Journals & Magazines >IEEE Electron Device Letters >Volume: 7 Issue: 10

In-situ epitaxial silicon—oxide-doped polysilicon structures for MOS field-effect transistors

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Abstract:

Limited reaction processing (LRP) has been used to achieve the in-situ growth of epitaxial silicon-oxide-doped polysilicon layers. The in-situ growth of these multiple la...Show More

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Abstract:

Limited reaction processing (LRP) has been used to achieve the in-situ growth of epitaxial silicon-oxide-doped polysilicon layers. The in-situ growth of these multiple layers was combined with the selective epitaxial growth technique to create structures for MOSFET fabrication. The results of n- and p-channel transistor fabrication utilizing these structures are presented.

Published in: IEEE Electron Device Letters ( Volume: 7, Issue: 10, October 1986)

Page(s): 577 - 579

Date of Publication: 09 August 2005

ISSN Information:

DOI: 10.1109/EDL.1986.26479

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IEEE Keywords
- FETs ,
- Fabrication ,
- Silicon ,
- Epitaxial growth ,
- Gases ,
- Temperature ,
- Substrates ,
- MOSFET circuits ,
- Laboratories ,
- Oxidation
Index Terms
- Selective Growth ,
- Epitaxial Growth ,
- Layer Growth ,
- Conventional Process ,
- Dielectric Layer ,
- Reaction Tube ,
- Process Gas ,
- Epitaxial Layer ,
- Semiconductor Layer ,
- Gate Oxide ,
- Surface Mobility ,
- Complementary Structure ,
- Doping Profile

Keywords assist with retrieval of results and provide a means to discovering other relevant content. Learn more.

IEEE Keywords
- FETs ,
- Fabrication ,
- Silicon ,
- Epitaxial growth ,
- Gases ,
- Temperature ,
- Substrates ,
- MOSFET circuits ,
- Laboratories ,
- Oxidation
Index Terms
- Selective Growth ,
- Epitaxial Growth ,
- Layer Growth ,
- Conventional Process ,
- Dielectric Layer ,
- Reaction Tube ,
- Process Gas ,
- Epitaxial Layer ,
- Semiconductor Layer ,
- Gate Oxide ,
- Surface Mobility ,
- Complementary Structure ,
- Doping Profile

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In-situ epitaxial silicon—oxide-doped polysilicon structures for MOS field-effect transistors

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In-situ epitaxial silicon—oxide-doped polysilicon structures for MOS field-effect transistors

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