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Yuan Zhang - IEEE Xplore Author Profile

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In this paper, we demonstrate a novel phase-change memory cell utilizing a low-temperature in situ doped single crystalline germanium nanowire diode as a bottom electrode as well as a memory-cell selection device. The integrated memory cell shows promising characteristics such as low programming current, large set/reset resistance ratio, and rectifying behavior, which is required for high-density ...Show More
Scalability is one of the most important properties of phase-change non-volatile memory. In this paper we review the scaling properties of ultra-thin films and phase change nanostructures investigated by time-resolved X-ray diffraction. Phase change nanostructures were fabricated by electron-beam lithography and diblock-copolymer self-assembly based lithography using sputter deposition and spin-on...Show More
We demonstrate a novel phase change memory cell utilizing doped Ge nanowire pn-junction diode both as a bottom electrode and a memory cell selection device. This memory cell can be used for a cross-point memory array with diode selection. Using selective growth of isolated vertical nanowires in each cell, we have minimized the contact area below the lithography limit. A very low SET programming cu...Show More