Christopher E. D. Chidsey - IEEE Xplore Author Profile

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We demonstrate a novel phase change memory cell utilizing doped Ge nanowire pn-junction diode both as a bottom electrode and a memory cell selection device. This memory cell can be used for a cross-point memory array with diode selection. Using selective growth of isolated vertical nanowires in each cell, we have minimized the contact area below the lithography limit. A very low SET programming cu...Show More