Loading [MathJax]/extensions/MathMenu.js

Prashant Kumar Rai - IEEE Xplore Author Profile

Scheduled Maintenance on Monday 1/13/2025

Single article sales and account management will be unavailable from 5:00 AM - 7:00 PM ET (09:00 - 23:00 UTC). We apologize for the inconvenience.

IEEE.org
IEEE Xplore
IEEE SA
IEEE Spectrum
More Sites

- Donate
- Personal Sign In

Institutional Sign In

Institutional Sign In

ADVANCED SEARCH

Author details

Prashant Kumar Rai

Publications

2

Citations

4

Publications by Year

20212025

Co-Authors:

Henrik AndreassonDaniel ErikssonDavid FassbenderPaolo ForteMarcus Geimer

Show All Co-Authors (13)

Prashant Kumar Rai

Affiliation

Faculty of Engineering and Natural Sciences

Tampere University

Tampere, Finland

Publication Topics

3D LiDAR,
Actuator,
Adverse Weather Conditions,
Application Areas,
Artificial Intelligence Methods,
Asset Specificity,
Autonomous Technology,
Business Model,
Challenges Of Collaboration,
Closest Match,
Consecutive Scans,
Constant False Alarm Rate

Biography

Prashant Kumar Rai (Graduate Student Member, IEEE) is currently pursuing the Ph.D. degree with the Faculty of Engineering and Natural Sciences, Tampere University. His research interests include machine learning, simultaneous localization and mapping, state estimation, and environment understanding using high resolution mmWave radars.(Based on document published on 18 February 2025).

Publications

2

Citations

4

Publications by Year

20212025

Co-Authors:

Henrik Andreasson
Daniel Eriksson
David Fassbender
Paolo Forte
Marcus Geimer

Show All Co-Authors (13)

Author's Published Works

Search History

Showing 1-25 of 69 results

Conferences (41)

Journals (27)

Magazines (1)

Sort

Filter Results

Show

Open Access Only

Range
Single Year
S.W. Hwang(19)
Sung Woo Hwang(18)
D. Ahn(12)
Sungwoo Hwang(11)
SungWoo Hwang(9)
School of Electrical Engineering, Korea University, Seoul, South Korea(16)
Institute of Quantum Information Processing and Systems, University of Seoul, Seoul, South Korea(12)
Department of Electronics Engineering, Korea University, Seoul, South Korea(5)
Samsung Advanced Institute of Technology, Suwon, Gyeonggi-do, KR(4)
Department of Electronics and Computer Engineering, Korea University, Seoul, South Korea(4)
IEEE Electron Device Letters(7)
IEEE Transactions on Nanotechnology(7)
IEEE Transactions on Electron Devices(6)
IEEE Microwave and Wireless Components Letters(4)
2008 IEEE Silicon Nanoelectronics Workshop(3)
IEEE(69)
Tokyo, Japan(4)
Honolulu, HI, USA(3)
Kyoungju, Korea (South)(3)
San Francisco, CA, USA(3)
Manchester, UK(2)
Silicon Nanowires(15)
Equivalent Circuit(9)
Drain Current(7)
Field-effect Transistors(7)
Resonance Frequency(7)

Select All on Page

Sort By

Results

Symbiosis of Semiconductors, AI and Quantum Computing

S.W. Hwang;Seungju Han;W. Lee;W. Chang;J.H. Song;S.J. Kim;S. Park;H.J. Shin;J. Heo;Y.S. Choi;T. Ha;D. Lee;H. Lee;J. Lee;R. Ashcraft;G.H. Koh;H.K. Kang

2020 IEEE International Electron Devices Meeting (IEDM)

Year: 2020 | Conference Paper |

Cited by: Papers (2)

HTML

During last decade, various deep learning algorithms successfully broke the thick ice of AI winter so that they became an important part both in industries and daily lives [1]. They also invoked the development of AI accelerators (NPUs: neural processing units) that became a standard computing unit. This paper gives perspectives on various types of AI computing and device technology developments s...Show More

Symbiosis of Semiconductors, AI and Quantum Computing

S.W. Hwang;Seungju Han;W. Lee;W. Chang;J.H. Song;S.J. Kim;S. Park;H.J. Shin;J. Heo;Y.S. Choi;T. Ha;D. Lee;H. Lee;J. Lee;R. Ashcraft;G.H. Koh;H.K. Kang

