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Rencan Nie - IEEE Xplore Author Profile

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Author details

Rencan Nie

Also published under: Rencand Nie, Ren-can Nie

Publications

40

Citations

668

Publications by Year

20122024

Co-Authors:

Guanghui CaiJinde CaoZhaisheng DingHongwei DingHong-wei Ding

Show All Co-Authors (63)

Rencan Nie

Also published under: Rencand Nie, Ren-can Nie

Affiliation

School of Information Science and Engineering

Yunnan University

Kunming, People's Republic of China

Publication Topics

Convolutional Neural Network,
Fusion Method,
Source Images,
Feature Maps,
Image Pairs,
Convolutional Layers,
Extensive Experiments,
Feature Fusion,
Fusion Performance,
Fusion Rule,
Generative Adversarial Networks,
Image Fusion Methods

Biography

Rencan Nie received the B.E. degree in electronic information science and technology and the M.S. and Ph.D. degrees in communication and information system from Yunnan University, Kunming, China, in 2004, 2007, and 2013, respectively.,Since 2016, he has been a Post-Doctoral Research Fellow with the Department of Automation, Southeast University, Nanjing, China. He is currently an Associate Professor with the Department of Communication Engineering, Yunnan University. His current research interests include neural networks and image fusion.(Based on document published on 15 July 2019).

Publications

40

Citations

668

Publications by Year

20122024

Co-Authors:

Guanghui Cai
Jinde Cao
Zhaisheng Ding
Hongwei Ding
Hong-wei Ding

Show All Co-Authors (63)

Author's Published Works

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Showing 1-22 of 22 results

Journals (14)

Conferences (8)

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M. Okamoto(21)
K. Magari(10)
Y. Tohmori(8)
Y. Suzaki(6)
Y. Kondo(6)
NTT Opto-Elecronics Laboratories, Atsugi, Kanagawa, Japan(8)
NTT Opto-Elecronics Laboratories, Kanagawa, Japan(3)
NTT Photonics Laboratories, Atsugi, Kanagawa, Japan(2)
NTT Network Innovation Laboratories, Yokosuka, Kanagawa, Japan(1)
NTT Photonics Laboratories, NTT Corporation, Kanagawa, Japan(1)
IEEE Photonics Technology Letters(6)
IEEE Journal of Quantum Electronics(5)
Journal of Lightwave Technology(2)
Proceedings 27th European Conference on Optical Communication (Cat. No.01TH8551)(2)
12th IEEE International Conference on Semiconductor Laser(1)
IEEE(22)
Amsterdam, Netherlands(2)
Baltimore, MD, USA(1)
Davos, Switzerland(1)
Haifa, Israel(1)
Hokkaido, Japan(1)
Active Layer(10)
Optical Amplifier(8)
Optical Fiber(8)
TE Mode(7)
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Highly Stable 160-Gb/s OTDM Technologies Based on Integrated MUX/DEMUX and Drift-Free PLL-Type Clock Recovery

Takuya Ohara;Hidehiko Takara;Ippei Shake;Takashi Yamada;Motohaya Ishii;Ikuo Ogawa;Minoru Okamoto;Satoki Kawanishi

IEEE Journal of Selected Topics in Quantum Electronics

Year: 2007 | Volume: 13, Issue: 1 | Journal Article |

Cited by: Papers (13)

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This paper reports 160-Gb/s optical time-division-multiplexed (OTDM) technologies including an all-optical integrated multiplexer (MUX) providing all-channel independent modulation, an all-optical integrated demultiplexer (DEMUX) that offers all-channel simultaneous demultiplexing, and a drift-free phase-locked-loop (PLL)-type clock recovery circuit for ultrahigh-speed OTDM signals. We present the...Show More

Highly Stable 160-Gb/s OTDM Technologies Based on Integrated MUX/DEMUX and Drift-Free PLL-Type Clock Recovery

