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Santanu Mahapatra - IEEE Xplore Author Profile
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Santanu Mahapatra

Also published under: S. Mahapatra

Publications
67
Citations
938
Publications by Year
20022020
Co-Authors:
Show All Co-Authors (56)
Image of author Santanu Mahapatra

Santanu Mahapatra

Also published under: S. Mahapatra

Affiliation

Department of Electronic Systems Engineering
Indian Institute of Science Bangalore
Bangalore, India

Publication Topics

Biography

Santanu Mahapatra (M’08–SM’10) received the Ph.D. degree from the Ecole Polytechnique Federale de Lausanne, Lausanne, Switzerland, in 2005.,He is currently a Professor with the Indian Institute of Science, Bengaluru, India. His current research interests include multiscale approach in nanoelectronic device modeling.,Dr. Mahapatra was a recipient of the Ramanna Fellowship from the Department of Science and Technology, Government of India, for his contribution in compact modeling, in 2012.(Based on document published on 23 January 2018).
Publications
67
Citations
938
Publications by Year
20022020
Co-Authors:
Show All Co-Authors (56)
Author's Published Works

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First Principles Based Compact Model for 2D-Channel MOSFETs

Biswapriyo Das;Santanu Mahapatra

2020 International Symposium on Devices, Circuits and Systems (ISDCS)
Year: 2020 | Conference Paper |
Cited by: Papers (1)
We propose a generalized compact model for any two-dimensional material channel-based metal-oxide-semiconductor field-effect transistors. Unlike existing ones, the proposed model is first principles based and thus has ability to predict the circuit performance only using the crystallographic information of the channel material. It is `core' in nature and developed following the industry-standard d...Show More

First Principles Based Compact Model for 2D-Channel MOSFETs

Biswapriyo Das;Santanu Mahapatra

Year: 2020 | Conference Paper |

Extraction of Trench Capacitance and Reverse Recovery Time of InGaAs Self-Switching Diode

Sahil Garg;Bipan Kaushal;Sanjeev Kumar;Shahrir Rizal Kasjoo;Santanu Mahapatra;Arun K. Singh

IEEE Transactions on Nanotechnology
Year: 2019 | Volume: 18 | Journal Article |
Cited by: Papers (9)
In this paper, we have presented the transient analysis of an InGaAs based novel nano diode called self-switching device utilizing Silvaco TCAD simulator. The device exhibits current-voltage (I-V) characteristics analogous to a conventional diode without requiring any p-n junction. The cut-in voltage and the output current of the device can be tuned by varying channel width and length, respectivel...Show More

Extraction of Trench Capacitance and Reverse Recovery Time of InGaAs Self-Switching Diode

Sahil Garg;Bipan Kaushal;Sanjeev Kumar;Shahrir Rizal Kasjoo;Santanu Mahapatra;Arun K. Singh

Year: 2019 | Volume: 18 | Journal Article |

Insights on Anisotropic Dissipative Quantum Transport in n-Type Phosphorene MOSFET

Madhuchhanda Brahma;Arnab Kabiraj;Santanu Mahapatra

2019 32nd International Conference on VLSI Design and 2019 18th International Conference on Embedded Systems (VLSID)
Year: 2019 | Conference Paper |
Cited by: Papers (1)
We study the quantum dissipative transport in Phosphorene n-type metal oxide semiconductor field effect transistor (MOSFET) in armchair and zigzag directions. The transport equations are solved quantum mechanically under the nonequilibrium Green's function (NEGF) formalism and relies on a single-band effective mass Hamiltonian. The treatment of electron phonon scattering is done under the self con...Show More

Insights on Anisotropic Dissipative Quantum Transport in n-Type Phosphorene MOSFET