2020 IEEE International Electron Devices Meeting (IEDM)

Year: 2020 | Conference Paper |

Electrically Reconfigurable Active Metasurface for 3D Distance Ranging

Sun Il Kim;Junghyun Park;Byung Gil Jeong;Duhyun Lee;Jungwoo Kim;Changgyun Shin;Chang Bum Lee;Tatsuhiro Otsuka;Sangwook Kim;Ki-Yeon Yang;Yong-Young Park;Jisan Lee;Inoh Hwang;Jaeduck Jang;Kyoungho Ha;Hyuck Choo;Byoung Lyong Choi;Sung-Woo Hwang

2020 IEEE International Electron Devices Meeting (IEDM)

Year: 2020 | Conference Paper |

Cited by: Papers (2)

HTML

For the first time, we have successfully demonstrated a 3-dimensional (3-D) depth scan using an electrically-tunable active metasurface, which is an array of plasmonic resonators with an active indium-tin-oxide (ITO) layer. Our active device can steer a beam in reflection with a positive side-mode suppression ratio by independently controlling the amplitude and the phase from 0 to 360° using two s...Show More

Electrically Reconfigurable Active Metasurface for 3D Distance Ranging

Sun Il Kim;Junghyun Park;Byung Gil Jeong;Duhyun Lee;Jungwoo Kim;Changgyun Shin;Chang Bum Lee;Tatsuhiro Otsuka;Sangwook Kim;Ki-Yeon Yang;Yong-Young Park;Jisan Lee;Inoh Hwang;Jaeduck Jang;Kyoungho Ha;Hyuck Choo;Byoung Lyong Choi;Sung-Woo Hwang

2020 IEEE International Electron Devices Meeting (IEDM)

Year: 2020 | Conference Paper |

A Gain-Enhanced Silicon-Photonic Optical Phased Array with Integrated O-Band Amplifiers for 40-m Ranging and 3D Scan

Hyunil Byun;Jisan Lee;Bongyong Jang;Changbum Lee;Eunkyung Lee;Inoh Hwang;Changgyun Shin;Dongjae Shin;Dongshik Shim;Tatsuhiro Otsuka;Sungwoo Hwang;Hyuck Choo;Kyoungho Ha

2020 Conference on Lasers and Electro-Optics (CLEO)

Year: 2020 | Conference Paper |

Cited by: Papers (1)

HTML

For the first time, we demonstrate 40-m range detection and 3D depth scan up to 20 m using a silicon-photonic optical phased array with integrated amplifiers, promising a high-performance solid-state light-detection and ranging (LiDAR) system.Show More

A Gain-Enhanced Silicon-Photonic Optical Phased Array with Integrated O-Band Amplifiers for 40-m Ranging and 3D Scan

Hyunil Byun;Jisan Lee;Bongyong Jang;Changbum Lee;Eunkyung Lee;Inoh Hwang;Changgyun Shin;Dongjae Shin;Dongshik Shim;Tatsuhiro Otsuka;Sungwoo Hwang;Hyuck Choo;Kyoungho Ha

2020 Conference on Lasers and Electro-Optics (CLEO)

Year: 2020 | Conference Paper |

Electrode-Adaptive Thin-Film Integrated Logic Circuits

Byeong Hyeon Lee;Kyung-Sang Cho;Ahrum Sohn;Sungwoo Hwang;Sang Yeol Lee

IEEE Transactions on Electron Devices

Year: 2019 | Volume: 66, Issue: 2 | Journal Article |

Cited by: Papers (3)

HTML

Amorphous oxide-based thin-film logic circuits have been fabricated using only an n-type amorphous silicon–zinc–tin–oxide (a-SZTO) channel layer with different source/drain electrodes. Enhancement-mode thin-film transistors (TFTs) were fabricated with oxide electrodes. Depletion-mode TFTs were fabricated with metal electrode. Work functions were measured by Kelvin probemicroscopy. The barrier heig...Show More

Electrode-Adaptive Thin-Film Integrated Logic Circuits

Byeong Hyeon Lee;Kyung-Sang Cho;Ahrum Sohn;Sungwoo Hwang;Sang Yeol Lee

IEEE Transactions on Electron Devices

Year: 2019 | Volume: 66, Issue: 2 | Journal Article |

Cuff-Less Blood Pressure Estimation Using Pulse Waveform Analysis and Pulse Arrival Time

Young-Zoon Yoon;Jae Min Kang;Yongjoo Kwon;Sangyun Park;Seungwoo Noh;Younho Kim;Jongae Park;Sung Woo Hwang