Takuya Ohara;Hidehiko Takara;Ippei Shake;Takashi Yamada;Motohaya Ishii;Ikuo Ogawa;Minoru Okamoto;Satoki Kawanishi

IEEE Journal of Selected Topics in Quantum Electronics

Year: 2007 | Volume: 13, Issue: 1 | Journal Article |

10-Gb/s low-input-power SOA-PLC hybrid integrated wavelength converter and its 8-slot unit

R. Sato;T. Ito;K. Magari;I. Ogawa;Y. Inoue;R. Kasahara;M. Okamoto;Y. Tohmori;Y. Suzuki

Journal of Lightwave Technology

Year: 2004 | Volume: 22, Issue: 5 | Journal Article |

Cited by: Papers (6)

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We achieved successful low-input-power (-10 dBm) wavelength conversion at 10 Gb/s by using a hybrid integrated cross-phase modulation wavelength converter (XPM-WC). The input CW power was also -10 dBm and the total current was only 215 mA, and no signal preamplifiers were used. From the relationship between the eye-opening ratio and the injection current to the SOA, we clarified the optimal curren...Show More

10-Gb/s low-input-power SOA-PLC hybrid integrated wavelength converter and its 8-slot unit

R. Sato;T. Ito;K. Magari;I. Ogawa;Y. Inoue;R. Kasahara;M. Okamoto;Y. Tohmori;Y. Suzuki

Journal of Lightwave Technology

Year: 2004 | Volume: 22, Issue: 5 | Journal Article |

160-Gb/s OTDM transmission using integrated all-optical MUX/DEMUX with all-channel modulation and demultiplexing

T. Ohara;H. Takara;I. Shake;K. Mori;K. Sato;S. Kawanishi;S. Mino;T. Yamada;M. Ishii;I. Ogawa;T. Kitoh;K. Magari;M. Okamoto;R.V. Roussev;J.R. Kurz;K.R. Parameswaran;M.M. Fejer

IEEE Photonics Technology Letters

Year: 2004 | Volume: 16, Issue: 2 | Journal Article |

Cited by: Papers (46)

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This letter provides the first report of 160-Gb/s optical time-division-multiplexed transmission with all-channel independent modulation and all-channel simultaneous demultiplexing. By using a multiplexer and a demultiplexer based on periodically poled lithium niobate and semiconductor optical amplifier hybrid integrated planar lightwave circuits, 160-km transmission is successfully demonstrated.Show More

160-Gb/s OTDM transmission using integrated all-optical MUX/DEMUX with all-channel modulation and demultiplexing

T. Ohara;H. Takara;I. Shake;K. Mori;K. Sato;S. Kawanishi;S. Mino;T. Yamada;M. Ishii;I. Ogawa;T. Kitoh;K. Magari;M. Okamoto;R.V. Roussev;J.R. Kurz;K.R. Parameswaran;M.M. Fejer

IEEE Photonics Technology Letters

Year: 2004 | Volume: 16, Issue: 2 | Journal Article |

160 Gbit/s full OTDM demultiplexing based on FWM of SOA-array integrated on planar lightwave circuit

I. Shake;H. Takara;K. Uchiyama;I. Ogawa;T. Kitoh;T. Kitagawa;M. Okamoto;K. Magari;Y. Suzuki;T. Morioka

Proceedings 27th European Conference on Optical Communication (Cat. No.01TH8551)

Year: 2001 | Conference Paper |

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We demonstrate 160 Gbit/s full time-division demultiplexing using a semiconductor optical amplifier (SOA) hybrid integrated demultiplexer in a planar lightwave circuit. Error-free demultiplexing from a 160 Gbit/s signal to 8 channel, 20Gbit/s signals is successfully demonstrated.Show More

160 Gbit/s full OTDM demultiplexing based on FWM of SOA-array integrated on planar lightwave circuit

I. Shake;H. Takara;K. Uchiyama;I. Ogawa;T. Kitoh;T. Kitagawa;M. Okamoto;K. Magari;Y. Suzuki;T. Morioka

Proceedings 27th European Conference on Optical Communication (Cat. No.01TH8551)