Madhuchhanda Brahma;Arnab Kabiraj;Santanu Mahapatra

Year: 2019 | Conference Paper |

Parametric Optimization of Self-Switching Diode

Sahil Garg;Bipan Kaushal;Arun K. Singh;Sanjeev Kumar;Santanu Mahapatra

2018 IEEE 13th Nanotechnology Materials and Devices Conference (NMDC)
Year: 2018 | Conference Paper |
Cited by: Papers (3)
Parametric optimization of a novel nano diode called self-switching device has been demonstrated using Silvaco TCAD simulator. The device exhibits non-linear characteristics analogous to a conventional diode without requiring any p-n junction. The cut-in voltage can be tuned by varying channel width of the device. The increase in channel doping concentration exhibits velocity saturation, hence, le...Show More

Parametric Optimization of Self-Switching Diode

Sahil Garg;Bipan Kaushal;Arun K. Singh;Sanjeev Kumar;Santanu Mahapatra

Year: 2018 | Conference Paper |

New Asymmetric Atomistic Model for the Analysis of Phase-Engineered MoS2-Gold Top Contact

Richa Chakravarty;Dipankar Saha;Santanu Mahapatra

2018 31st International Conference on VLSI Design and 2018 17th International Conference on Embedded Systems (VLSID)
Year: 2018 | Conference Paper |
Cited by: Papers (2)
Realizing low contact resistance at source/drain is one of the key challenges for obtaining high ON-current in 2D (two dimensional)-material channel based Metal-Oxide-Semiconductor transistors. In order to form ultra-low resistance contacts, the experimental techniques which involve inducing local metallic phases in the usual semiconducting MoS2 crystal, have attracted much attention. Howbeit, the...Show More

New Asymmetric Atomistic Model for the Analysis of Phase-Engineered MoS2-Gold Top Contact

Richa Chakravarty;Dipankar Saha;Santanu Mahapatra

Year: 2018 | Conference Paper |

Compact Model for Low Effective Mass Channel Common Double-Gate MOSFET

Ananda Sankar Chakraborty;Santanu Mahapatra

IEEE Transactions on Electron Devices
Year: 2018 | Volume: 65, Issue: 3 | Journal Article |
Cited by: Papers (10)
In the spirit of quantum drift-diffusion formalism, we propose a core compact model for low-effective mass channel common double-gate MOSFET. In contrast to the existing models, carriers in each subband are treated to be in locally thermal equilibrium within that subband, but not with the carriers in a different subband. We observe quasi-linear relationship between energy eigenvalue, quasi-Fermi l...Show More

Compact Model for Low Effective Mass Channel Common Double-Gate MOSFET

Ananda Sankar Chakraborty;Santanu Mahapatra

Year: 2018 | Volume: 65, Issue: 3 | Journal Article |

Germanane MOSFET for Subdeca Nanometer High-Performance Technology Nodes

Madhuchhanda Brahma;Marc Bescond;Demetrio Logoteta;Ram krishna Ghosh;Santanu Mahapatra

IEEE Transactions on Electron Devices
Year: 2018 | Volume: 65, Issue: 3 | Journal Article |
Cited by: Papers (5)
Ballistic transport in monolayer Germanane MOSFETs is investigated for high-performance (HP) applications. Characteristics of both n- and p-type transistors having channel lengths of 7, 5, and 3 nm are studied and compared against the International Technology Roadmap for Semiconductor (ITRS) target of 2028. Our simulation approach is based on a self-consistent quantum ballistic transport model wit...Show More

Germanane MOSFET for Subdeca Nanometer High-Performance Technology Nodes

Madhuchhanda Brahma;Marc Bescond;Demetrio Logoteta;Ram krishna Ghosh;Santanu Mahapatra

Year: 2018 | Volume: 65, Issue: 3 | Journal Article |

Asymmetric Junctions in Metallic–Semiconducting–Metallic Heterophase MoS2

Dipankar Saha;Santanu Mahapatra

IEEE Transactions on Electron Devices
Year: 2017 | Volume: 64, Issue: 5 | Journal Article |
Cited by: Papers (16)
Symmetry of the source-channel and drain-channel junction is a unique property of a metal-oxide-semiconductor field effect transistor (MOSFET), which needs to be preserved while realizing sub-decananometer channel length devices using advanced technology. Employing experimental-findings-driven atomistic modeling techniques, we demonstrate that such symmetry might not be preserved in an atomically ...Show More