IEEE Journal of Biomedical and Health Informatics

Year: 2018 | Volume: 22, Issue: 4 | Journal Article |

Cited by: Papers (63)

HTML

Using the massive MIMIC physiological database, we tried to validate pulse wave analysis (PWA) based on multiparameters model whether it can continuously estimate blood pressure (BP) values on single site of one hand. In addition, to consider the limitation of insufficient data acquirement for home user, we used pulse arrival time (PAT) driven BP information to determine the individual scale facto...Show More

Cuff-Less Blood Pressure Estimation Using Pulse Waveform Analysis and Pulse Arrival Time

Young-Zoon Yoon;Jae Min Kang;Yongjoo Kwon;Sangyun Park;Seungwoo Noh;Younho Kim;Jongae Park;Sung Woo Hwang

IEEE Journal of Biomedical and Health Informatics

Year: 2018 | Volume: 22, Issue: 4 | Journal Article |

Temperature-Dependent Electrical Characterization of Amorphous Indium Zinc Oxide Thin-Film Transistors

Keun Heo;Kyung-Sang Cho;Jun Young Choi;Sangmin Han;Yun Seop Yu;Yonmook Park;Gwangwe Yoo;Jin-Hong Park;Sung Woo Hwang;Sang Yeol Lee

IEEE Transactions on Electron Devices

Year: 2017 | Volume: 64, Issue: 8 | Journal Article |

Cited by: Papers (8)

HTML

In this study, N-type amorphous indium zinc oxide thin-film transistors are fabricated and temperature-dependent electrical characteristics in the range of 170-295 K are analyzed through experimental measurements and using an equivalent-circuit model. In this model, thermionic field emission for reverse bias and a thermionic emission mechanism for forward bias are applied. The barrier height coeff...Show More

Temperature-Dependent Electrical Characterization of Amorphous Indium Zinc Oxide Thin-Film Transistors

Keun Heo;Kyung-Sang Cho;Jun Young Choi;Sangmin Han;Yun Seop Yu;Yonmook Park;Gwangwe Yoo;Jin-Hong Park;Sung Woo Hwang;Sang Yeol Lee

IEEE Transactions on Electron Devices

Year: 2017 | Volume: 64, Issue: 8 | Journal Article |

Sub-terahertz slow-wave circuits for coherent radiation sources

Chan-Wook Baik;Ho Young Ahn;Yongsung Kim;Jooho Lee;Seogwoo Hong;Sang Hun Lee;Jun Hee Choi;Sunil Kim;Jong Min Kim;Sungwoo Hwang;So-Yeon Jeon;SeGi Yu;George Collins;M. E. Read;R. Lawrence Ives

2016 URSI Asia-Pacific Radio Science Conference (URSI AP-RASC)

Year: 2016 | Conference Paper |

HTML

In this letter, we propose sub-terahertz (sub-THz) slow-wave circuits for coherent radiation sources through beam-wave interaction mechanism. The circuits are prepared using microfabrication in advanced silicon (Si) technologies. Our approach is to split the circuit into multi levels allowing a low aspect ratio configuration and alleviating the loading effect of deep-reactive-ion etching on silico...Show More

Sub-terahertz slow-wave circuits for coherent radiation sources

Chan-Wook Baik;Ho Young Ahn;Yongsung Kim;Jooho Lee;Seogwoo Hong;Sang Hun Lee;Jun Hee Choi;Sunil Kim;Jong Min Kim;Sungwoo Hwang;So-Yeon Jeon;SeGi Yu;George Collins;M. E. Read;R. Lawrence Ives

2016 URSI Asia-Pacific Radio Science Conference (URSI AP-RASC)

Year: 2016 | Conference Paper |

Colloidal quantum dot photonic crystal lasers with M-point band-edge emission

Hojun Chang;Kyungtaek Min;Myungjae Lee;Minsu Kang;Yeonsang Park;Kyung Sang Cho;Young-Geun Roh;Sungwoo Hwang;Heonsu Jeon

2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)

Year: 2016 | Conference Paper |

HTML

Summary form only given. Utilizing colloidal quantum dots (CQDs) as a gain material in a passive two-dimensional photonic crystal (PC) backbone structure, we have experimentally demonstrated room-temperature lasing operation at band-edge modes. A silicon nitride PC slab on silica substrate contains a square lattice array of air-holes, which is designed to have an in-plane, M-point low index band-e...Show More

