I. Introduction
Over the past few years, the field of semiconductor science and technology has witnessed extensive research on atomically thin two dimensional (2D) layered materials. The properties of these materials as well as their potential applications for transistor technologies are being studied both experimentally and theoretically. Most of these 2D materials e.g. hBN, Phosphorene, transition metal di-chalcogenides (TMD), such as MoS2, WS2, MoSe2, WSe2, MoTe2 [1]–[6] are being extensively explored as an alternative channel material for metal oxide semiconductor field effect transistor (MOSFET), in order to meet the Moore's law projections.