Abstract:
Limited reaction processing (LRP) has been used to achieve the in-situ growth of epitaxial silicon-oxide-doped polysilicon layers. The in-situ growth of these multiple la...Show MoreMetadata
Abstract:
Limited reaction processing (LRP) has been used to achieve the in-situ growth of epitaxial silicon-oxide-doped polysilicon layers. The in-situ growth of these multiple layers was combined with the selective epitaxial growth technique to create structures for MOSFET fabrication. The results of n- and p-channel transistor fabrication utilizing these structures are presented.
Published in: IEEE Electron Device Letters ( Volume: 7, Issue: 10, October 1986)
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