Colloidal quantum dot photonic crystal lasers with M-point band-edge emission

Hojun Chang;Kyungtaek Min;Myungjae Lee;Minsu Kang;Yeonsang Park;Kyung Sang Cho;Young-Geun Roh;Sungwoo Hwang;Heonsu Jeon

2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)

Year: 2016 | Conference Paper |

Enhanced RF performance in multi-tunnel backward-wave oscillators

Chan-Wook Baik;Yongsung Kim;Ho Young Ahn;Jooho Lee;Seogwoo Hong;Sanghun Lee;Junhee Choi;Kyung-Sang Cho;Sunil Kim;R. Lawrence Ives;Jong Min Kim;Sungwoo Hwang

IEEE International Vacuum Electronics Conference

Year: 2014 | Conference Paper |

Cited by: Papers (1)

We propose an efficient beam-wave interaction circuit employing a multi-tunnel, slow-wave structure for W-band backward-wave oscillators. The tunnel is disposed one of above and below the beam tunnel, which enhances RF characteristics. The interaction circuit is prepared using a deep-reactive ion etched (DRIE), multi-level microfabrication on silicon wafers. The return loss shows strong resonances...Show More

Enhanced RF performance in multi-tunnel backward-wave oscillators

Chan-Wook Baik;Yongsung Kim;Ho Young Ahn;Jooho Lee;Seogwoo Hong;Sanghun Lee;Junhee Choi;Kyung-Sang Cho;Sunil Kim;R. Lawrence Ives;Jong Min Kim;Sungwoo Hwang

IEEE International Vacuum Electronics Conference

Year: 2014 | Conference Paper |

Barrier Height at the Graphene and Carbon Nanotube Junction

Tae Geun Kim;Un Jeong Kim;Si Young Lee;Young Hee Lee;Yun Seop Yu;Sung Woo Hwang;Sangsig Kim

IEEE Transactions on Electron Devices

Year: 2014 | Volume: 61, Issue: 6 | Journal Article |

Cited by: Papers (12)

HTML

Graphene/carbon nanotube (CNT) junction barrier height was investigated using all-carbon field-effect transistor structure with graphene and single-walled CNT (SWCNT) network as source (S)/drain (D)/gate electrodes and as channel, respectively. SWCNT network channel was formed by dielectricphoresis process at the prepatterned graphene S/D electrodes. By analyzing the measured current-voltage chara...Show More

Barrier Height at the Graphene and Carbon Nanotube Junction

Tae Geun Kim;Un Jeong Kim;Si Young Lee;Young Hee Lee;Yun Seop Yu;Sung Woo Hwang;Sangsig Kim

IEEE Transactions on Electron Devices

Year: 2014 | Volume: 61, Issue: 6 | Journal Article |

Local Crystallization of ${\rm LaB}_{6}$ Yielding Compact, Strong Thermionic Electron Emission Source

Jun Hee Choi;Ho Young Ahn;Yun Sung Lee;Min Ho Yang;Chan-Wook Baik;Kyung Sang Cho;Sun Il Kim;Seong-Jun Jeong;Jong-Myeong Jeon;Miyoung Kim;Sungwoo Hwang

IEEE Electron Device Letters

Year: 2013 | Volume: 34, Issue: 10 | Journal Article |

Cited by: Papers (6)

HTML

Local microheating of amorphous LaB6 film could control the degree of crystallization as determined by spatially resolved Raman spectroscopy and transmission electron microscopy. With full crystallization of the LaB6, we achieved micrometer-sized thermionic electron emission source with the maximum current density of 1.2 A/cm2. The advantage of fabricating a micrometer-sized emitter with high curr...Show More

Local Crystallization of ${\rm LaB}_{6}$ Yielding Compact, Strong Thermionic Electron Emission Source

Jun Hee Choi;Ho Young Ahn;Yun Sung Lee;Min Ho Yang;Chan-Wook Baik;Kyung Sang Cho;Sun Il Kim;Seong-Jun Jeong;Jong-Myeong Jeon;Miyoung Kim;Sungwoo Hwang

IEEE Electron Device Letters

Year: 2013 | Volume: 34, Issue: 10 | Journal Article |

Experimental measurement of W-band backward-wave amplification driven by external pulsed signals