Asymmetric Junctions in Metallic–Semiconducting–Metallic Heterophase MoS2

Dipankar Saha;Santanu Mahapatra

Year: 2017 | Volume: 64, Issue: 5 | Journal Article |

Surface Potential Equation for Low Effective Mass Channel Common Double-Gate MOSFET

Ananda Sankar Chakraborty;Santanu Mahapatra

IEEE Transactions on Electron Devices
Year: 2017 | Volume: 64, Issue: 4 | Journal Article |
Cited by: Papers (11)
Formulation of accurate yet computationally efficient surface potential equation (SPE) is the fundamental step toward developing compact models for low effective mass channel quantum well MOSFETs. In this paper, we propose a new SPE for such devices considering multisubband electron occupancy and oxide thickness asymmetry. Unlike the previous attempts, here, we adopt purely physical modeling appro...Show More

Surface Potential Equation for Low Effective Mass Channel Common Double-Gate MOSFET

Ananda Sankar Chakraborty;Santanu Mahapatra

Year: 2017 | Volume: 64, Issue: 4 | Journal Article |

indDG: A new compact model for common double gate MOSFET adapted to gate oxide thickness asymmetry

Chethan Kumar;Neha Sharan;Santanu Mahapatra

2015 IEEE International Conference on Electronics, Computing and Communication Technologies (CONECCT)
Year: 2015 | Conference Paper |
Here, we present a surface potential based compact model for common double gate MOSFET (indDG) along with implementation results. The model includes core model, intrinsic model (Short Geometry effects and Non-quasi static effect) and noise model for asymmetric common double gate (CDG) MOSFET. The existing models for CDG MOSFET are developed for device with symmetric oxide thickness across both the...Show More

indDG: A new compact model for common double gate MOSFET adapted to gate oxide thickness asymmetry

Chethan Kumar;Neha Sharan;Santanu Mahapatra

Year: 2015 | Conference Paper |

Theoretical Insights to Niobium-Doped Monolayer MoS2–Gold Contact

Anuja Chanana;Santanu Mahapatra

IEEE Transactions on Electron Devices
Year: 2015 | Volume: 62, Issue: 7 | Journal Article |
Cited by: Papers (15)
We report a first principles study of the electronic properties for a contact formed between Nb-doped monolayer MoS2 and gold for different doping concentrations. We first focus on the shift of energy levels in band structure and the density of states with respect to the Fermi level for a geometrically optimized 5 × 5 MoS2 supercell for both pristine and Nb-doped structures. The doping is achieved...Show More

Theoretical Insights to Niobium-Doped Monolayer MoS2–Gold Contact

Anuja Chanana;Santanu Mahapatra

Year: 2015 | Volume: 62, Issue: 7 | Journal Article |

Effect of Line Defects on the Electrical Transport Properties of Monolayer MoS $_{\bf 2}$ Sheet

Amretashis Sengupta;Dipankar Saha;Thomas A. Niehaus;Santanu Mahapatra

IEEE Transactions on Nanotechnology
Year: 2015 | Volume: 14, Issue: 1 | Journal Article |
Cited by: Papers (15)
We present a computational study on the impact of line defects on the electronic properties of monolayer MoS2. Four different kinds of line defects with Mo and S as the bridging atoms, consistent with recent theoretical and experimental observations, are considered herein. We employ the density functional tightbinding (DFTB) method with a Slater-Koster-type DFTB-CP2K basis set for evaluating the m...Show More

Effect of Line Defects on the Electrical Transport Properties of Monolayer MoS $_{\bf 2}$ Sheet

Amretashis Sengupta;Dipankar Saha;Thomas A. Niehaus;Santanu Mahapatra

Year: 2015 | Volume: 14, Issue: 1 | Journal Article |

Modeling of sheet-concentration and temperature-dependent resistivity of a suspended monolayer graphene

