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Hyunhak Jeong

Affiliation

Mechatronics Research

Samsung Electronics Co.

Ltd., Hwaseong-si, South Korea

Publication Topics

Publications

Citations

Publications by Year

20232023

Co-Authors:

Author's Published Works

Showing 1-25 of 94 results

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Imprinted Antiferroelectric with Low Damage Process for High Performance Negative Capacitance NAND Flash Memory

Sangho Lee;Giuk Kim;Yunseok Nam;Yeongseok Jeong;Taeho Kim;Hunbeom Shin;Sangmok Lee;Jinho Ahn;Sanghun Jeon

IEEE Electron Device Letters

Year: 2025 | Early Access Article |

Imprinted Antiferroelectric with Low Damage Process for High Performance Negative Capacitance NAND Flash Memory

Sangho Lee;Giuk Kim;Yunseok Nam;Yeongseok Jeong;Taeho Kim;Hunbeom Shin;Sangmok Lee;Jinho Ahn;Sanghun Jeon

IEEE Electron Device Letters

Year: 2025 | Early Access Article |

Oxide Channel Ferroelectric NAND Device with Source-Tied Covering Metal Structure: Wide Memory Window (14.3 V), Reliable Retention (> 10 Years) and Disturbance Immunity $(\Delta \mathrm{V}_{\text{th}}\leq 0.1\mathrm{V})$ for QLC Operation

Hongrae Joh;Giuk Kim;Jihye Ock;Seungyeob Kim;Sangmok Lee;Sangho Lee;Kwangsoo Kim;Suhwan Lim;Jongho Woo;Wanki Kim;Daewon Ha;Jinho Ahn;Sanghun Jeon

2024 IEEE International Electron Devices Meeting (IEDM)

Year: 2024 | Conference Paper |

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Oxide Channel Ferroelectric NAND Device with Source-Tied Covering Metal Structure: Wide Memory Window (14.3 V), Reliable Retention (> 10 Years) and Disturbance Immunity $(\Delta \mathrm{V}_{\text{th}}\leq 0.1\mathrm{V})$ for QLC Operation

Hongrae Joh;Giuk Kim;Jihye Ock;Seungyeob Kim;Sangmok Lee;Sangho Lee;Kwangsoo Kim;Suhwan Lim;Jongho Woo;Wanki Kim;Daewon Ha;Jinho Ahn;Sanghun Jeon

2024 IEEE International Electron Devices Meeting (IEDM)

Year: 2024 | Conference Paper |

Design Methodology for Low-Voltage Operational (≤1 V) FRAM Cell Capacitors and Approaches for Overcoming Disturb Issues in 1T-nC Arrays: Experimental & Modeling

Sangho Lee;Giuk Kim;Chaeheon Kim;Yangjin Jung;Jeonghyun Hwang;Yunseok Nam;Mincheol Shin;Youngin Goh;Mintae Ryu;Jihye Suh;Kilho Lee;Wanki Kim;Daewon Ha;Jinho Ahn;Sanghun Jeon

2024 IEEE International Electron Devices Meeting (IEDM)

Year: 2024 | Conference Paper |

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Design Methodology for Low-Voltage Operational (≤1 V) FRAM Cell Capacitors and Approaches for Overcoming Disturb Issues in 1T-nC Arrays: Experimental & Modeling

Sangho Lee;Giuk Kim;Chaeheon Kim;Yangjin Jung;Jeonghyun Hwang;Yunseok Nam;Mincheol Shin;Youngin Goh;Mintae Ryu;Jihye Suh;Kilho Lee;Wanki Kim;Daewon Ha;Jinho Ahn;Sanghun Jeon

2024 IEEE International Electron Devices Meeting (IEDM)

Year: 2024 | Conference Paper |

Unveiling the Origin of Disturbance in FeFET and the Potential of Multifunctional TiO2 as a Breakthrough for Disturb-Free 3D NAND Cell: Experimental and Modeling