Chan-Wook Baik;Ho Young Ahn;Yongsung Kim;Jooho Lee;Seogwoo Hong;Sanghun Lee;Junhee Choi;Sunil Kim;George A. Collins;Lawrence Ives;Sungwoo Hwang

2013 IEEE 14th International Vacuum Electronics Conference (IVEC)

Year: 2013 | Conference Paper |

Cited by: Papers (2)

HTML

The experimental implementation of W-band backward-wave oscillator is achieved by using a multilevel microfabrication of interaction circuit including beam tunnel, slow-wave structure, and output transition, on deep reactive ion etched (DRIE) and metal deposited silicon wafers. The interaction circuit shows precise accuracy in full 3 dimensions, and the return loss measurement agrees well with HFS...Show More

Experimental measurement of W-band backward-wave amplification driven by external pulsed signals

Chan-Wook Baik;Ho Young Ahn;Yongsung Kim;Jooho Lee;Seogwoo Hong;Sanghun Lee;Junhee Choi;Sunil Kim;George A. Collins;Lawrence Ives;Sungwoo Hwang

2013 IEEE 14th International Vacuum Electronics Conference (IVEC)

Year: 2013 | Conference Paper |

Hybrid Bulk Acoustic Wave Structure for Temperature Stability in LTE Applications

Jea-Shik Shin;Insang Song;Chul-Soo Kim;Sang Uk Son;Moon-Chul Lee;Duck-Hwan Kim;Ho-Soo Park;Jing Cui;Yujie Ai;Sungwoo Hwang;Jae-Sung Rieh

IEEE Microwave and Wireless Components Letters

Year: 2013 | Volume: 23, Issue: 9 | Journal Article |

Cited by: Papers (4)

HTML

A novel structure of hybrid bulk acoustic wave (BAW) resonator with low temperature coefficient of frequency (TCF) is presented. Implemented with a pair of quarter-wave reflectors on air-cavity reflector, the hybrid BAW resonator exhibits a TCF of as low as -11.5 ppm/°C and an effective electro-mechanical coupling coefficient (kt2) of 5.1% at the frequency of 2.5 GHz. The hybrid BAW resonator also...Show More

Hybrid Bulk Acoustic Wave Structure for Temperature Stability in LTE Applications

Jea-Shik Shin;Insang Song;Chul-Soo Kim;Sang Uk Son;Moon-Chul Lee;Duck-Hwan Kim;Ho-Soo Park;Jing Cui;Yujie Ai;Sungwoo Hwang;Jae-Sung Rieh

IEEE Microwave and Wireless Components Letters

Year: 2013 | Volume: 23, Issue: 9 | Journal Article |

Interface Trap Density of Gate-All-Around Silicon Nanowire Field-Effect Transistors With TiN Gate: Extraction and Compact Model

Faraz Najam;Yun Seop Yu;Keun Hwi Cho;Kyoung Hwan Yeo;Dong-Won Kim;Jong Seung Hwang;Sansig Kim;Sung Woo Hwang

IEEE Transactions on Electron Devices

Year: 2013 | Volume: 60, Issue: 8 | Journal Article |

Cited by: Papers (17)

HTML

Si/SiO2 interface trap charge distribution of cylindrical cross-sectioned gate-all-around silicon nanowire field-effect transistor is extracted by using three-dimensional simulation. While the interface chemistry of conventional gatestack ( Si/SiO2 polysilicon) in conventional planar devices is well documented, not much work is available on interface trap distribution Dit of alternate gatestacks (...Show More

Interface Trap Density of Gate-All-Around Silicon Nanowire Field-Effect Transistors With TiN Gate: Extraction and Compact Model

Faraz Najam;Yun Seop Yu;Keun Hwi Cho;Kyoung Hwan Yeo;Dong-Won Kim;Jong Seung Hwang;Sansig Kim;Sung Woo Hwang

IEEE Transactions on Electron Devices

Year: 2013 | Volume: 60, Issue: 8 | Journal Article |

Quantitative Extraction of Temperature-Dependent Barrier Height and Channel Resistance of a-SIZO/OMO and a-SIZO/IZO Thin-Film Transistors

K. Heo;B. H. Hong;E. H. Lee;S. Y. Lee;S. Kim;S. W. Hwang

IEEE Electron Device Letters

Year: 2013 | Volume: 34, Issue: 2 | Journal Article |

Cited by: Papers (9)