Year: 2001 | Volume: 2 | Conference Paper |

Low input power (-10 dBm) SOA-PLC hybrid integrated wavelength converter and its 8-slot equipment

R. Sato;T. Ito;K. Magari;Y. Inoue;I. Ogawa;R. Kasahara;M. Okamoto;Y. Tohmori;Y. Suzuki;N. Ishihara

Proceedings 27th European Conference on Optical Communication (Cat. No.01TH8551)

Year: 2001 | Conference Paper |

Cited by: Papers (7)

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We successfully achieved -10 dBm signal power and -10 dBm CW power operation using a hybrid integrated wavelength converter at 10 Gb/s without an optical preamplifier. Clear eye opening and a low power penalty less than 1 dB were achieved for all 8 slots.Show More

Low input power (-10 dBm) SOA-PLC hybrid integrated wavelength converter and its 8-slot equipment

R. Sato;T. Ito;K. Magari;Y. Inoue;I. Ogawa;R. Kasahara;M. Okamoto;Y. Tohmori;Y. Suzuki;N. Ishihara

Proceedings 27th European Conference on Optical Communication (Cat. No.01TH8551)

Year: 2001 | Volume: 4 | Conference Paper |

A circular beam spot and low threshold current laser diode with reverse-v-shape layer

T. Takeshita;Y. Shibata;T. Ito;Y. Sakai;M. Okamoto;Y. Tohmori

IEEE Journal of Quantum Electronics

Year: 2001 | Volume: 37, Issue: 12 | Journal Article |

Cited by: Papers (2) | Patents (2)

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A laser with a reverse-V-shape layer exhibits a circular beam spot and low threshold current. The beam aspect ratio of the reverse-V-shape laser is clarified to be insensitive to reverse-V-shape width. The reverse-V-shape layer consists of a strained active layer and a passive guide layer, which leads to a low threshold current. The reverse-V-shape laser is attractive as an optical source for opti...Show More

A circular beam spot and low threshold current laser diode with reverse-v-shape layer

T. Takeshita;Y. Shibata;T. Ito;Y. Sakai;M. Okamoto;Y. Tohmori

IEEE Journal of Quantum Electronics

Year: 2001 | Volume: 37, Issue: 12 | Journal Article |

Temperature- and polarization-insensitive responsivity of a 1.3-/spl mu/m optical transceiver diode with an integrated spot-size converter

Y. Suzaki;R. Iga;K. Kishi;Y. Kawaguchi;S. Matsumoto;M. Okamoto;M. Yamamoto

IEEE Journal of Quantum Electronics

Year: 1998 | Volume: 34, Issue: 4 | Journal Article |

Cited by: Papers (1)

We have demonstrated an optical transceiver diode integrated with a spot-size converter. We clarify that the design of a detection layer is essential for the temperature- and polarization-insensitive characteristics of the responsivity. Because the detection layer was introduced, 0.65 dB of responsivity deviation was obtained in the wide temperature range of -10/spl deg/C-85/spl deg/C with a high ...Show More

Temperature- and polarization-insensitive responsivity of a 1.3-/spl mu/m optical transceiver diode with an integrated spot-size converter

Y. Suzaki;R. Iga;K. Kishi;Y. Kawaguchi;S. Matsumoto;M. Okamoto;M. Yamamoto

IEEE Journal of Quantum Electronics

Year: 1998 | Volume: 34, Issue: 4 | Journal Article |

LD optical switch with polarization insensitivity over a wide wavelength range

T. Takeshita;K. Yoshino;T. Ito;W.W. Lui;M. Okamoto;Y. Kondo;K. Kishi;T. Tamamura;Y. Suzuki;K. Magari;M. Yamamoto;M. Naganuma

