Sekeon Kim - IEEE Xplore Author Profile
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Sekeon Kim

Also published under: Se Keon Kim

Publications
9
Citations
28
Publications by Year
20212024
Co-Authors:
Show All Co-Authors (23)
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Sekeon Kim

Also published under: Se Keon Kim

Affiliation

School of Electrical and Electronics Engineering
Yonsei University
Seoul, Republic of Korea

Publication Topics

Biography

Se Keon Kim was born in Seoul, South Korea, in 1996. He is currently pursuing the B.S. degree in electrical and electronic engineering with Yonsei University, Seoul.,His current research interests include ferroelectric FET-based nonvolatile circuit design.(Based on document published on 10 May 2024).
Publications
9
Citations
28
Publications by Year
20212024
Co-Authors:
Show All Co-Authors (23)
Author's Published Works

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A 14nm SRAM Using NMOS Header Assist Cell for Improved Write Ability and Reduced Cell Retention Leakage

Jungmyung Kang;Keonhee Cho;Sekeon Kim;Giseok Kim;Hyunjun Kim;Dongwook Seo;Sangyeop Baeck;Seiseung Yoon;Seong-Ook Jung

2024 IEEE European Solid-State Electronics Research Conference (ESSERC)
Year: 2024 | Conference Paper |
This paper presents NMOS header assist cell (NHAC) that lowers SRAM VMin with minimal power overhead for low power applications. The proposed NHAC, featuring a bitcell-compatible layout, is inserted between cell arrays to provide cell power. NHAC achieves a VMIN improvement of 210 mV with 4% power overhead, even in the high interconnect resistance case, thanks to the continuous self-collapse of ce...Show More

A 14nm SRAM Using NMOS Header Assist Cell for Improved Write Ability and Reduced Cell Retention Leakage

Jungmyung Kang;Keonhee Cho;Sekeon Kim;Giseok Kim;Hyunjun Kim;Dongwook Seo;Sangyeop Baeck;Seiseung Yoon;Seong-Ook Jung

Year: 2024 | Conference Paper |

Design of Physically Unclonable Function Using Ferroelectric FET With Auto Write-Back Technique for Resource-Limited IoT Security

Sehee Lim;Junghyeon Hwang;Dong Han Ko;Se Keon Kim;Tae Woo Oh;Sanghun Jeon;Seong-Ook Jung

IEEE Internet of Things Journal
Year: 2024 | Volume: 11, Issue: 16 | Journal Article |
Physically unclonable function (PUF) is a lightweight encryption technique that generates random digital keys (responses) using intrinsic process variations of devices, which is a promising solution for Internet of Things (IoT) security due to its compatibility with constrained resources. Recent attempts to adopt nonvolatile memory (NVM) into PUFs have enhanced stability through a write-back techn...Show More

Design of Physically Unclonable Function Using Ferroelectric FET With Auto Write-Back Technique for Resource-Limited IoT Security

Sehee Lim;Junghyeon Hwang;Dong Han Ko;Se Keon Kim;Tae Woo Oh;Sanghun Jeon;Seong-Ook Jung

Year: 2024 | Volume: 11, Issue: 16 | Journal Article |

15.4 Self-Enabled Write-Assist Cells for High-Density SRAM in a Resistance-Dominated Technology Node

Minjune Yeo;Keonhee Cho;Giseok Kim;Won Joon Jo;Jisang Oh;Sekeon Kim;Kyeongrim Baek;Sungho Park;Seung Jae Yei;Seong-Ook Jung

2024 IEEE International Solid-State Circuits Conference (ISSCC)
Year: 2024 | Conference Paper |
For applications where a significant amount of data is processed within a limited area, such as mobile and graphics applications, the demand for higher-density SRAM becomes more evident [1]. As shown in Fig. 15.4.1 (top left), SRAM cell area is progressively decreasing with technology scaling to achieve high-density [2]. However, in sub-5nm technology nodes, shown in Fig. 15.4.1 (top right), the r...Show More

15.4 Self-Enabled Write-Assist Cells for High-Density SRAM in a Resistance-Dominated Technology Node

Minjune Yeo;Keonhee Cho;Giseok Kim;Won Joon Jo;Jisang Oh;Sekeon Kim;Kyeongrim Baek;Sungho Park;Seung Jae Yei;Seong-Ook Jung

Year: 2024 | Volume: 67 | Conference Paper |

Ferroelectric FET Nonvolatile Sense-Amplifier-Based Flip-Flops for Low Voltage Operation

Sekeon Kim;Sehee Lim;Dong Han Ko;Tae Woo Oh;Seong-Ook Jung

IEEE Transactions on Circuits and Systems I: Regular Papers
Year: 2024 | Volume: 71, Issue: 1 | Journal Article |
Nonvolatile processors (NVPs) are promising for energy-constrained internet-of-things applications in which frequent switch to standby mode occurs due to their fast and energy-efficient backup and restore operations of locally embedded nonvolatile flip-flops (NV-FFs) with zero leakage current. In addition, the most effective method to reduce dynamic energy consumption is to lower the supply voltag...Show More

Ferroelectric FET Nonvolatile Sense-Amplifier-Based Flip-Flops for Low Voltage Operation

Sekeon Kim;Sehee Lim;Dong Han Ko;Tae Woo Oh;Seong-Ook Jung

Year: 2024 | Volume: 71, Issue: 1 | Journal Article |

A Static Contention-Free Dual-Edge-Triggered Flip-Flop with Redundant Internal Node Transition Elimination for Ultra-Low-Power Applications