HTML

Temperature (T)-dependent electrical characteristics of thin-film transistors fabricated using oxide-metal-oxide (OMO) and indium-zinc-oxide (IZO) as electrodes and amorphous silicon-doped IZO (a-SIZO) as channel material were studied. The measured data were fit, using a Schottky diode/resistor/Schottky-diode-equivalent circuit model, to obtain the barrier height and the channel resistance. The ba...Show More

Quantitative Extraction of Temperature-Dependent Barrier Height and Channel Resistance of a-SIZO/OMO and a-SIZO/IZO Thin-Film Transistors

K. Heo;B. H. Hong;E. H. Lee;S. Y. Lee;S. Kim;S. W. Hwang

IEEE Electron Device Letters

Year: 2013 | Volume: 34, Issue: 2 | Journal Article |

Fabrication of suspended bridge type resonator using laser interference lithography

Boyeon Hwang;In-Sang Song;Jung Ho Park;Jea-Shik Shin;Jae-Sung Rieh;Sung-Woo Hwang;Byeong-kwon Ju

2012 7th European Microwave Integrated Circuit Conference

Year: 2012 | Conference Paper |

We report the fabrication method of suspended bridge type nanoelectromechanical system (NEMS) resonator for high quality factor (Q-factor) and increase in resonance frequency beyond the ultra-high frequency (UHF) by laser interference lithography (LIL) using silicon-on-insulator wafer. LIL is capable of a fast nano-patterning over a large area and does not require a mask. In fabricating a suspende...Show More

Fabrication of suspended bridge type resonator using laser interference lithography

Boyeon Hwang;In-Sang Song;Jung Ho Park;Jea-Shik Shin;Jae-Sung Rieh;Sung-Woo Hwang;Byeong-kwon Ju

2012 7th European Microwave Integrated Circuit Conference

Year: 2012 | Conference Paper |

Observation of backward-wave oscillations in silicon-MEMS beam-wave interaction circuits at 0.1 THz

Chan-Wook Baik;Ho Young Ahn;Yongsung Kim;Jooho Lee;Seogwoo Hong;Junhee Choi;Sunil Kim;Byoung Lyong Choi;George A. Collins;Lawrence Ives;Sungwoo Hwang

2012 37th International Conference on Infrared, Millimeter, and Terahertz Waves

Year: 2012 | Conference Paper |

Cited by: Papers (1)

HTML

We report a W-band backward-wave oscillator using micro-fabrication technologies by which a fully 3-dimensional slow-wave interaction circuit is successfully employed on multi-bonded silicon wafers. MEMS (micro-electromechanical systems) technologies such as deep RIE (reactive ion etching) and thermocompressive hermetic bonding are applied to achieve highly accurate dimensional structures for high...Show More

Observation of backward-wave oscillations in silicon-MEMS beam-wave interaction circuits at 0.1 THz

Chan-Wook Baik;Ho Young Ahn;Yongsung Kim;Jooho Lee;Seogwoo Hong;Junhee Choi;Sunil Kim;Byoung Lyong Choi;George A. Collins;Lawrence Ives;Sungwoo Hwang

2012 37th International Conference on Infrared, Millimeter, and Terahertz Waves

Year: 2012 | Conference Paper |

Synthesized Aluminum Nanowires for Future Interconnects [Nanopackaging]

Sungwoo Hwang;Chan-Wook Baik;Dongmok Whang

IEEE Nanotechnology Magazine

Year: 2012 | Volume: 6, Issue: 3 | Magazine Article |

Cited by: Patents (1)

HTML

The current status of synthesized semiconductor and metallic nanowires is still far from practical applications. However, in many cases, they serve as good technological precursors because their size and various physical properties are beyond what are obtainable from their lithographically patterned counterparts. Recently, aluminum nanowires (AlNWs) without grain boundaries and surface roughness w...Show More

Synthesized Aluminum Nanowires for Future Interconnects [Nanopackaging]

Sungwoo Hwang;Chan-Wook Baik;Dongmok Whang

IEEE Nanotechnology Magazine

Year: 2012 | Volume: 6, Issue: 3 | Magazine Article |

Measurement of femto-farad gate capacitance of a silicon nanowire FET using time-domain pulse response

D. W. Kim;H. T. Kim;D. H. Hwang;M. G. Kang;J. H. Lee;D. Whang;S. W. Hwang

2011 IEEE Nanotechnology Materials and Devices Conference

Year: 2011 | Conference Paper |

Cited by: Papers (3)

