Application of selective silicon epitaxial growth for CMOS technology

This paper describes the application of selective epltaxial growth for device isolation. An improved selective epitaxial isolation technology is presented in the fabrication of CMOS LSI. This advanced process technology results in a superior selectivity for selective silicon deposition. CMOS ring-oscillator with a twin-well structure is fabricated by using this selective epitaxial isolation technology. In contrast to LOCOS technology, it is demonstrated that this technology is useful for scaled CMOS in eliminating lateral oxidation and successful overlapping contacts due to it's steeper boundary of oxide-to-silicon isolation.