Characterization and analysis of OFET devices based on TCAD simulations

Omega-field-effect transistor (OFET) devices, which feature an undoped cylindrical channel uniformly surrounded by a gate electrode, are investigated in this paper. The study is based on TCAD device simulations of OFETs with gate lengths ranging between 10 and 130 nm and radii ranging between 1 and 65 nm. Device characteristics such as the threshold voltage, the subthreshold swing, the drain saturation, and leakage current as well as drain-induced barrier lowering are discussed as functions of radii and gate lengths. Further, the influence of transversal and longitudinal size quantization effects in OFETs are investigated.

I. Introduction

Finfet transistors are very promising candidates to extend the scalability of CMOS technology. Industry is currently exploring several variations of FinFET devices [1] [2] [3]. All FinFET structures feature a channel area, which is completely surrounded by oxide, and surrounded on at least three sides by the gate electrode.