Abstract:
The first ultrathin oxide-nitride (O-N) gate dielectrics with oxide equivalent thickness of less than 2 nm have been deposited and characterized in n-MOSFET's. The O-N ga...Show MoreMetadata
Abstract:
The first ultrathin oxide-nitride (O-N) gate dielectrics with oxide equivalent thickness of less than 2 nm have been deposited and characterized in n-MOSFET's. The O-N gates, deposited by remote plasma-enhanced CVD, demonstrate reduced gate leakage when compared with oxides of equivalent thickness while retaining comparable drive currents.
Published in: IEEE Electron Device Letters ( Volume: 19, Issue: 4, April 1998)
DOI: 10.1109/55.663529
Citations are not available for this document.
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