Abstract:
The first ultrathin oxide-nitride (O-N) gate dielectrics with oxide equivalent thickness of less than 2 nm have been deposited and characterized in n-MOSFET's. The O-N ga...Show MoreMetadata
Abstract:
The first ultrathin oxide-nitride (O-N) gate dielectrics with oxide equivalent thickness of less than 2 nm have been deposited and characterized in n-MOSFET's. The O-N gates, deposited by remote plasma-enhanced CVD, demonstrate reduced gate leakage when compared with oxides of equivalent thickness while retaining comparable drive currents.
Published in: IEEE Electron Device Letters ( Volume: 19, Issue: 4, April 1998)
DOI: 10.1109/55.663529
Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, NC, USA
Department of Physics and the Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, NC, USA
Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, NC, USA
Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, NC, USA
Department of Physics and the Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, NC, USA
Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, NC, USA
