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Performance Analysis of Strained Monolayer - MOSFET | IEEE Journals & Magazine | IEEE Xplore

Performance Analysis of Strained Monolayer {\rm MoS}_{2} MOSFET


Abstract:

We present a computational study on the impact of tensile/compressive uniaxial (εxx) and biaxial (εxx=εyy) strain on monolayer MoS2, n-, and p-MOSFETs. The material prope...Show More

Abstract:

We present a computational study on the impact of tensile/compressive uniaxial (εxx) and biaxial (εxxyy) strain on monolayer MoS2, n-, and p-MOSFETs. The material properties like band structure, carrier effective mass, and the multiband Hamiltonian of the channel are evaluated using the density functional theory. Using these parameters, self-consistent Poisson-Schrödinger solution under the nonequilibrium Green's function formalism is carried out to simulate the MOS device characteristics. 1.75% uniaxial tensile strain is found to provide a minor (6%) ON current improvement for the n-MOSFET, whereas same amount of biaxial tensile strain is found to considerably improve the p-MOSFET ON currents by 2-3 times. Compressive strain, however, degrades both n-MOS and p-MOS devices performance. It is also observed that the improvement in p-MOSFET can be attained only when the channel material becomes indirect gap in nature. We further study the performance degradation in the quasi-ballistic long-channel regime using a projected current method.
Published in: IEEE Transactions on Electron Devices ( Volume: 60, Issue: 9, September 2013)
Page(s): 2782 - 2787
Date of Publication: 26 July 2013

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I. Introduction

Among the various classes of alternate channel materials under research, the 2-D materials having nonzero bandgap in their sheet form like the transition metal dichalcogenides (, W; , Se, and Te) seem very promising for MOSFET applications. This is due to their better electrostatic integrity, optical transparency, mechanical flexibility, and the geometrical compatibility with the standard planar CMOS technology. Among such materials the performance of -based MOS transistor and logic have been successfully demonstrated experimentally [1], [2]. This has generated great interest in studying such nongraphene 2-D crystals for future MOSFET channel application [3]–[5].

Cites in Papers - |

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