The authors present the results of investigations on electrical properties of Si/sup +//P/sup +/ and Mg/sup +//P/sup +/ co-implanted InP wafers subjected to rapid isothermal processing. It was found that a significant improvement of activation of Si and Mg in InP can be obtained by P/sup +/ co-implantations and rapid isothermal processing. The annealing cycle was at temperatures from 825 to 875 de...Show More