IEEE Journal of Quantum Electronics

Year: 1998 | Volume: 34, Issue: 2 | Journal Article |

Cited by: Papers (6) | Patents (1)

A double-heterostructure (DH) laser with TM mode lasing has been achieved with a narrow active-layer width, and a laser-diode optical switch (LDSW) module with less than a 0.35-dB gain difference between the TE and TM modes over a wide wavelength range has been constructed by introducing a square bulk active layer formed by dry etching and regrowth. The polarization-insensitive width of a 0.3-/spl...Show More

LD optical switch with polarization insensitivity over a wide wavelength range

T. Takeshita;K. Yoshino;T. Ito;W.W. Lui;M. Okamoto;Y. Kondo;K. Kishi;T. Tamamura;Y. Suzuki;K. Magari;M. Yamamoto;M. Naganuma

IEEE Journal of Quantum Electronics

Year: 1998 | Volume: 34, Issue: 2 | Journal Article |

Wide-temperature-range operation of a butt-joint spot-size converter integrated 1.3-/spl mu/m light-emission-and-detection (LEAD) diode

Y. Suzaki;S. Matsumoto;T. Kurosaki;Y. Tohmori;K. Kishi;M. Okamoto;M. Yamamoto

CLEO '97., Summaries of Papers Presented at the Conference on Lasers and Electro-Optics

Year: 1997 | Conference Paper |

First Page of the Article

Wide-temperature-range operation of a butt-joint spot-size converter integrated 1.3-/spl mu/m light-emission-and-detection (LEAD) diode

Y. Suzaki;S. Matsumoto;T. Kurosaki;Y. Tohmori;K. Kishi;M. Okamoto;M. Yamamoto

CLEO '97., Summaries of Papers Presented at the Conference on Lasers and Electro-Optics

Year: 1997 | Volume: 11 | Conference Paper |

Improvement of spectrum characteristics in spot-size converter integrated lasers with tilted butt joint portion

Y. Itaya;Y. Tohmori;O. Mitomi;H. Okamoto;Y. Suzaki;T. Kurosaki;M. Wada;K. Kasaya;Y. Sakai;M. Okamoto

Conference Digest. 15th IEEE International Semiconductor Laser Conference

Year: 1996 | Conference Paper |

Cited by: Papers (2) | Patents (1)

A spot-size converter integrated MQW laser with a tilted butt joint was fabricated to reduce reflection from the joint. It produced no degradation in bit error rate performance and repeatedly provided low threshold current and low coupling loss to the cleaved fiber in 2 inch wafer process.Show More

Improvement of spectrum characteristics in spot-size converter integrated lasers with tilted butt joint portion

Y. Itaya;Y. Tohmori;O. Mitomi;H. Okamoto;Y. Suzaki;T. Kurosaki;M. Wada;K. Kasaya;Y. Sakai;M. Okamoto

Conference Digest. 15th IEEE International Semiconductor Laser Conference

Year: 1996 | Conference Paper |

Optical spot-size converters for low-loss coupling between fibers and optoelectronic semiconductor devices

O. Mitomi;K. Kasaya;Y. Tohmori;Y. Suzaki;H. Fukano;Y. Sakai;M. Okamoto;S. Matsumoto

Journal of Lightwave Technology

Year: 1996 | Volume: 14, Issue: 7 | Journal Article |

Cited by: Papers (22) | Patents (15)

Structures of spot size converters that allow low loss and easy coupling between an optical semiconductor device and a fiber are proposed and designed theoretically. These spot-size converters have a tapered small core for expanding the mode field. They also have a double cladding region which consists of an n/sup +/-doped InP substrate as the outer cladding and a p-doped or nondoped InP layer as ...Show More

Optical spot-size converters for low-loss coupling between fibers and optoelectronic semiconductor devices

O. Mitomi;K. Kasaya;Y. Tohmori;Y. Suzaki;H. Fukano;Y. Sakai;M. Okamoto;S. Matsumoto

Journal of Lightwave Technology

Year: 1996 | Volume: 14, Issue: 7 | Journal Article |

Improved FFP of a 1.3-/spl mu/m spot-size converted laser for highly efficient coupling to optical fiber

Y. Sakai;Y. Tohmori;Y. Suzaki;H. Oohashi;Y. Kondo;M. Okamoto;O. Mitomi;Y. Itaya;T. Sugie

Optical Fiber Communications, OFC.