Giuk Kim;Hyunjun Kang;Sangho Lee;Hyojun Choi;Yangjin Jung;Mincheol Shin;Kwangsoo Kim;Suhwan Lim;Jongho Woo;Wanki Kim;Daewon Ha;Jinho Ahn;Sanghun Jeon

2024 IEEE International Electron Devices Meeting (IEDM)

Year: 2024 | Conference Paper |

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Unveiling the Origin of Disturbance in FeFET and the Potential of Multifunctional TiO2 as a Breakthrough for Disturb-Free 3D NAND Cell: Experimental and Modeling

Giuk Kim;Hyunjun Kang;Sangho Lee;Hyojun Choi;Yangjin Jung;Mincheol Shin;Kwangsoo Kim;Suhwan Lim;Jongho Woo;Wanki Kim;Daewon Ha;Jinho Ahn;Sanghun Jeon

2024 IEEE International Electron Devices Meeting (IEDM)

Year: 2024 | Conference Paper |

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The Effect of Ferroelectric/Dielectric Capacitance Ratio on Short-Term Retention Characteristics of MFMIS FeFET

Junghyeon Hwang;Giuk Kim;Hongrae Joh;Jinho Ahn;Sanghun Jeon

IEEE Journal of the Electron Devices Society

Year: 2024 | Volume: 12 | Journal Article |

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The Effect of Ferroelectric/Dielectric Capacitance Ratio on Short-Term Retention Characteristics of MFMIS FeFET

Junghyeon Hwang;Giuk Kim;Hongrae Joh;Jinho Ahn;Sanghun Jeon

IEEE Journal of the Electron Devices Society

Year: 2024 | Volume: 12 | Journal Article |

Kinetically Stabilized Hafnia Ferroelectric of Al-Doped HfO₂ Film by Fast Ramping and Fast Cooling Process

Lingwei Zhang;Giuk Kim;Sangho Lee;Hunbeom Shin;Youngjin Lim;Kang Kim;Il-Kwon Oh;Sang-Hee Ko Park;Jinho Ahn;Sanghun Jeon

IEEE Transactions on Electron Devices

Year: 2024 | Volume: 71, Issue: 12 | Journal Article |

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Kinetically Stabilized Hafnia Ferroelectric of Al-Doped HfO₂ Film by Fast Ramping and Fast Cooling Process

Lingwei Zhang;Giuk Kim;Sangho Lee;Hunbeom Shin;Youngjin Lim;Kang Kim;Il-Kwon Oh;Sang-Hee Ko Park;Jinho Ahn;Sanghun Jeon

IEEE Transactions on Electron Devices

Year: 2024 | Volume: 71, Issue: 12 | Journal Article |

Experimental Analysis on the Interaction Between Interface Trap Charges and Polarization on the Memory Window of Metal-Ferroelectric–Insulator-Si (MFIS) FeFET

Giuk Kim;Hyojun Choi;Sangho Lee;Hunbeom Shin;Sangmok Lee;Yunseok Nam;Hyunjun Kang;Seokjoong Shin;Hoon Kim;Youngjin Lim;Kang Kim;Il-Kwon Oh;Sang-Hee Ko Park;Jinho Ahn;Sanghun Jeon

IEEE Transactions on Electron Devices

Year: 2024 | Volume: 71, Issue: 11 | Journal Article |

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Experimental Analysis on the Interaction Between Interface Trap Charges and Polarization on the Memory Window of Metal-Ferroelectric–Insulator-Si (MFIS) FeFET

Giuk Kim;Hyojun Choi;Sangho Lee;Hunbeom Shin;Sangmok Lee;Yunseok Nam;Hyunjun Kang;Seokjoong Shin;Hoon Kim;Youngjin Lim;Kang Kim;Il-Kwon Oh;Sang-Hee Ko Park;Jinho Ahn;Sanghun Jeon

