D. degrees in electrical and computer engineering from The University of Texas at Austin, Austin, TX, USA, in 1989 and 1992, respectively.
He has been with the Institute of Microelectronics (IME), Agency for Science, Technology and Research, Singapore, since 2004. He is currently the Laboratory Director for IME’s Semiconductor Process Technology and the Program Director of the Nanoelectronics and Photonics Program.
G. Q. Lo received the M.S. and Ph.D. degrees in electrical and computer engineering from The University of Texas at Austin, Austin, TX, USA, in 1989 and 1992, respectively.
He has been with the Institute of Microelectronics (IME), Agency for Science, Technology and Research, Singapore, since 2004. He is currently the Laboratory Director for IME’s Semiconductor Process Technology and the Program Director of the Nanoelectronics and Photonics Program.View more

References

References is not available for this document.