Abstract:
The authors present the results of investigations on electrical properties of Si/sup +//P/sup +/ and Mg/sup +//P/sup +/ co-implanted InP wafers subjected to rapid isother...Show MoreMetadata
Abstract:
The authors present the results of investigations on electrical properties of Si/sup +//P/sup +/ and Mg/sup +//P/sup +/ co-implanted InP wafers subjected to rapid isothermal processing. It was found that a significant improvement of activation of Si and Mg in InP can be obtained by P/sup +/ co-implantations and rapid isothermal processing. The annealing cycle was at temperatures from 825 to 875 degrees C for 5 and 14 s. The maximum dopant activation and peak electron concentration for Si/sup +//P/sup +/ coimplants at doses of 1*10/sup 15//cm/sup 2/ were 70% and 5*10/sup 19/ cm/sup 3/. A high hole concentration of 1.1*10/sup 19//cm/sup 3/ was obtained by Mg/sup +//P/sup +/ coimplantations.<>
Published in: IEEE Transactions on Electron Devices ( Volume: 39, Issue: 1, January 1992)
DOI: 10.1109/16.108238
Ion Beam Laboratory, Shanghai Institute of Metallurgy, Academia Sinica, Shanghai, China
Ion Beam Laboratory, Shanghai Institute of Metallurgy, Academia Sinica, Shanghai, China
Ion Beam Laboratory, Shanghai Institute of Metallurgy, Academia Sinica, Shanghai, China
Ion Beam Laboratory, Shanghai Institute of Metallurgy, Academia Sinica, Shanghai, China
Ion Beam Laboratory, Shanghai Institute of Metallurgy, Academia Sinica, Shanghai, China
Ion Beam Laboratory, Shanghai Institute of Metallurgy, Academia Sinica, Shanghai, China
Ion Beam Laboratory, Shanghai Institute of Metallurgy, Academia Sinica, Shanghai, China
Ion Beam Laboratory, Shanghai Institute of Metallurgy, Academia Sinica, Shanghai, China
Ion Beam Laboratory, Shanghai Institute of Metallurgy, Academia Sinica, Shanghai, China
Ion Beam Laboratory, Shanghai Institute of Metallurgy, Academia Sinica, Shanghai, China