Dipankar Saha;Sitangshu Bhattacharya;Santanu Mahapatra

2014 IEEE 2nd International Conference on Emerging Electronics (ICEE)
Year: 2014 | Conference Paper |
In this paper, we address a simplified physics-based analytical model for the temperature - as well as the sheet-concentration-dependent resistivity of the free-standing monolayer graphene sheet. The analytical solution is achieved through the formulation of the sheet-concentration as the function of the external current. To determine the temperature-and sheet-concentration-dependent resistivity o...Show More

Modeling of sheet-concentration and temperature-dependent resistivity of a suspended monolayer graphene

Dipankar Saha;Sitangshu Bhattacharya;Santanu Mahapatra

Year: 2014 | Conference Paper |

A Continuous Electrical Conductivity Model for Monolayer Graphene From Near Intrinsic to Far Extrinsic Region

Sitangshu Bhattacharya;Dipankar Saha;Aveek Bid;Santanu Mahapatra

IEEE Transactions on Electron Devices
Year: 2014 | Volume: 61, Issue: 11 | Journal Article |
Cited by: Papers (3)
We present a closed-form continuous model for the electrical conductivity of a single layer graphene (SLG) sheet in the presence of short-range impurities, long-range screened impurities, and acoustic phonons. The validity of the model extends from very low doping levels (chemical potential close to the Dirac cone vertex) to very high doping levels. We demonstrate complete functional relations of ...Show More

A Continuous Electrical Conductivity Model for Monolayer Graphene From Near Intrinsic to Far Extrinsic Region

Sitangshu Bhattacharya;Dipankar Saha;Aveek Bid;Santanu Mahapatra

Year: 2014 | Volume: 61, Issue: 11 | Journal Article |

A Short-Channel Common Double-Gate MOSFET Model Adapted to Gate Oxide Thickness Asymmetry

Neha Sharan;Santanu Mahapatra

IEEE Transactions on Electron Devices
Year: 2014 | Volume: 61, Issue: 8 | Journal Article |
Cited by: Papers (11)
Existing compact models for common double-gate (CDG) MOSFETs are based on the fundamental assumption of having symmetric gate oxide thickness. In this paper, we demonstrate that using the unique quasi-linear relationship between the surface potentials, it is possible to develop compact model for CDG-MOSFETs without such approximation while preserving the mathematical complexity at the same level o...Show More

A Short-Channel Common Double-Gate MOSFET Model Adapted to Gate Oxide Thickness Asymmetry

Neha Sharan;Santanu Mahapatra

Year: 2014 | Volume: 61, Issue: 8 | Journal Article |

Germanane: A Low Effective Mass and High Bandgap 2-D Channel Material for Future FETs

Ram Krishna Ghosh;Madhuchhanda Brahma;Santanu Mahapatra

IEEE Transactions on Electron Devices
Year: 2014 | Volume: 61, Issue: 7 | Journal Article |
Cited by: Papers (30)
We investigate the electronic properties of Germanane and analyze its importance as 2-D channel material in switching devices. Considering two types of morphologies, namely, chair and boat, we study the real band structure, the effective mass variation, and the complex band structure of unstrained Germanane by density-functional theory. The chair morphology turns out to be a more effective channel...Show More

Germanane: A Low Effective Mass and High Bandgap 2-D Channel Material for Future FETs

Ram Krishna Ghosh;Madhuchhanda Brahma;Santanu Mahapatra

Year: 2014 | Volume: 61, Issue: 7 | Journal Article |

Small Signal Nonquasi-static Model for Common Double-Gate MOSFETs Adapted to Gate Oxide Thickness Asymmetry