Year: 1996 | Conference Paper |

Summary form only given. A laser diode with a spot-size converter provides highly efficient coupling to the optical fiber without using lenses and provides a wide alignment tolerance in an optical module assembly. In this paper, the active region is optimized using a strained multiple quantum well (MQW) that has been buried with pn-heterostructure (pn-BH) to improve the maximum output power and la...

First Page of the Article

Improved FFP of a 1.3-/spl mu/m spot-size converted laser for highly efficient coupling to optical fiber

Y. Sakai;Y. Tohmori;Y. Suzaki;H. Oohashi;Y. Kondo;M. Okamoto;O. Mitomi;Y. Itaya;T. Sugie

Optical Fiber Communications, OFC.

Year: 1996 | Conference Paper |

Uniformity of 1.3-/spl mu/m laser diodes with butt-jointed selectively grown spot-size converter fabricated on 2-inch InP substrates

H. Okamoto;Y. Suzaki;Y. Tohmori;M. Okamoto;Y. Kondo;Y. Kadota;M. Yamamoto;K. Kishi;Y. Sakai;T. Sugie;A.Y. Itaya

Proceedings of 8th International Conference on Indium Phosphide and Related Materials

Year: 1996 | Conference Paper |

A spot-size converted laser diode (SSC-LD) is an attractive device for low cost optical modules because it provides low-loss coupling to a single-mode fiber and to a Planar Lightwave Circuit (PLC) without using lenses as well as large alignment tolerance. Many intensive studies have been done in this field. We have recently developed 1.3 /spl mu/m-LDs with butt-jointed selectively grown spot-size ...Show More

Uniformity of 1.3-/spl mu/m laser diodes with butt-jointed selectively grown spot-size converter fabricated on 2-inch InP substrates

H. Okamoto;Y. Suzaki;Y. Tohmori;M. Okamoto;Y. Kondo;Y. Kadota;M. Yamamoto;K. Kishi;Y. Sakai;T. Sugie;A.Y. Itaya

Proceedings of 8th International Conference on Indium Phosphide and Related Materials

Year: 1996 | Conference Paper |

Magneto-luminescence study of strain and lateral confinement effects in InAs/sub 0.48/P/sub 0.52//InP quantum well wires

J. Hammersberg;M. Notomi;H. Weman;M. Potemski;H. Sugiura;M. Okamoto;T. Tamamura

Seventh International Conference on Indium Phosphide and Related Materials

Year: 1995 | Conference Paper |

Photoluminescence experiments on strained InAs/sub 0.48/P/sub 0.52/InP quantum wires show that the wire-width-dependent blue shift of the transition energy is much larger than the blue shift in lattice matched quantum wires. With magneto-luminescence measurements we are able to prove that lateral confinement effects only partly explain the observed blue shift. The other contribution comes from the...Show More

Magneto-luminescence study of strain and lateral confinement effects in InAs/sub 0.48/P/sub 0.52//InP quantum well wires

J. Hammersberg;M. Notomi;H. Weman;M. Potemski;H. Sugiura;M. Okamoto;T. Tamamura

Seventh International Conference on Indium Phosphide and Related Materials

Year: 1995 | Conference Paper |

An InP-based optical multiplexer for 100-GHz pulse-train generation

F. Zamkotsian;H. Okamoto;K. Kishi;M. Okamoto;Y. Yoshikuni;K. Sato;K. Oe

IEEE Photonics Technology Letters

Year: 1995 | Volume: 7, Issue: 5 | Journal Article |

Cited by: Papers (8)

