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Characterization and analysis of OFET devices based on TCAD simulations | IEEE Journals & Magazine | IEEE Xplore

Characterization and analysis of OFET devices based on TCAD simulations


Abstract:

Omega-field-effect transistor (OFET) devices, which feature an undoped cylindrical channel uniformly surrounded by a gate electrode, are investigated in this paper. The s...Show More

Abstract:

Omega-field-effect transistor (OFET) devices, which feature an undoped cylindrical channel uniformly surrounded by a gate electrode, are investigated in this paper. The study is based on TCAD device simulations of OFETs with gate lengths ranging between 10 and 130 nm and radii ranging between 1 and 65 nm. Device characteristics such as the threshold voltage, the subthreshold swing, the drain saturation, and leakage current as well as drain-induced barrier lowering are discussed as functions of radii and gate lengths. Further, the influence of transversal and longitudinal size quantization effects in OFETs are investigated.
Published in: IEEE Transactions on Electron Devices ( Volume: 52, Issue: 9, September 2005)
Page(s): 2034 - 2041
Date of Publication: 30 September 2005

ISSN Information:

Author image of J.A. Kenrow
Department of Electrical and Computer Engineering, University of the Pacific, Stockton, Stockton, CA, USA
Julie A. Kenrow (S'87–M'94) received the B.S. degree in physics and the M.S. degree in electrical engineering from University of California (UC) at Davis, in 1986 and 1989, respectively, and the Ph.D. degree in electrical engineering from the UC Berkeley, Berkeley, in 1994.
From 1994 to 1995 she was a Lecturer in the Electrical Engineering and Computer Science Department at UC Berkeley. From 1996 to 1998 she was a Postdoca...Show More
Julie A. Kenrow (S'87–M'94) received the B.S. degree in physics and the M.S. degree in electrical engineering from University of California (UC) at Davis, in 1986 and 1989, respectively, and the Ph.D. degree in electrical engineering from the UC Berkeley, Berkeley, in 1994.
From 1994 to 1995 she was a Lecturer in the Electrical Engineering and Computer Science Department at UC Berkeley. From 1996 to 1998 she was a Postdoca...View more

I. Introduction

Finfet transistors are very promising candidates to extend the scalability of CMOS technology. Industry is currently exploring several variations of FinFET devices [1] [2] [3]. All FinFET structures feature a channel area, which is completely surrounded by oxide, and surrounded on at least three sides by the gate electrode.

Author image of J.A. Kenrow
Department of Electrical and Computer Engineering, University of the Pacific, Stockton, Stockton, CA, USA
Julie A. Kenrow (S'87–M'94) received the B.S. degree in physics and the M.S. degree in electrical engineering from University of California (UC) at Davis, in 1986 and 1989, respectively, and the Ph.D. degree in electrical engineering from the UC Berkeley, Berkeley, in 1994.
From 1994 to 1995 she was a Lecturer in the Electrical Engineering and Computer Science Department at UC Berkeley. From 1996 to 1998 she was a Postdocatoral Research Associate in the Physics Department at the University of Florida, Gainesville, where she conducted research on modeling ultrafast electron transport in nanoscale semiconductor devices and modeling ultrafast optical processes in GaN. This work has been published in several Physical Review Letters and Physical Review B articles. From 1998 to 1999, she was a Visiting Professor in the Electrical Engineering Department, Santa Clara University. In 1999, she joined the Electrical and Computer Engineering Department at the University of the Pacific, Stockton, CA. Her current position is Associate Professor and research interests are in the field of modeling and characterization of nanoscale devices.
Prof. Kenrow is also a member of the American Physical Society, American Society of Engineering Education and the IEEE Electron Device Society. She is also an active member of the Santa Clara Valley IEEE K-12 Committee where she volunteers her time for mentoring, outreach, and scientific judging for K-12 students.
Julie A. Kenrow (S'87–M'94) received the B.S. degree in physics and the M.S. degree in electrical engineering from University of California (UC) at Davis, in 1986 and 1989, respectively, and the Ph.D. degree in electrical engineering from the UC Berkeley, Berkeley, in 1994.
From 1994 to 1995 she was a Lecturer in the Electrical Engineering and Computer Science Department at UC Berkeley. From 1996 to 1998 she was a Postdocatoral Research Associate in the Physics Department at the University of Florida, Gainesville, where she conducted research on modeling ultrafast electron transport in nanoscale semiconductor devices and modeling ultrafast optical processes in GaN. This work has been published in several Physical Review Letters and Physical Review B articles. From 1998 to 1999, she was a Visiting Professor in the Electrical Engineering Department, Santa Clara University. In 1999, she joined the Electrical and Computer Engineering Department at the University of the Pacific, Stockton, CA. Her current position is Associate Professor and research interests are in the field of modeling and characterization of nanoscale devices.
Prof. Kenrow is also a member of the American Physical Society, American Society of Engineering Education and the IEEE Electron Device Society. She is also an active member of the Santa Clara Valley IEEE K-12 Committee where she volunteers her time for mentoring, outreach, and scientific judging for K-12 students.View more
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