Sekeon Kim;Keonhee Cho;Kyeongrim Baek;Hyunjun Kim;Younmee Bae;Mijung Kim;Dongwook Seo;Sangyeop Baeck;Sungjae Lee;Seong-Ook Jung

2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)
Year: 2023 | Conference Paper |
Cited by: Papers (1)
This paper presents a dual-edge-triggered flip-flop (DET-FF) with redundant internal node transition elimination (RTEDET) to achieve minimal dynamic power consumption. The proposed RTEDET shows lower total power by 37%/39% than the recent low-power flip-flop/conventional DET-FF thanks to the halved CK frequency and the redundant internal node transition elimination. In addition, the proposed RTEDE...Show More

A Static Contention-Free Dual-Edge-Triggered Flip-Flop with Redundant Internal Node Transition Elimination for Ultra-Low-Power Applications

Sekeon Kim;Keonhee Cho;Kyeongrim Baek;Hyunjun Kim;Younmee Bae;Mijung Kim;Dongwook Seo;Sangyeop Baeck;Sungjae Lee;Seong-Ook Jung

Year: 2023 | Conference Paper |

Cross-Coupled Ferroelectric FET-Based Ternary Content Addressable Memory With Energy-Efficient Match Line Scheme

Sehee Lim;Dong Han Ko;Se Keon Kim;Seong-Ook Jung

IEEE Transactions on Circuits and Systems I: Regular Papers
Year: 2023 | Volume: 70, Issue: 2 | Journal Article |
Cited by: Papers (5)
Fast communication between networking devices increases the importance of the ternary content addressable memory (TCAM). The demands for low energy in networking devices have accelerated the research on nonvolatile TCAMs that store data without the power supply. Recently, ferroelectric field-effect transistors (FeFETs), nonvolatile three-terminal devices with a high on/off ratio, have been adopted...Show More

Cross-Coupled Ferroelectric FET-Based Ternary Content Addressable Memory With Energy-Efficient Match Line Scheme

Sehee Lim;Dong Han Ko;Se Keon Kim;Seong-Ook Jung

Year: 2023 | Volume: 70, Issue: 2 | Journal Article |

Variation-Tolerant Capacitive Coupling Sense Amplifier with Body Biasing Technique for High-Performance SRAM

Seungiae Yei;Keonhee Cho;Sekeon Kim;Jisang Oh;Minjune Yeo;Kyeongrim Baek;Seong-Ook Jung

2022 IEEE International Conference on Consumer Electronics-Asia (ICCE-Asia)
Year: 2022 | Conference Paper |
Cited by: Papers (1)
This paper presents the SRAM sense amplifier (SA) that can improve read speed by making it tolerant to process variation. By using the body biasing effect, the proposed body bias variation tolerant small-signal sense amplifier (BB-VTS-SA) decreased the standard deviation of offset voltage by 12.4% compared to the original variation tolerant small-signal sense amplifier (VTS-SA).Show More

Variation-Tolerant Capacitive Coupling Sense Amplifier with Body Biasing Technique for High-Performance SRAM

Seungiae Yei;Keonhee Cho;Sekeon Kim;Jisang Oh;Minjune Yeo;Kyeongrim Baek;Seong-Ook Jung

Year: 2022 | Conference Paper |

Comparative Analysis and Energy-Efficient Write Scheme of Ferroelectric FET-Based Memory Cells

Dong Han Ko;Tae Woo Oh;Sehee Lim;Se Keon Kim;Seong-Ook Jung

IEEE Access
Year: 2021 | Volume: 9 | Journal Article |
Cited by: Papers (7)
The ferroelectric field-effect transistor (FeFET) is one of the most promising candidates for emerging nonvolatile memory devices owing to its low write energy and high $I_{\mathrm {ON}}/I_{\mathrm {OFF}}$ ratio. For FeFET applications as nonvolatile memory devices, 1FeFET, 1T-1FeFET, 2T-1FeFET, and 3T-1FeFET cells have been proposed. The 1FeFET cell exhibits the highest density but suffers from...Show More

Comparative Analysis and Energy-Efficient Write Scheme of Ferroelectric FET-Based Memory Cells

Dong Han Ko;Tae Woo Oh;Sehee Lim;Se Keon Kim;Seong-Ook Jung

Year: 2021 | Volume: 9 | Journal Article |

High-Performance and Area-Efficient Ferroelectric FET-Based Nonvolatile Flip-Flops

Se Keon Kim;Tae Woo Oh;Sehee Lim;Dong Han Ko;Seong-Ook Jung

IEEE Access
Year: 2021 | Volume: 9 | Journal Article |
Cited by: Papers (14)
Recently, nonvolatile systems with nonvolatile flip-flops (NVFFs) have gained prominence for their energy efficiency in energy-harvesting devices and battery-operated Internet of Things applications. They are normally-off instantly-on, and thus, can save energy effectively owing to their zero standby power consumption. An NVFF stores the computing state in nonvolatile memories (NVMs) when the powe...Show More

High-Performance and Area-Efficient Ferroelectric FET-Based Nonvolatile Flip-Flops

Se Keon Kim;Tae Woo Oh;Sehee Lim;Dong Han Ko;Seong-Ook Jung

Year: 2021 | Volume: 9 | Journal Article |

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