HTML

We present the direct measurement of the gate capacitance of a silicon nanowire field effect transistor using time-domain monitoring of the source current when the gate pulses with various frequencies and amplitudes are applied. The displacement current induced at the gate capacitance is proportional to the derivative of the gate pulse, and it becomes measurable when the rise time of the gate puls...Show More

Measurement of femto-farad gate capacitance of a silicon nanowire FET using time-domain pulse response

D. W. Kim;H. T. Kim;D. H. Hwang;M. G. Kang;J. H. Lee;D. Whang;S. W. Hwang

2011 IEEE Nanotechnology Materials and Devices Conference

Year: 2011 | Conference Paper |

Novel balanced RF duplexer using bulk acoustic wave resonator with low TCF structure

Jea-Shik Shin;Duck-Hwan Kim;Chul-Soo Kim;Sang Uk Son;Jae-Chun Lee;Hyung-Rak Kim;Jing Cui;Ho-Soo Park;Insang Song;Sung-Woo Hwang

2011 41st European Microwave Conference

Year: 2011 | Conference Paper |

Cited by: Papers (2)

HTML

A novel RF duplexer with balanced receiving output ports and low temperature coefficient of frequency (TCF) is proposed. The topology of balanced receiving RF filter is designed with both lattice and ladder type. RF resonators in this filter are designed based on a bulk acoustic wave (BAW) structure in which each layer has alternative negative and positive TCF values. The RF circuit block performi...Show More

Novel balanced RF duplexer using bulk acoustic wave resonator with low TCF structure

Jea-Shik Shin;Duck-Hwan Kim;Chul-Soo Kim;Sang Uk Son;Jae-Chun Lee;Hyung-Rak Kim;Jing Cui;Ho-Soo Park;Insang Song;Sung-Woo Hwang

2011 41st European Microwave Conference

Year: 2011 | Conference Paper |

Subthreshold Degradation of Gate-all-Around Silicon Nanowire Field-Effect Transistors: Effect of Interface Trap Charge

B. H. Hong;N. Cho;S. J. Lee;Y. S. Yu;L. Choi;Y. C. Jung;K. H. Cho;K. H. Yeo;D.-W. Kim;G. Y. Jin;K. S. Oh;D. Park;S.-H. Song;J.-S. Rieh;S. W. Hwang

IEEE Electron Device Letters

Year: 2011 | Volume: 32, Issue: 9 | Journal Article |

Cited by: Papers (20)

HTML

We measured and analyzed the subthreshold degradation of the gate-all-around (GAA) silicon nanowire field-effect transistors with the length of 300/500 nm and the radius of 5 nm. An analytical model incorporating the effect of interface traps quantitatively explained the measured subthreshold swing (SS) degradation. A simple electrostatic argument showed that the GAA device had smaller degradation...Show More

Subthreshold Degradation of Gate-all-Around Silicon Nanowire Field-Effect Transistors: Effect of Interface Trap Charge

B. H. Hong;N. Cho;S. J. Lee;Y. S. Yu;L. Choi;Y. C. Jung;K. H. Cho;K. H. Yeo;D.-W. Kim;G. Y. Jin;K. S. Oh;D. Park;S.-H. Song;J.-S. Rieh;S. W. Hwang

IEEE Electron Device Letters

Year: 2011 | Volume: 32, Issue: 9 | Journal Article |

Implicit Continuous Current–Voltage Model for Surrounding-Gate Metal–Oxide–Semiconductor Field-Effect Transistors Including Interface Traps

Yun Seop Yu;Namki Cho;Sung Woo Hwang;Doyeol Ahn

IEEE Transactions on Electron Devices

Year: 2011 | Volume: 58, Issue: 8 | Journal Article |

Cited by: Papers (13)

HTML

An analytic and continuous direct-current model for cylindrical doped surrounding-gate metal-oxide-semiconductor field-effect transistors (SGMOSFETs) including interface-trap charges is presented. Based on the SGMOSFET model, which is valid from undoped to heavily doped channels, a general model for long-channel SGMOSFETs including interface-trap charges is derived. A comparison between the numeri...Show More

Implicit Continuous Current–Voltage Model for Surrounding-Gate Metal–Oxide–Semiconductor Field-Effect Transistors Including Interface Traps

Yun Seop Yu;Namki Cho;Sung Woo Hwang;Doyeol Ahn

IEEE Transactions on Electron Devices

Year: 2011 | Volume: 58, Issue: 8 | Journal Article |

Investigation of the Cause of a Malfunction in a Display Package and Its Solution