IEEE Transactions on Electron Devices

Year: 2024 | Volume: 71, Issue: 11 | Journal Article |

Positive Interaction Between Charge Trapping and Polarization Switching in Metal-Interlayer-Ferroelectric-Interlayer-Silicon (MIFIS) Ferroelectric Field-Effect Transistor

Hyojun Choi;Giuk Kim;Sangho Lee;Hunbeom Shin;Youngjin Lim;Kang Kim;Do-Hyung Kim;Il-Kwon Oh;Sang-Hee Ko Park;Jinho Ahn;Sanghun Jeon

IEEE Electron Device Letters

Year: 2024 | Volume: 45, Issue: 12 | Journal Article |

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Positive Interaction Between Charge Trapping and Polarization Switching in Metal-Interlayer-Ferroelectric-Interlayer-Silicon (MIFIS) Ferroelectric Field-Effect Transistor

Hyojun Choi;Giuk Kim;Sangho Lee;Hunbeom Shin;Youngjin Lim;Kang Kim;Do-Hyung Kim;Il-Kwon Oh;Sang-Hee Ko Park;Jinho Ahn;Sanghun Jeon

IEEE Electron Device Letters

Year: 2024 | Volume: 45, Issue: 12 | Journal Article |

In-depth Analysis of the Hafnia Ferroelectrics as a Key Enabler for Low Voltage & QLC 3D VNAND Beyond 1K Layers: Experimental Demonstration and Modeling

Giuk Kim;Hyojun Choi;Hunbeom Shin;Sangho Lee;Sangmok Lee;Yunseok Nam;Minhyun Jung;Ilho Myeong;Kijoon Kim;Jongho Woo;Suhwan Lim;Kwangsoo Kim;Wanki Kim;Daewon Ha;Jinho Ahn;Sanghun Jeon

2024 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)

Year: 2024 | Conference Paper |

Cited by: Papers (2)

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In-depth Analysis of the Hafnia Ferroelectrics as a Key Enabler for Low Voltage & QLC 3D VNAND Beyond 1K Layers: Experimental Demonstration and Modeling

Giuk Kim;Hyojun Choi;Hunbeom Shin;Sangho Lee;Sangmok Lee;Yunseok Nam;Minhyun Jung;Ilho Myeong;Kijoon Kim;Jongho Woo;Suhwan Lim;Kwangsoo Kim;Wanki Kim;Daewon Ha;Jinho Ahn;Sanghun Jeon

2024 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)

Year: 2024 | Conference Paper |

Low-Damage Processed and High-Pressure Annealed High-k Hafnium Zirconium Oxide Capacitors near Morphotropic Phase Boundary with Record-Low EOT of 2.4Å & high-k of 70 for DRAM Technology

Venkateswarlu Gaddam;Junghyeon Hwang;Hunbeom Shin;Chaeheon Kim;Giuk Kim;Hyung-Jun Kim;Jooho Lee;Hyun-Cheol Kim;Bumsu Park;Suhwan Lim;Sang Yun Kim;Kwangsoo Kim;Sungho Lee;Daewon Ha;Jinho Ahn;Sanghun Jeon

2024 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)

Year: 2024 | Conference Paper |

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Low-Damage Processed and High-Pressure Annealed High-k Hafnium Zirconium Oxide Capacitors near Morphotropic Phase Boundary with Record-Low EOT of 2.4Å & high-k of 70 for DRAM Technology

2024 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)

Year: 2024 | Conference Paper |

HZO (>10 nm) Films for Achieving High-κ Near Morphotropic Phase Boundary at Low-Temperature Furnace Annealing Process

Yixin Qin;Venkateswarlu Gaddam;Taeseung Jung;Sanghun Jeon

IEEE Transactions on Electron Devices

Year: 2024 | Volume: 71, Issue: 9 | Journal Article |

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HZO (>10 nm) Films for Achieving High-κ Near Morphotropic Phase Boundary at Low-Temperature Furnace Annealing Process