A 100-GHz optical pulse train is generated using an InP-based optical multiplexer. This device is based on a waveguide array with five paths of different lengths separated by a 10-ps propagation time. We used a multimode interference (MMI) splitter at the input and a taper-type combiner at the output. This device is well-suited for optical time-division multiplexing (OTDM) applications.<>Show More

An InP-based optical multiplexer for 100-GHz pulse-train generation

F. Zamkotsian;H. Okamoto;K. Kishi;M. Okamoto;Y. Yoshikuni;K. Sato;K. Oe

IEEE Photonics Technology Letters

Year: 1995 | Volume: 7, Issue: 5 | Journal Article |

Polarization-insensitive optical amplifier with tensile-strained-barrier MQW structure

K. Magari;M. Okamoto;Y. Suzuki;K. Sato;Y. Noguchi;O. Mikami

IEEE Journal of Quantum Electronics

Year: 1994 | Volume: 30, Issue: 3 | Journal Article |

Cited by: Papers (48) | Patents (8)

A new approach to achieving a polarization-insensitive semiconductor optical amplifier is presented. The active layer consists of a tensile-strained-barrier MQW structure that enhances TM mode gain. Polarization sensitivity below 0.5 dB is realized at a wavelength of 1.56 /spl mu/m. A signal gain of 27.5 dB is obtained along with a saturation output power of 14 dBm. Deriving the refractive indices...Show More

Polarization-insensitive optical amplifier with tensile-strained-barrier MQW structure

K. Magari;M. Okamoto;Y. Suzuki;K. Sato;Y. Noguchi;O. Mikami

IEEE Journal of Quantum Electronics

Year: 1994 | Volume: 30, Issue: 3 | Journal Article |

A low-drive-voltage, high-speed monolithic multiple-quantum-well modulator/DFB laser light source

I. Kotaka;K. Wakita;M. Okamoto;H. Asai;Y. Kondo

IEEE Photonics Technology Letters

Year: 1993 | Volume: 5, Issue: 1 | Journal Article |

Cited by: Papers (24)

A high-speed InGaAs/InAlAs multiple-quantum-well (MQW) intensity modulator and an InGaAsP/InGaAs MQW distributed feedback laser were monolithically integrated by using a hybrid growth technique combining molecular beam epitaxy and metalorganic vapor phase epitaxy. An operating drive voltage of only 2.0 V, a 20-dB on/off ratio, and a 3-dB bandwidth greater than 15 GHz were obtained. This device ope...Show More

A low-drive-voltage, high-speed monolithic multiple-quantum-well modulator/DFB laser light source

I. Kotaka;K. Wakita;M. Okamoto;H. Asai;Y. Kondo

IEEE Photonics Technology Letters

Year: 1993 | Volume: 5, Issue: 1 | Journal Article |

High-speed and low-drive-voltage monolithic multiple quantum-well modulator/DFB laser light source

K. Wakita;I. Kotaka;H. Asai;M. Okamoto;Y. Kondo;M. Naganuma

IEEE Photonics Technology Letters

Year: 1992 | Volume: 4, Issue: 1 | Journal Article |

Cited by: Papers (27)

Monolithic integration of an InGaAsP/InGaAs multiple quantum well (MQW) distributed-feedback (DFB) laser with a high-speed InGaAs/InAlAs MQW intensity modulator is demonstrated. A 3-dB bandwidth. in excess of 16 GHz and low-drive-voltage operation (4.0 V) for a 20-dB on-off ratio are obtained. Good coupling efficiency between an MQW DFB laser and an MQW modulator is accomplished using hybrid cryst...Show More

High-speed and low-drive-voltage monolithic multiple quantum-well modulator/DFB laser light source