Jae Choon Kim;Dong Jin Lee;Sung Woo Hwang;Byeong-Kwon Ju;Sang Kyeong Yun;Heung-Woo Park;Jin Taek Chung

IEEE Transactions on Components, Packaging and Manufacturing Technology

Year: 2011 | Volume: 1, Issue: 1 | Journal Article |

HTML

A piezo-actuated display package (PADP) with deformable mirror arrays is proposed for handheld applications of a micro-beam projection display. Temperature change is a critical factor affecting the performance of a PADP. To analyze temperature-related malfunctions, electrical, mechanical, and thermal analyses of the package are conducted simultaneously. A temperature control system using a micro-h...Show More

Investigation of the Cause of a Malfunction in a Display Package and Its Solution

Jae Choon Kim;Dong Jin Lee;Sung Woo Hwang;Byeong-Kwon Ju;Sang Kyeong Yun;Heung-Woo Park;Jin Taek Chung

IEEE Transactions on Components, Packaging and Manufacturing Technology

Year: 2011 | Volume: 1, Issue: 1 | Journal Article |

Fabrication of graphene field-effect transistors by simple stripping from CVD-grown layers

Jongseung Hwang;Jae-Hyun Lee;Jong-Cheol Lee;Dongmok Whang;Sung Woo Hwang

10th IEEE International Conference on Nanotechnology

Year: 2010 | Conference Paper |

HTML

We develop a simple technique to fabricate graphene field-effect-transistor (FET) devices. Our technique is stripping graphene by scotch tape from the chemical vapor deposition (CVD)-grown layer, except the gap region between the source and drain electrode. The current-voltage (I-V) characteristic of a graphene FET before stripping shows a large zero-bias conductance of 6.5 mS and no gate operatio...Show More

Fabrication of graphene field-effect transistors by simple stripping from CVD-grown layers

Jongseung Hwang;Jae-Hyun Lee;Jong-Cheol Lee;Dongmok Whang;Sung Woo Hwang

10th IEEE International Conference on Nanotechnology

Year: 2010 | Conference Paper |

1-chip balanced FBAR filter for wireless handsets

Jea-shik Shin;Yun-kwon Park;Young-Il Kim;Chul-Soo Kim;Jae-Chun Lee;Duck-Hwan Kim;Hyung-rak Kim;Sung-woo Hwang;In-sang Song

The 40th European Microwave Conference

Year: 2010 | Conference Paper |

Cited by: Papers (5)

HTML

There is great demand for ultra-miniature and balanced RF filters as an essential component in communication systems. To make these needs, we proposed 1-chip balanced FBAR RF filter in this work. A novel FBAR configuration is developed to reduce the area of FBAR block and to enhance performance. And a novel balanced filter topology which can work without trimming inductors is proposed to realize 1...Show More

1-chip balanced FBAR filter for wireless handsets

Jea-shik Shin;Yun-kwon Park;Young-Il Kim;Chul-Soo Kim;Jae-Chun Lee;Duck-Hwan Kim;Hyung-rak Kim;Sung-woo Hwang;In-sang Song

The 40th European Microwave Conference

Year: 2010 | Conference Paper |

IEEE Personal Account

Change username/password

Purchase Details

Payment Options
View Purchased Documents

Profile Information

Communications Preferences
Profession and Education
Technical interests

Need Help?

US & Canada: +1 800 678 4333
Worldwide: +1 732 981 0060
Contact & Support

Follow

About IEEE Xplore | Contact Us | Help | Accessibility | Terms of Use | Nondiscrimination Policy | IEEE Ethics Reporting | Sitemap | IEEE Privacy Policy

A public charity, IEEE is the world's largest technical professional organization dedicated to advancing technology for the benefit of humanity.

© Copyright 2025 IEEE - All rights reserved, including rights for text and data mining and training of artificial intelligence and similar technologies.

IEEE Account

Change Username/Password
Update Address

Purchase Details

Payment Options
Order History
View Purchased Documents

Profile Information

Communications Preferences
Profession and Education
Technical Interests

Need Help?

US & Canada: +1 800 678 4333
Worldwide: +1 732 981 0060
Contact & Support

About IEEE Xplore
Contact Us
Help
Accessibility
Terms of Use
Nondiscrimination Policy
Sitemap
Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest technical professional organization dedicated to advancing technology for the benefit of humanity.
© Copyright 2025 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.

Test Whats new message.