Yixin Qin;Venkateswarlu Gaddam;Taeseung Jung;Sanghun Jeon

IEEE Transactions on Electron Devices

Year: 2024 | Volume: 71, Issue: 9 | Journal Article |

First Demonstration of Thermally Stable Zr:HfO2 Ferroelectrics via Inserting AlN Interlayer

Sangmok Lee;Giuk Kim;Sangho Lee;Hunbeom Shin;Youngjin Lim;Kang Kim;Do-Hyung Kim;Il-Kwon Oh;Sang-Hee Ko Park;Jinho Ahn;Sanghun Jeon

IEEE Electron Device Letters

Year: 2024 | Volume: 45, Issue: 9 | Journal Article |

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First Demonstration of Thermally Stable Zr:HfO2 Ferroelectrics via Inserting AlN Interlayer

Sangmok Lee;Giuk Kim;Sangho Lee;Hunbeom Shin;Youngjin Lim;Kang Kim;Do-Hyung Kim;Il-Kwon Oh;Sang-Hee Ko Park;Jinho Ahn;Sanghun Jeon

IEEE Electron Device Letters

Year: 2024 | Volume: 45, Issue: 9 | Journal Article |

Novel Strategies Toward High-Performance FeFET for Computing In Memory Application

Giuk Kim;Hyojun Choi;Sangho Lee;Hunbeom Shin;Lingwei Zhang;Sangmok Lee;Yunseok Nam;Woongjin Kim;Jihye Ock;Sujeong Lee;Hyunjun Kang;Sanghun Jeon

2024 International VLSI Symposium on Technology, Systems and Applications (VLSI TSA)

Year: 2024 | Conference Paper |

Cited by: Papers (2)

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Novel Strategies Toward High-Performance FeFET for Computing In Memory Application

Giuk Kim;Hyojun Choi;Sangho Lee;Hunbeom Shin;Lingwei Zhang;Sangmok Lee;Yunseok Nam;Woongjin Kim;Jihye Ock;Sujeong Lee;Hyunjun Kang;Sanghun Jeon

2024 International VLSI Symposium on Technology, Systems and Applications (VLSI TSA)

Year: 2024 | Conference Paper |

Charge Trap Flash with Superior Program Efficiency by Negative Capacitance-Boosting Effect

Giuk Kim;Hyojun Choi;Sangho Lee;Hunbeom Shin;Lingwei Zhang;Sangmok Lee;Yunseok Nam;Woongjin Kim;Jihye Ock;Sujeong Lee;Hyunjun Kang;Sanghun Jeon

2024 International VLSI Symposium on Technology, Systems and Applications (VLSI TSA)

Year: 2024 | Conference Paper |

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Charge Trap Flash with Superior Program Efficiency by Negative Capacitance-Boosting Effect

Giuk Kim;Hyojun Choi;Sangho Lee;Hunbeom Shin;Lingwei Zhang;Sangmok Lee;Yunseok Nam;Woongjin Kim;Jihye Ock;Sujeong Lee;Hyunjun Kang;Sanghun Jeon

2024 International VLSI Symposium on Technology, Systems and Applications (VLSI TSA)

Year: 2024 | Conference Paper |

Design of Physically Unclonable Function Using Ferroelectric FET With Auto Write-Back Technique for Resource-Limited IoT Security

Sehee Lim;Junghyeon Hwang;Dong Han Ko;Se Keon Kim;Tae Woo Oh;Sanghun Jeon;Seong-Ook Jung

IEEE Internet of Things Journal

Year: 2024 | Volume: 11, Issue: 16 | Journal Article |

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Design of Physically Unclonable Function Using Ferroelectric FET With Auto Write-Back Technique for Resource-Limited IoT Security

Sehee Lim;Junghyeon Hwang;Dong Han Ko;Se Keon Kim;Tae Woo Oh;Sanghun Jeon;Seong-Ook Jung