Neha Sharan;Santanu Mahapatra

2014 27th International Conference on VLSI Design and 2014 13th International Conference on Embedded Systems
Year: 2014 | Conference Paper |
We present a physics-based closed form small signal Nonquasi-static (NQS) model for a long channel Common Double Gate MOSFET (CDG) by taking into account the asymmetry that may prevail between the gate oxide thickness. We use the unique quasi-linear relationship between the surface potentials along the channel to solve the governing continuity equation (CE) in order to develop the analytical expre...Show More

Small Signal Nonquasi-static Model for Common Double-Gate MOSFETs Adapted to Gate Oxide Thickness Asymmetry

Neha Sharan;Santanu Mahapatra

Year: 2014 | Conference Paper |

Monolayer Transition Metal Dichalcogenide Channel-Based Tunnel Transistor

Ram Krishna Ghosh;Santanu Mahapatra

IEEE Journal of the Electron Devices Society
Year: 2013 | Volume: 1, Issue: 10 | Journal Article |
Cited by: Papers (70)
We investigate the gate controlled direct band-to-band tunneling (BTBT) current in monolayer transition-metal dichalcogenide (MX2) channel-based tunnel field effect transistor (TFET). Five MX2 materials (MoS2,MoSe2,MoTe2,WS2,WSe2) in their 2-D sheet forms are considered for this purpose. We first study the real and imaginary band structure of those MX2 materials by density-functional theory (DFT),...Show More

Monolayer Transition Metal Dichalcogenide Channel-Based Tunnel Transistor

Ram Krishna Ghosh;Santanu Mahapatra

Year: 2013 | Volume: 1, Issue: 10 | Journal Article |

Solution of Time Dependent Joule Heat Equation for a Graphene Sheet Under Thomson Effect

Rekha Verma;Sitangshu Bhattacharya;Santanu Mahapatra

IEEE Transactions on Electron Devices
Year: 2013 | Volume: 60, Issue: 10 | Journal Article |
Cited by: Papers (2)
We address a physics-based solution of joule heating phenomenon in a single-layer graphene (SLG) sheet under the presence of Thomson effect. We demonstrate that the temperature in an isotopically pure (containing only C12) SLG sheet attains its saturation level quicker than when doped with its isotopes (C13). From the solution of the joule heating equation, we find that the thermal time constant o...Show More

Solution of Time Dependent Joule Heat Equation for a Graphene Sheet Under Thomson Effect

Rekha Verma;Sitangshu Bhattacharya;Santanu Mahapatra

Year: 2013 | Volume: 60, Issue: 10 | Journal Article |

Performance Analysis of Strained Monolayer ${\rm MoS}_{2}$ MOSFET

Amretashis Sengupta;Ram Krishna Ghosh;Santanu Mahapatra

IEEE Transactions on Electron Devices
Year: 2013 | Volume: 60, Issue: 9 | Journal Article |
Cited by: Papers (32)
We present a computational study on the impact of tensile/compressive uniaxial (εxx) and biaxial (εxx=εyy) strain on monolayer MoS2, n-, and p-MOSFETs. The material properties like band structure, carrier effective mass, and the multiband Hamiltonian of the channel are evaluated using the density functional theory. Using these parameters, self-consistent Poisson-Schrödinger solution under the none...Show More

Performance Analysis of Strained Monolayer ${\rm MoS}_{2}$ MOSFET

Amretashis Sengupta;Ram Krishna Ghosh;Santanu Mahapatra

Year: 2013 | Volume: 60, Issue: 9 | Journal Article |

Proposal for Graphene–Boron Nitride Heterobilayer-Based Tunnel FET

Ram Krishna Ghosh;Santanu Mahapatra

IEEE Transactions on Nanotechnology
Year: 2013 | Volume: 12, Issue: 5 | Journal Article |
Cited by: Papers (9)
We investigate the gate-controlled direct band-to-band tunneling (BTBT) current in a graphene-boron nitride (G-BN) heterobilayer channel-based tunnel field effect transistor. We first study the imaginary band structure of hexagonal and Bernal-stacked heterobilayers by density functional theory, which is then used to evaluate the gate-controlled current under the Wentzel-Kramers-Brillouin approxima...Show More