K. Wakita;I. Kotaka;H. Asai;M. Okamoto;Y. Kondo;M. Naganuma

IEEE Photonics Technology Letters

Year: 1992 | Volume: 4, Issue: 1 | Journal Article |

TM mode gain enhancement in GaInAs-InP lasers with tensile strained-layer superlattice

M. Okamoto;K. Sato;H. Mawatari;F. Kano;K. Magari;Y. Kondo;Y. Itaya

IEEE Journal of Quantum Electronics

Year: 1991 | Volume: 27, Issue: 6 | Journal Article |

Cited by: Papers (24) | Patents (2)

A novel tensile strained barrier (TSB) structure is proposed as the active layer to enhance the transverse-magnetic (TM) mode gain in long wavelength laser diodes. The band diagram of the TSB structure is described theoretically and experimentally. The gain difference between transverse-electric (TE) and TM modes is discussed for layers with various strain values and well layer thicknesses. The ch...

First Page of the Article

TM mode gain enhancement in GaInAs-InP lasers with tensile strained-layer superlattice

M. Okamoto;K. Sato;H. Mawatari;F. Kano;K. Magari;Y. Kondo;Y. Itaya

IEEE Journal of Quantum Electronics

Year: 1991 | Volume: 27, Issue: 6 | Journal Article |

1.55 mu m polarization-insensitive high-gain tensile-strained-barrier MQW optical amplifier

K. Magari;M. Okamoto;Y. Noguchi

IEEE Photonics Technology Letters

Year: 1991 | Volume: 3, Issue: 11 | Journal Article |

Cited by: Papers (77) | Patents (7)

A polarization-insensitive semiconductor optical amplifier was realized at a wavelength of 1.55 mu m. The active layer consisted of a tensile-strained-barrier multiple quantum well (MQW) structure. At a driving current of 150 mA, no dependence of the saturation characteristics on modes was obtained. The saturation output power at which the gain decreases 3 dB is 13.3 dBm. A slightly higher saturat...

First Page of the Article

1.55 mu m polarization-insensitive high-gain tensile-strained-barrier MQW optical amplifier

K. Magari;M. Okamoto;Y. Noguchi

IEEE Photonics Technology Letters

Year: 1991 | Volume: 3, Issue: 11 | Journal Article |

Tm-mode gain enhancement in InGaAs/InP lasers with tensile strained-layer superlattice

K. Sato;M. Okamoto;H. Mawatari;F. Kano;K. Magari;Y. ltaya

12th IEEE International Conference on Semiconductor Laser

Year: 1990 | Conference Paper |

Cited by: Patents (2)

We present TM-mode gain enhancement of strained-layer superlattice (SLS) lasers and its application for a polarization-insensitive laser amplifier.

First Page of the Article

Tm-mode gain enhancement in InGaAs/InP lasers with tensile strained-layer superlattice

K. Sato;M. Okamoto;H. Mawatari;F. Kano;K. Magari;Y. ltaya

12th IEEE International Conference on Semiconductor Laser

Year: 1990 | Conference Paper |

Polarization insensitive traveling wave type amplifier using strained multiple quantum well structure

K. Magari;M. Okamoto;H. Yasaka;K. Sato;Y. Noguchi;O. Mikami

IEEE Photonics Technology Letters

Year: 1990 | Volume: 2, Issue: 8 | Journal Article |

Cited by: Papers (56) | Patents (6)

Signal gain agreement between TE and TM modes is realized under a specific operation condition in a traveling wave type amplifier using a strained multiple quantum well structure for the first time. The signal gain of the TM mode completely agrees with that of the TE mode at an amplifier driving current of 70 mA. The identical signal gain is 7.5 dB at present. However, the signal gain could be eas...Show More

Polarization insensitive traveling wave type amplifier using strained multiple quantum well structure

K. Magari;M. Okamoto;H. Yasaka;K. Sato;Y. Noguchi;O. Mikami

IEEE Photonics Technology Letters

Year: 1990 | Volume: 2, Issue: 8 | Journal Article |

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