IEEE Internet of Things Journal

Year: 2024 | Volume: 11, Issue: 16 | Journal Article |

Ultrafast (50 ns) ID–VG Analysis on Oxide Thin-Film Transistors With Morphotropic Phase Boundary State High-κ Gate Insulator

Taeseung Jung;Sooji Nam;Sanghun Jeon

IEEE Transactions on Electron Devices

Year: 2024 | Volume: 71, Issue: 5 | Journal Article |

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Ultrafast (50 ns) ID–VG Analysis on Oxide Thin-Film Transistors With Morphotropic Phase Boundary State High-κ Gate Insulator

Taeseung Jung;Sooji Nam;Sanghun Jeon

IEEE Transactions on Electron Devices

Year: 2024 | Volume: 71, Issue: 5 | Journal Article |

Design Guidelines of Hafnia Ferroelectrics and Gate-Stack for Multilevel-Cell FeFET

Sangho Lee;Giuk Kim;Youngkyu Lee;Hunbeom Shin;Youngseok Jeong;Lingwei Zhang;Seong-Ook Jung;Sanghun Jeon

IEEE Transactions on Electron Devices

Year: 2024 | Volume: 71, Issue: 3 | Journal Article |

Cited by: Papers (3)

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Design Guidelines of Hafnia Ferroelectrics and Gate-Stack for Multilevel-Cell FeFET

Sangho Lee;Giuk Kim;Youngkyu Lee;Hunbeom Shin;Youngseok Jeong;Lingwei Zhang;Seong-Ook Jung;Sanghun Jeon

IEEE Transactions on Electron Devices

Year: 2024 | Volume: 71, Issue: 3 | Journal Article |

Ultra-high Tunneling Electroresistance Ratio (2 × 104) & Endurance (108) in Oxide Semiconductor-Hafnia Self-rectifying (1.5 × 103) Ferroelectric Tunnel Junction

Junghyeon Hwang;Chaeheon Kim;Hunbeom Shin;Hwayoung Kim;Sang-Hee Ko Park;Sanghun Jeon

2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)

Year: 2023 | Conference Paper |

Cited by: Papers (1)

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Ultra-high Tunneling Electroresistance Ratio (2 × 104) & Endurance (108) in Oxide Semiconductor-Hafnia Self-rectifying (1.5 × 103) Ferroelectric Tunnel Junction

Junghyeon Hwang;Chaeheon Kim;Hunbeom Shin;Hwayoung Kim;Sang-Hee Ko Park;Sanghun Jeon

2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)

Year: 2023 | Conference Paper |

Development of MFMIS Gatestack with Thick Hafnium Zirconium Oxide (HZO) for Nonvolatile Memory Application

Bohyeon Kang;Jongseo Park;Junghyeon Hwang;Sangho Lee;Hunbeom Shin;Jehyun An;Hyunseo You;Sung-Min Ahn;Sanghun Jeon;Rock-Hyun Baek

2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)

Year: 2023 | Conference Paper |

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Development of MFMIS Gatestack with Thick Hafnium Zirconium Oxide (HZO) for Nonvolatile Memory Application

Bohyeon Kang;Jongseo Park;Junghyeon Hwang;Sangho Lee;Hunbeom Shin;Jehyun An;Hyunseo You;Sung-Min Ahn;Sanghun Jeon;Rock-Hyun Baek

2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)

Year: 2023 | Conference Paper |

Dual-Mode Operations of Self-Rectifying Ferroelectric Tunnel Junction Crosspoint Array for High-Density Integration of IoT Devices

Sehee Lim;Youngin Goh;Young Kyu Lee;Dong Han Ko;Junghyeon Hwang;Yeongseok Jeong;Hunbeom Shin;Sanghun Jeon;Seong-Ook Jung

IEEE Journal of Solid-State Circuits

Year: 2023 | Volume: 58, Issue: 7 | Journal Article |

Cited by: Papers (9)

