I. Introduction
Among the various classes of alternate channel materials under research, the 2-D materials having nonzero bandgap in their sheet form like the transition metal dichalcogenides (, W; , Se, and Te) seem very promising for MOSFET applications. This is due to their better electrostatic integrity, optical transparency, mechanical flexibility, and the geometrical compatibility with the standard planar CMOS technology. Among such materials the performance of -based MOS transistor and logic have been successfully demonstrated experimentally [1], [2]. This has generated great interest in studying such nongraphene 2-D crystals for future MOSFET channel application [3]–[5].