Insights on Anisotropic Dissipative Quantum Transport in n-Type Phosphorene MOSFET

We study the quantum dissipative transport in Phosphorene n-type metal oxide semiconductor field effect transistor (MOSFET) in armchair and zigzag directions. The transport equations are solved quantum mechanically under the nonequilibrium Green's function (NEGF) formalism and relies on a single-band effective mass Hamiltonian. The treatment of electron phonon scattering is done under the self consistent Born approximation (SCBA). We investigate in detail the effect of different acoustic and optical phonon modes on the drain current of the device for different channel lengths. We show that optical phonon mode with a deformation potential constant of 8.07x10^8 eV/cm and energy 0.0421 eV plays the most important role in electron phonon scattering and subsequent degradation of ON current in devices along both directions. We also find that effect of electron phonon scattering is more pronounced along zigzag direction.

I. Introduction

Over the past few years, the field of semiconductor science and technology has witnessed extensive research on atomically thin two dimensional (2D) layered materials. The properties of these materials as well as their potential applications for transistor technologies are being studied both experimentally and theoretically. Most of these 2D materials e.g. hBN, Phosphorene, transition metal di-chalcogenides (TMD), such as MoS₂, WS₂, MoSe₂, WSe₂, MoTe₂ [1]–[6] are being extensively explored as an alternative channel material for metal oxide semiconductor field effect transistor (MOSFET), in order to meet the Moore's law projections.