Proposal for Graphene–Boron Nitride Heterobilayer-Based Tunnel FET

Ram Krishna Ghosh;Santanu Mahapatra

Year: 2013 | Volume: 12, Issue: 5 | Journal Article |

Modeling of Temperature and Field-Dependent Electron Mobility in a Single-Layer Graphene Sheet

Rekha Verma;Sitangshu Bhattacharya;Santanu Mahapatra

IEEE Transactions on Electron Devices
Year: 2013 | Volume: 60, Issue: 8 | Journal Article |
Cited by: Papers (10)
In this paper, we address a physics-based analytical model of electric-field-dependent electron mobility (μ) in a single-layer graphene sheet using the formulation of Landauer and Mc Kelvey's carrier flux approach under finite temperature and quasi-ballistic regime. The energy-dependent, near-elastic scattering rate of in-plane and out-of-plane (flexural) phonons with the electrons are considered ...Show More

Modeling of Temperature and Field-Dependent Electron Mobility in a Single-Layer Graphene Sheet

Rekha Verma;Sitangshu Bhattacharya;Santanu Mahapatra

Year: 2013 | Volume: 60, Issue: 8 | Journal Article |

Nonquasi-Static Charge Model for Common Double-Gate MOSFETs Adapted to Gate Oxide Thickness Asymmetry

Neha Sharan;Santanu Mahapatra

IEEE Transactions on Electron Devices
Year: 2013 | Volume: 60, Issue: 7 | Journal Article |
Cited by: Papers (8)
With the unique quasi-linear relationship between the surface potentials along the channel, recently we have proposed a quasi-static terminal charge model for common double-gate MOSFETs, which might have asymmetric gate oxide thickness. In this brief, we extend this concept to develop the nonquasi-static (NQS) charge model for the same by solving the governing continuity equations. The proposed NQ...Show More

Nonquasi-Static Charge Model for Common Double-Gate MOSFETs Adapted to Gate Oxide Thickness Asymmetry

Neha Sharan;Santanu Mahapatra

Year: 2013 | Volume: 60, Issue: 7 | Journal Article |

Thermoelectric Performance of a Single-Layer Graphene Sheet for Energy Harvesting

Rekha Verma;Sitangshu Bhattacharya;Santanu Mahapatra

IEEE Transactions on Electron Devices
Year: 2013 | Volume: 60, Issue: 6 | Journal Article |
Cited by: Papers (17)
We investigate the thermoelectric (TE) figure-of-merit of a single-layer graphene (SLG) sheet by a physics-based analytical technique. We first develop analytical models of electrical and thermal resistances and the Seebeck coefficient of SLG by considering electron interactions with the in-plane and flexural phonons. Using those models, we show that both the figure-of-merit and the TE efficiency ...Show More

Thermoelectric Performance of a Single-Layer Graphene Sheet for Energy Harvesting

Rekha Verma;Sitangshu Bhattacharya;Santanu Mahapatra

Year: 2013 | Volume: 60, Issue: 6 | Journal Article |

Physics-Based Solution for Electrical Resistance of Graphene Under Self-Heating Effect

Rekha Verma;Sitangshu Bhattacharya;Santanu Mahapatra

IEEE Transactions on Electron Devices
Year: 2013 | Volume: 60, Issue: 1 | Journal Article |
Cited by: Papers (5)
In this brief, we present a physics-based solution for the temperature-dependent electrical resistance of a suspended metallic single-layer graphene (SLG) sheet under Joule self-heating. The effect of in-plane and flexural phonons on the electron scattering rates for a doped SLG layer has been considered, which particularly demonstrates the variation of the electrical resistance with increasing te...Show More

Physics-Based Solution for Electrical Resistance of Graphene Under Self-Heating Effect

Rekha Verma;Sitangshu Bhattacharya;Santanu Mahapatra

Year: 2013 | Volume: 60, Issue: 1 | Journal Article |

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