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Dual-Mode Operations of Self-Rectifying Ferroelectric Tunnel Junction Crosspoint Array for High-Density Integration of IoT Devices

Sehee Lim;Youngin Goh;Young Kyu Lee;Dong Han Ko;Junghyeon Hwang;Yeongseok Jeong;Hunbeom Shin;Sanghun Jeon;Seong-Ook Jung

IEEE Journal of Solid-State Circuits

Year: 2023 | Volume: 58, Issue: 7 | Journal Article |

Effect of Floating Gate Insertion on the Analog States of Ferroelectric Field-Effect Transistors

Sangho Lee;Youngkyu Lee;Giuk Kim;Taeho Kim;Taehyong Eom;Seong-Ook Jung;Sanghun Jeon

IEEE Transactions on Electron Devices

Year: 2023 | Volume: 70, Issue: 1 | Journal Article |

Cited by: Papers (10)

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Effect of Floating Gate Insertion on the Analog States of Ferroelectric Field-Effect Transistors

Sangho Lee;Youngkyu Lee;Giuk Kim;Taeho Kim;Taehyong Eom;Seong-Ook Jung;Sanghun Jeon

IEEE Transactions on Electron Devices

Year: 2023 | Volume: 70, Issue: 1 | Journal Article |

Oxygen Vacancy Control as a Strategy to Enhance Imprinting Effect in Hafnia Ferroelectric Devices

Yeongseok Jeong;Venkateswarlu Gaddam;Youngin Goh;Hunbeom Shin;Sangho Lee;Giuk Kim;Sanghun Jeon

IEEE Transactions on Electron Devices

Year: 2023 | Volume: 70, Issue: 1 | Journal Article |

Cited by: Papers (8)

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Oxygen Vacancy Control as a Strategy to Enhance Imprinting Effect in Hafnia Ferroelectric Devices

Yeongseok Jeong;Venkateswarlu Gaddam;Youngin Goh;Hunbeom Shin;Sangho Lee;Giuk Kim;Sanghun Jeon

IEEE Transactions on Electron Devices

Year: 2023 | Volume: 70, Issue: 1 | Journal Article |

Triple-Node FinFET With Non-Ohmic Schottky Junctions for Synaptic Devices

Ji-Man Yu;Seong-Yeon Kim;Jin-Ki Kim;Joon-Kyu Han;Seung-Bae Jeon;Yang-Kyu Choi

IEEE Electron Device Letters

Year: 2023 | Volume: 44, Issue: 1 | Journal Article |

Cited by: Papers (3)

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Triple-Node FinFET With Non-Ohmic Schottky Junctions for Synaptic Devices

Ji-Man Yu;Seong-Yeon Kim;Jin-Ki Kim;Joon-Kyu Han;Seung-Bae Jeon;Yang-Kyu Choi

IEEE Electron Device Letters

Year: 2023 | Volume: 44, Issue: 1 | Journal Article |

Design Guidelines of Thermally Stable Hafnia Ferroelectrics for the Fabrication of 3D Memory Devices

Giuk Kim;Hunbeom Shin;Taehyong Eom;Minhyun Jung;Taeho Kim;Sangho Lee;Minki Kim;Yeongseok Jeong;Ji-Sung Kim;Kab-Jin Nam;Bong Jin Kuh;Sanghun Jeon

2022 International Electron Devices Meeting (IEDM)

Year: 2022 | Conference Paper |

Cited by: Papers (6)

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Design Guidelines of Thermally Stable Hafnia Ferroelectrics for the Fabrication of 3D Memory Devices

Giuk Kim;Hunbeom Shin;Taehyong Eom;Minhyun Jung;Taeho Kim;Sangho Lee;Minki Kim;Yeongseok Jeong;Ji-Sung Kim;Kab-Jin Nam;Bong Jin Kuh;Sanghun Jeon

2022 International Electron Devices Meeting (IEDM)

Year: 2022 | Conference Paper |

Hyunhak Jeong

Hyunhak Jeong

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